BSC026N02KS G

BSC026N02KS G
Mfr. #:
BSC026N02KS G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC026N02KS G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
BSC026N02KS G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TDSON-8
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
78W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
7800pF @ 10V
Funzione FET
Logic Level Gate, 2.5V Drive
Corrente-Continuo-Scarico-Id-25°C
25A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
2.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 200μA
Gate-Carica-Qg-Vgs
52.7nC @ 4.5V
Pd-Power-Dissipazione
2.8 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
9 ns
Ora di alzarsi
115 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
25 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Resistenza
2.6 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
52 ns
Tempo di ritardo all'accensione tipico
21 ns
Modalità canale
Aumento
Tags
BSC026N02KSG, BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSC026N02KSGAUMA1
DISTI # V72:2272_06384322
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
  • 1:$1.2554
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6901
BSC026N02KSGAUMA1
DISTI # 30701482
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 10000:$0.5798
  • 5000:$0.6029
BSC026N02KSGAUMA1
DISTI # 26195427
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 11:$1.1161
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6789
  • 10000:$0.6549
  • 20000:$0.6309
  • 30000:$0.6099
  • 50000:$0.5989
BSC026N02KSGAUMA1
DISTI # SP000379664
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R (Alt: SP000379664)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.9889
  • 10000:€0.7709
  • 20000:€0.6889
  • 30000:€0.6269
  • 50000:€0.5879
BSC026N02KS G
DISTI # 726-BSC026N02KSG
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
7674
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.8920
  • 500:$0.7880
  • 1000:$0.6220
BSC026N02KSGAUMA1
DISTI # 726-BSC026N02KSGAUMA
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
2883
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7080
  • 5000:$0.6280
BSC026N02KSGInfineon Technologies AGPower Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
40500
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
BSC026N02KSGAUMA1
DISTI # 7528154P
Infineon Technologies AGMOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL3490
  • 50:£0.8500
  • 250:£0.6650
  • 1250:£0.4650
  • 2500:£0.4400
BSC026N02KSGAUMA1
DISTI # C1S322000644539
Infineon Technologies AGMOSFETs
RoHS: Compliant
5000
  • 5000:$0.6400
BSC026N02KSGAUMA1
DISTI # C1S322000653078
Infineon Technologies AGMOSFETs
RoHS: Compliant
4849
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
BSC026N02KSGAUMA1
DISTI # 1775434
Infineon Technologies AGMOSFET, N CH, 100A, 20V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$2.1700
  • 10:$1.8500
  • 100:$1.4100
  • 500:$1.2500
  • 1000:$0.9840
  • 5000:$0.9840
Immagine Parte # Descrizione
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS

MOSFET DIFFERENTIATED MOSFETS
BSC026N02KS G

Mfr.#: BSC026N02KS G

OMO.#: OMO-BSC026N02KS-G-1190

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N02KSG

Mfr.#: BSC026N02KSG

OMO.#: OMO-BSC026N02KSG-1190

Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC026N02KSGAUMA1

Mfr.#: BSC026N02KSGAUMA1

OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 100A TDSON-8
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS-1190

Trans MOSFET N-CH 40V 23A
BSC026N04LSATMA1

Mfr.#: BSC026N04LSATMA1

OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 23A 8TDSON
BSC026N08NS5

Mfr.#: BSC026N08NS5

OMO.#: OMO-BSC026N08NS5-1190

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC026NE2LS5ATMA1-CUT TAPE

Mfr.#: BSC026NE2LS5ATMA1-CUT TAPE

OMO.#: OMO-BSC026NE2LS5ATMA1-CUT-TAPE-1190

Nuovo e originale
BSC026NE2LS5ATMA1

Mfr.#: BSC026NE2LS5ATMA1

OMO.#: OMO-BSC026NE2LS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET LV POWER MOS
BSC026N08NS5ATMA1

Mfr.#: BSC026N08NS5ATMA1

OMO.#: OMO-BSC026N08NS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 80V 100A TDSON-8
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di BSC026N02KS G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,93 USD
0,93 USD
10
0,89 USD
8,86 USD
100
0,84 USD
83,97 USD
500
0,79 USD
396,55 USD
1000
0,75 USD
746,40 USD
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