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AUIRF7665S2TR

AUIRF7665S2TR
Mfr. #:
AUIRF7665S2TR
Produttore:
Infineon Technologies
Descrizione:
MOSFET 100V AUTO GRADE 1 N-CH HEXFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AUIRF7665S2TR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRF7665S2TR DatasheetAUIRF7665S2TR Datasheet (P4-P6)AUIRF7665S2TR Datasheet (P7-P9)AUIRF7665S2TR Datasheet (P10-P11)
ECAD Model:
Maggiori informazioni:
AUIRF7665S2TR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DirectFET-SB
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
14.4 A
Rds On - Resistenza Drain-Source:
62 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
8.3 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
30 W
Configurazione:
Separare
Modalità canale:
Aumento
Qualificazione:
AEC-Q101
Confezione:
Bobina
Altezza:
0.74 mm
Lunghezza:
4.85 mm
Tipo di transistor:
1 N-Channel
Larghezza:
3.95 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
8.8 S
Tempo di caduta:
3.6 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
6.4 ns
Quantità confezione di fabbrica:
4800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
7.1 ns
Tempo di ritardo di accensione tipico:
3.8 ns
Parte # Alias:
SP001519440
Tags
AUIRF766, AUIRF76, AUIRF7, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
***ineon SCT
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperesr., MG-WDSON-4, RoHS
***ark
N Channel, MOSFET, 100V, 14.4A, DirectFET SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***ernational Rectifier
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes with optimized gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors su
***ineon
Benefits: Advanced process technology; Exceptionally small footprint and low profile; High power density; Low parasitic parameters; Dual-sided cooling; 175C operating temperature; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant and halogen free; Automotive qualified
***emi
N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ
***ure Electronics
Single N-Channel 100 V 98 mOhm 7.3 nC 2.3 W PowerTrench SMT Mosfet - MLP-3.3x3.3
***r Electronics
Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0437ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
***ical
Trans MOSFET N-CH Si 100V 14.4A 6-Pin Direct-FET SB T/R
***ineon SCT
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes., MG-WDSON-4, RoHS
***ment14 APAC
MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ernational Rectifier
A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied
***ineon
Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ure Electronics
Single N-Channel 100V 0.115 Ohm 44 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***eco
IRFR3910TRPBF,MOSFET, 100V, 15 A, 115 MOHM, 29.3 NC QG, D-PA
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:79W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR3910TRPBF.
***roFlash
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
***emi
N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK
***ure Electronics
N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***icroelectronics
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
***ark
N CHANNEL MOSFET, 100V, 13A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Parte # Mfg. Descrizione Azione Prezzo
AUIRF7665S2TR
DISTI # V72:2272_13892226		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
RoHS: Compliant		4800
  • 3000:$0.4373
  • 1000:$0.4681
  • 500:$0.5980
  • 250:$0.6827
  • 100:$0.6898
  • 25:$0.8769
  • 10:$1.0049
  • 1:$1.1854
AUIRF7665S2TR
DISTI # V36:1790_13892226		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
RoHS: Compliant		0
  • 4800000:$0.3872
  • 2400000:$0.3875
  • 480000:$0.4125
  • 48000:$0.4568
  • 4800:$0.4642
AUIRF7665S2TR
DISTI # AUIRF7665S2TR-ND		Infineon Technologies AGMOSFET N-CH 100V 77A DIRECTFET2
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4800:$0.4642
AUIRF7665S2TR
DISTI # 30182021		Infineon Technologies AGTrans MOSFET N-CH Si 100V 4.1A Automotive 6-Pin Direct-FET SB T/R
RoHS: Compliant		4800
  • 3000:$0.4373
  • 1000:$0.4681
  • 500:$0.5980
  • 250:$0.6827
  • 100:$0.6898
  • 25:$0.8769
  • 16:$1.0049
AUIRF7665S2TR
DISTI # AUIRF7665S2TR		Infineon Technologies AGTrans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R - Tape and Reel (Alt: AUIRF7665S2TR)
RoHS: Compliant
Min Qty: 4800
Container: Reel		Americas - 0
  • 48000:$0.4219
  • 28800:$0.4299
  • 19200:$0.4439
  • 9600:$0.4609
  • 4800:$0.4779
AUIRF7665S2TR
DISTI # AUIRF7665S2TR		Infineon Technologies AGTrans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R - Bulk (Alt: AUIRF7665S2TR)
Min Qty: 807
Container: Bulk		Americas - 0
  • 8070:$0.4189
  • 4035:$0.4279
  • 2421:$0.4439
  • 1614:$0.4619
  • 807:$0.4809
AUIRF7665S2TR
DISTI # SP001519440		Infineon Technologies AGTrans MOSFET N-CH 100V 4.1A 6-Pin Direct-FET SB T/R (Alt: SP001519440)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel		Europe - 0
  • 48000:€0.3979
  • 28800:€0.4289
  • 19200:€0.4649
  • 9600:€0.5069
  • 4800:€0.6199
AUIRF7665S2TR
DISTI # 91Y4160		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, DIRECTFETSB,Transistor Polarity:N Channel,Continuous Drain Current Id:14.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.051ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,PowerRoHS Compliant: Yes3093
  • 1000:$0.5040
  • 500:$0.6380
  • 250:$0.6800
  • 100:$0.7220
  • 50:$0.7950
  • 25:$0.8680
  • 10:$0.9400
  • 1:$1.1000
AUIRF7665S2TR
DISTI # 70019355		Infineon Technologies AGGEN 10.7,AUTOMOTIVE DIRECTFET2,66.0MOHM,X0.95,100V
RoHS: Compliant		0
  • 4800:$1.1600
  • 9600:$1.1370
  • 24000:$1.1020
  • 48000:$1.0560
  • 120000:$0.9860
AUIRF7665S2TR1
DISTI # 70019356		Infineon Technologies AGGEN 10.7,AUTOMOTIVE DIRECTFET2,66.0MOHM,X0.95,100V
RoHS: Compliant		0
  • 1000:$0.6280
  • 2000:$0.6150
  • 5000:$0.5960
  • 10000:$0.5710
  • 25000:$0.5340
AUIRF7665S2TR
DISTI # 942-AUIRF7665S2TR		Infineon Technologies AGMOSFET 100V AUTO GRADE 1 N-CH HEXFET
RoHS: Compliant		4441
  • 1:$1.0900
  • 10:$0.9310
  • 100:$0.7150
  • 500:$0.6320
  • 1000:$0.4990
  • 2500:$0.4430
  • 4800:$0.4430
  • 9600:$0.4260
AUIRF7665S2TR1
DISTI # 942-AUIRF7665S2TR1		Infineon Technologies AGMOSFET 100V AUTO GRADE 1 N-CH HEXFET
RoHS: Compliant		0
    AUIRF7665S2TRInternational RectifierPower Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant    		4800
    • 1000:$0.4300
    • 500:$0.4600
    • 100:$0.4800
    • 25:$0.5000
    • 1:$0.5300
    AUIRF7665S2TR
    DISTI # 2579956    		Infineon Technologies AGMOSFET, AUTO, N-CH, 100V, DIRECTFETSB3093
    • 500:£0.5730
    • 250:£0.6100
    • 100:£0.6470
    • 25:£0.8440
    • 5:£0.9410
    AUIRF7665S2TR
    DISTI # 2579956    		Infineon Technologies AGMOSFET, AUTO, N-CH, 100V, DIRECTFETSB
    RoHS: Compliant    		3093
    • 1000:$0.7280
    • 500:$0.7700
    • 250:$0.8900
    • 100:$1.0600
    • 10:$1.2900
    • 1:$1.4900
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    		 TVS Diodes / ESD Suppressors 26.2VZMIN 2LINE SC70
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    Mfr.#: BAV199LT1G

