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IPI147N12N3GAKSA1

IPI147N12N3GAKSA1
Mfr. #:
IPI147N12N3GAKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 120V 56A TO262-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPI147N12N3GAKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IPI147, IPI14, IPI1, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK Infineon IPI147N12N3GAKSA1
***ical
Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
***et Europe
Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262
***et
Trans MOSFET N-CH 120V 56A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 120V 56A TO262-3
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Parte # Mfg. Descrizione Azione Prezzo
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1-ND		Infineon Technologies AGMOSFET N-CH 120V 56A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.0285
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1		Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI147N12N3GAKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7689
  • 2000:$0.7419
  • 3000:$0.7149
  • 5000:$0.6909
  • 10000:$0.6779
IPI147N12N3GAKSA1
DISTI # SP000652744		Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 (Alt: SP000652744)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.1469
  • 10:€0.8949
  • 25:€0.7989
  • 50:€0.7269
  • 100:€0.7059
  • 500:€0.6909
  • 1000:€0.6819
IPI147N12N3GAKSA1Infineon Technologies AGPower Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		14000
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
IPI147N12N3 G
DISTI # 726-IPI147N12N3G		Infineon Technologies AGMOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
RoHS: Compliant		1000
  • 1:$1.6100
  • 10:$1.3800
  • 100:$1.0600
  • 500:$0.9320
  • 1000:$0.7360
IPI147N12N3GAKSA1Infineon Technologies AG 490
    Immagine Parte # Descrizione
    IPI147N12N3 G

    Mfr.#: IPI147N12N3 G

    OMO.#: OMO-IPI147N12N3-G

    		 MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
    IPI147N12N3GAKSA1

    Mfr.#: IPI147N12N3GAKSA1

    OMO.#: OMO-IPI147N12N3GAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 120V 56A TO262-3
    IPI147N12N3G

    Mfr.#: IPI147N12N3G

    OMO.#: OMO-IPI147N12N3G-1190

    		 Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI147N12N3 G

    Mfr.#: IPI147N12N3 G

    OMO.#: OMO-IPI147N12N3-G-124

    		 Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di IPI147N12N3GAKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,94 USD
    0,94 USD
    10
    0,90 USD
    8,98 USD
    100
    0,85 USD
    85,05 USD
    500
    0,80 USD
    401,65 USD
    1000
    0,76 USD
    756,00 USD
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