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FCP190N60E

FCP190N60E
Mfr. #:
FCP190N60E
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-CHAN MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCP190N60E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FCP190N60E maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
20.6 A
Rds On - Resistenza Drain-Source:
190 mOhms
Qg - Carica cancello:
63 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
208 W
Configurazione:
Separare
Nome depositato:
SuperFET II
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCP190N60E
Tipo di transistor:
1 N-Channel
Tipo:
600 V N-Channel MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
15 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
101 ns
Tempo di ritardo di accensione tipico:
23 ns
Unità di peso:
0.063493 oz
Tags
FCP190N60, FCP190, FCP19, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**i
    E**i
    ES

    Ok, waiting to prove it.

    2019-06-19
    D***v
    D***v
    RU

    Works fine

    2019-06-21
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 ON Semiconductor FCP190N60E
***ure Electronics
Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3
***p One Stop Global
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 20.6A, TO-220
***i-Key
MOSFET N-CH 600V TO-220-3
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
Parte # Mfg. Descrizione Azione Prezzo
FCP190N60E
DISTI # V99:2348_06359354		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 8000000:$1.2610
  • 80000:$1.4240
  • 800:$1.7330
FCP190N60E
DISTI # FCP190N60E-ND		ON SemiconductorMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.7325
FCP190N60E
DISTI # 31262210		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail800
  • 5:$1.7330
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.1900
FCP190N60E
DISTI # FCP190N60E		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP190N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
FCP190N60E
DISTI # 512-FCP190N60E		ON SemiconductorMOSFET 600V N-CHAN MOSFET
RoHS: Compliant		0
  • 1:$2.7800
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
FCP190N60E
DISTI # 7729102P		ON SemiconductorMOSFET N-CH 600V 20A SUPERFET-II TO220, TU10
  • 20:£1.3700
FCP190N60EON Semiconductor600 V N-CHANNEL MOSFET
RoHS: Compliant		Europe - 400
    FCP190N60E
    DISTI # C1S541901518194    		ON SemiconductorTrans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		800
    • 800:$1.7330
    FCP190N60E
    DISTI # 2254234    		ON SemiconductorMOSFET, N-CH, 600V, 20.6A, TO-220
    RoHS: Compliant    		0
    • 1:£2.8400
    • 25:£2.5600
    • 100:£2.4100
    • 250:£2.2800
    • 500:£2.1000
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    Disponibilità
    Azione:
    255
    Su ordine:
    2238
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    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,69 USD
    2,69 USD
    10
    2,28 USD
    22,80 USD
    100
    1,83 USD
    183,00 USD
    500
    1,60 USD
    800,00 USD
    1000
    1,32 USD
    1 320,00 USD
    2500
    1,31 USD
    3 275,00 USD
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