    OMO.#: OMO-BAV199LT1G

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    GS61004B-E01-MR

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    OMO.#: OMO-GS61004B-E01-MR

    		 MOSFET 100V 45A E-Mode GaN
    STPS0540ZY

    Mfr.#: STPS0540ZY

    OMO.#: OMO-STPS0540ZY

    		 Schottky Diodes & Rectifiers 40V Automotive REC 0.5A 0.50V VF
    EPM240T100I5N

    Mfr.#: EPM240T100I5N

    OMO.#: OMO-EPM240T100I5N

    		 CPLD - Complex Programmable Logic Devices CPLD - MAX II 192 Macro 80 IOs
    LP2985-33DBVR

    Mfr.#: LP2985-33DBVR

    OMO.#: OMO-LP2985-33DBVR

    		 LDO Voltage Regulators 150-mA Low-Noise 1.5% tolerance
    KLZ1608MHR100WTD25

    Mfr.#: KLZ1608MHR100WTD25

    OMO.#: OMO-KLZ1608MHR100WTD25

    		 Fixed Inductors 10uH 2MHz 20% 1608 AEC-Q200
    LP2985-33DBVR

    Mfr.#: LP2985-33DBVR

    OMO.#: OMO-LP2985-33DBVR-TEXAS-INSTRUMENTS

    		 LDO Voltage Regulators 150-mA Low-Noise 1.5% tolerance
    KLZ1608MHR100WTD25

    Mfr.#: KLZ1608MHR100WTD25

    OMO.#: OMO-KLZ1608MHR100WTD25-TDK

    		 FIXED IND 10UH 250MA 1.365 OHM
    Disponibilità
    Azione:
    Available
    Su ordine:
    1987
    Inserisci la quantità:
    Il prezzo attuale di AUIRF7665S2TR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,09 USD
    1,09 USD
    10
    0,93 USD
    9,31 USD
    100
    0,72 USD
    71,50 USD
    500
    0,63 USD
    316,00 USD
    1000
    0,50 USD
    499,00 USD
    2500
    0,44 USD
    1 107,50 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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