SI1016X-T1-GE3

Mfr. #:: SI1016X-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET N/P-CH 20V SC89-6
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI1016X-T1-GE3 Scheda dati
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Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Array

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI1016X-GE3

Unità di peso: 0.001129 oz

Stile di montaggio: SMD/SMT

Nome depositato: TrenchFET

Pacchetto-Custodia: SOT-563, SOT-666

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: SC-89-6

Configurazione: Canale N Canale P

Tipo FET: Canale N e P

Potenza-Max: 250mW

Tipo a transistor: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 485mA, 370mA

Rds-On-Max-Id-Vgs: 700 mOhm @ 600mA, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: 0.75nC @ 4.5V

Pd-Power-Dissipazione: 250 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 6 V

Id-Continuo-Scarico-Corrente: 600 mA

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistenza: 410 mOhms 800 mOhms

Polarità del transistor: Canale N Canale P

Modalità canale: Aumento

Tags: SI1016X-T, SI1016X, SI1016, SI101, SI10, SI1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1016X-T1-GE3 Descrizione

***ure Electronics: N/P Channel 20 V 0.41/0.7 Ohm 250 mW SMT Power Mosfet - SC-89-6

*** Source Electronics: MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, SC-89; Tra; DUAL N/P CHANNEL MOSFET, 20V, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:485mA; Continuous Drain Current Id, P Channel:-370mA; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, N & P CH, 20V, 0.485A, SOT-563; Transistor Polarity:N and P Channel; Continuous Drain Current Id:485mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:380mW; Transistor Case Style:SOT-563; No. of Pins:6Pins; Operating Temperature Max:150°C; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V SC89-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	38255In Stock	1000:$0.1926 500:$0.2493 100:$0.3399 10:$0.4530 1:$0.5400
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V SC89-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	38255In Stock	1000:$0.1926 500:$0.2493 100:$0.3399 10:$0.4530 1:$0.5400
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V SC89-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	3000:$0.1705
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Cut TR (SOS) (Alt: SI1016X-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 2999	1:$0.4649 30:$0.4389 75:$0.3659 150:$0.3289 375:$0.2709 750:$0.2049 1500:$0.1859
SI1016X-T1-GE3 DISTI # SI1016X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: SI1016X-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1449 6000:$0.1409 12000:$0.1349 18000:$0.1309 30000:$0.1279
SI1016X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI1016X-T1-GE3 DISTI # 73W9405	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SOT-563 T/R - Tape and Reel (Alt: 73W9405) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	1:$0.1500 6000:$0.1450 12000:$0.1360 18000:$0.1330 30000:$0.1290
SI1016X-T1-GE3 DISTI # 73W9405	Vishay Intertechnologies	MOSFET, N AND P CHANNEL, 20V, 0.41OHM, 485mA, SOT-563, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes	9000	1:$0.1550 3000:$0.1500 6000:$0.1450 12000:$0.1360 18000:$0.1330 30000:$0.1290
SI1016X-T1-GE3 DISTI # 16P3672	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 20V, SC-89,Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.4800 25:$0.3620 50:$0.3160 100:$0.2690 250:$0.2450 500:$0.2210 1000:$0.1710
SI1016X-T1-GE3. DISTI # 16AC0247	Vishay Intertechnologies	Transistor Polarity:N and P Channel,Continuous Drain Current Id:485mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:1V,Power Dissipation Pd:250mW,No. of Pins:6PinsRoHS Compliant: No	0	1:$0.1580 3000:$0.1530 6000:$0.1450 12000:$0.1360 18000:$0.1330 30000:$0.1290
SI1016X-T1-GE3 DISTI # 70459639	Vishay Siliconix	N/P-Ch MOSFET 700/1200 [email protected] RoHS: Compliant	0	3000:$0.5370 6000:$0.3660
SI1016X-T1-GE3 DISTI # 781-SI1016X-T1-GE3	Vishay Intertechnologies	MOSFET N/P-Ch MOSFET 700/1200 [email protected] RoHS: Compliant	24855	1:$0.4800 10:$0.3620 100:$0.2690 500:$0.2210 1000:$0.1710 3000:$0.1550 6000:$0.1450 9000:$0.1360 24000:$0.1290
SI1016X-T1-GE3	Vishay Siliconix	485MA, 20V, 2 CHANNEL,N AND P-CHANNEL, SI, SMALL SIGNAL, MOSFET	80	38:$0.2025 15:$0.2700 1:$0.3600
SI1016X-T1-GE3 DISTI # XSFP00000119259	Vishay Siliconix	Zener Diode, 8.2V V(Z), 5%, 0.5W,Silicon,Unidirectional RoHS: Compliant	18000	3000:$0.4000 18000:$0.3636
SI1016X-T1-GE3	Vishay Intertechnologies	MOSFET N/P-Ch MOSFET 700/1200 [email protected] RoHS: Compliant	Americas - 6000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI1016X-T1-GE3 OMO.#: OMO-SI1016X-T1-GE3	MOSFET N/P-Ch MOSFET 700/1200 [email protected]
	Mfr.#: SI1016X-T1-E3 OMO.#: OMO-SI1016X-T1-E3	MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3
	Mfr.#: SI1016X OMO.#: OMO-SI1016X-1190	Nuovo e originale
	Mfr.#: SI1016X-T1 OMO.#: OMO-SI1016X-T1-1190	MOSFET RECOMMENDED ALT 781-SI1016X-T1-GE3
	Mfr.#: SI1016X-T1-E3 OMO.#: OMO-SI1016X-T1-E3-VISHAY	MOSFET N/P-CH 20V SOT563F
	Mfr.#: SI1016X-T1-GE3 OMO.#: OMO-SI1016X-T1-GE3-VISHAY	MOSFET N/P-CH 20V SC89-6

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Su ordine:: 5000
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,19 USD~~; ~~0,19 USD~~

10: ~~0,18 USD~~; ~~1,82 USD~~

100: ~~0,17 USD~~; ~~17,27 USD~~

500: ~~0,16 USD~~; ~~81,55 USD~~

1000: ~~0,15 USD~~; ~~153,50 USD~~

Iniziare con

SI1016X-T 3
SI1016X 4
SI1016 8
SI101 86
SI10 423
SI1 1080

SI1016X-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes