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IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1
Mfr. #:
IPW65R110CFDAFKSA1
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW65R110CFDAFKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPW65R110CFDAFKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IPW65R110
Confezione
Tubo
Alias ​​parziali
IPW65R110CFDA IPW65R110CFDAXK SP000895236
Unità di peso
1.340411 oz
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Id-Continuo-Scarico-Corrente
31.2 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Rds-On-Drain-Source-Resistenza
110 mOhms
Polarità del transistor
Canale N
Tags
IPW65R110CFDA, IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:no Svhc (12-Jan-2017) Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 650V 31.2A
***i-Key
MOSFET N-CH 650V 31.2A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		219In Stock
  • 720:$5.6983
  • 240:$6.6906
  • 10:$8.0130
  • 1:$8.8400
IPW65R110CFDAFKSA1
DISTI # SP000895236		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: SP000895236)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 48
  • 1:€4.4900
  • 10:€4.0900
  • 25:€3.9900
  • 50:€3.7900
  • 100:€3.6900
  • 500:€3.4900
  • 1000:€3.2900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R110CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$4.2900
  • 480:$4.0900
  • 960:$3.9900
  • 1440:$3.7900
  • 2400:$3.7900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDA		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: IPW65R110CFDA)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
    IPW65R110CFDAFKSA1
    DISTI # 13AC9100    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes15
    • 100:$5.3600
    • 50:$5.7700
    • 25:$6.1700
    • 10:$6.4700
    • 1:$7.1600
    IPW65R110CFDAFKSA1
    DISTI # 726-IPW65R110CFDAFKS    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant    		348
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDA
    DISTI # 726-IPW65R110CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant    		263
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDAFKSA1
    DISTI # 2726081    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant    		15
    • 720:$8.1800
    • 240:$9.7600
    • 10:$11.8700
    • 1:$13.1800
    IPW65R110CFDAFKSA1
    DISTI # XSKDRABV0042852    		Infineon Technologies AG 
    RoHS: Compliant    		192
    • 192:$5.3600
    • 87:$5.7400
    IPW65R110CFDAFKSA1
    DISTI # 2726081    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant    		15
    • 100:£4.1000
    • 50:£4.4100
    • 10:£4.7100
    • 5:£5.4700
    • 1:£6.0000
    Immagine Parte # Descrizione
    IPW65R110CFD

    Mfr.#: IPW65R110CFD

    OMO.#: OMO-IPW65R110CFD

    		 MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    IPW65R110CFDFKSA1

    Mfr.#: IPW65R110CFDFKSA1

    OMO.#: OMO-IPW65R110CFDFKSA1

    		 MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    IPW65R110CFDAFKSA1

    Mfr.#: IPW65R110CFDAFKSA1

    OMO.#: OMO-IPW65R110CFDAFKSA1

    		 MOSFET N-Ch 650V 31.2A TO247-3
    IPW65R110CFDFKSA2

    Mfr.#: IPW65R110CFDFKSA2

    OMO.#: OMO-IPW65R110CFDFKSA2

    		 MOSFET
    IPW65R110CFDFKSA2

    Mfr.#: IPW65R110CFDFKSA2

    OMO.#: OMO-IPW65R110CFDFKSA2-INFINEON-TECHNOLOGIES

    		 HIGH POWER_LEGACY
    IPW65R110CFD , 2SJ288

    Mfr.#: IPW65R110CFD , 2SJ288

    OMO.#: OMO-IPW65R110CFD-2SJ288-1190

    		 Nuovo e originale
    IPW65R110CFD 65F6110

    Mfr.#: IPW65R110CFD 65F6110

    OMO.#: OMO-IPW65R110CFD-65F6110-1190

    		 Nuovo e originale
    IPW65R110CFDA , 2SJ289

    Mfr.#: IPW65R110CFDA , 2SJ289

    OMO.#: OMO-IPW65R110CFDA-2SJ289-1190

    		 Nuovo e originale
    IPW65R110CFDFKSA1

    Mfr.#: IPW65R110CFDFKSA1

    OMO.#: OMO-IPW65R110CFDFKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 31.2A TO247
    IPW65R110CFDAFKSA1

    Mfr.#: IPW65R110CFDAFKSA1

    OMO.#: OMO-IPW65R110CFDAFKSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di IPW65R110CFDAFKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    5,68 USD
    5,68 USD
    10
    5,40 USD
    54,01 USD
    100
    5,12 USD
    511,65 USD
    500
    4,83 USD
    2 416,15 USD
    1000
    4,55 USD
    4 548,00 USD
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