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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BG3130H6327XTSA1 DISTI # BG3130H6327XTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH DUAL 8V 25MA SOT363 Min Qty: 9000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BG3130H6327XTSA1 DISTI # BG3130H6327XTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 8V 0.025A 6-Pin SOT-363 T/R - Bulk (Alt: BG3130H6327XTSA1) Min Qty: 3572 Container: Bulk | Americas - 0 |
|
| BG 3130 H6327 DISTI # 726-BG3130H6327 | Infineon Technologies AG | RF MOSFET Transistors RF MOSFETS RoHS: Compliant | 2800 |
|
| BG3130H6327XTSA1 | Infineon Technologies AG | Dual N-Channel MOSFET TETRODE RoHS: Not Compliant | 6000 |
|
| BG3130H6327XTSA1 DISTI # 8578472 | Infineon Technologies AG | On a Reel of 3000, BG3130H6327XTSA1 N-Channel MOSFET Tetrode, 25 mA, 8 V, 6-Pin SOT-363 Infineon, RL Min Qty: 3000 Container: Reel | 0 |
|
| BG3130H6327 | Infineon Technologies AG | 8V,0.025A,Dual N-channel power MOSFET | 30 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BG3130 E6327 OMO.#: OMO-BG3130-E6327-1190 |
Nuovo e originale |
|
|
Mfr.#: BG3130,H6327 OMO.#: OMO-BG3130-H6327-1190 |
Nuovo e originale |
|
Mfr.#: BG3130E6327HTSA1 |
MOSFET N-CH DUAL 8V SOT-363 |
|
|
Mfr.#: BG3130H6327 OMO.#: OMO-BG3130H6327-1190 |
8V,0.025A,Dual N-channel power MOSFET |
|
|
Mfr.#: BG3130R |
Nuovo e originale |
|
|
Mfr.#: BG3130R 6327 OMO.#: OMO-BG3130R-6327-1190 |
Nuovo e originale |
|
|
Mfr.#: BG3130R E6327 OMO.#: OMO-BG3130R-E6327-1190 |
Nuovo e originale |
|
|
Mfr.#: BG3130RE6327 |
Nuovo e originale |
|
|
Mfr.#: BG3130RE6327BTSA1 |
MOSFET N-CH DUAL 8V SOT-363 |
|
|
Mfr.#: BG3130RH6327XTSA1 |
MOSFET N-CH DUAL 8V 25MA SOT363 |