IPI126N10N3GXKSA1

Mfr. #:: IPI126N10N3GXKSA1
Produttore:: Rochester Electronics, LLC
Descrizione:: - Bulk (Alt: IPI126N10N3GXKSA1)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPI126N10N3GXKSA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: IPI126N10N3G, IPI126, IPI12, IPI1, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI126N10N3GXKSA1 Descrizione

***et: Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-262

***i-Key: N-CHANNEL POWER MOSFET

***el Electronic: Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

***ure Electronics: Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262

*** Source Electronics: Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***roFlash: Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94

***ure Electronics: Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-262

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***(Formerly Allied Electronics): MOSFET; 100V; 59A; 18 MOHM; 82 NC QG; TO-262

*** Electronic Components: MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC

***ure Electronics: Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-262-3

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ment14 APAC: MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-262; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPI126N10N3GXKSA1 DISTI # IPI126N10N3GXKSA1	Infineon Technologies AG	- Bulk (Alt: IPI126N10N3GXKSA1) Min Qty: 521 Container: Bulk	Americas - 0	5210:$0.6089 2605:$0.6199 1563:$0.6419 1042:$0.6659 521:$0.6909
IPI126N10N3 G DISTI # 726-IPI126N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3 RoHS: Compliant	22	1:$1.6800 10:$1.3500 100:$1.0800 500:$0.9490 1000:$0.7870 2500:$0.7300 5000:$0.7030 10000:$0.6500
IPI126N10N3GXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant	10500	1000:$0.6300 500:$0.6700 100:$0.6900 25:$0.7200 1:$0.7800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPI126N10N3 OMO.#: OMO-IPI126N10N3-1190	Nuovo e originale
	Mfr.#: IPI126N10N3G OMO.#: OMO-IPI126N10N3G-1190	Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G)
	Mfr.#: IPI126N10N3GXKSA1 OMO.#: OMO-IPI126N10N3GXKSA1-1190	- Bulk (Alt: IPI126N10N3GXKSA1)
	Mfr.#: IPI126N10N3 G OMO.#: OMO-IPI126N10N3-G-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3

Disponibilità

Azione:: Available
Su ordine:: 5500
Inserisci la quantità:

Il prezzo attuale di IPI126N10N3GXKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,91 USD~~; ~~0,91 USD~~

10: ~~0,87 USD~~; ~~8,68 USD~~

100: ~~0,82 USD~~; ~~82,20 USD~~

500: ~~0,78 USD~~; ~~388,15 USD~~

1000: ~~0,73 USD~~; ~~730,70 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

IPI126N10N3G 3
IPI126 4
IPI12 34
IPI1 76
IPI 485

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IPI126N10N3GXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes