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BSB013NE2LXI

BSB013NE2LXI
Mfr. #:
BSB013NE2LXI
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSB013NE2LXI Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSB013NE2LXI maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS
Confezione
Bobina
Alias ​​parziali
BSB013NE2LXIXT BSB013NE2LXIXUMA1 SP000756346
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
WDSON-2
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Singolo Doppio Scarico Doppia Sorgente
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
57 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 40 C
Tempo di caduta
4.8 ns
Ora di alzarsi
6.4 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
163 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.2 V to 2 V
Rds-On-Drain-Source-Resistenza
1.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
32 ns
Tempo di ritardo all'accensione tipico
5.4 ns
Qg-Gate-Carica
62 nC
Transconduttanza diretta-Min
170 S
Modalità canale
Aumento
Tags
BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSB013NE2LXIXUMA1
DISTI # V72:2272_06383470		Infineon Technologies AGTrans MOSFET N-CH 25V 36A 7-Pin WDSON T/R
RoHS: Compliant		9765
  • 6000:$0.7814
  • 3000:$0.7838
  • 1000:$0.8154
  • 500:$0.9176
  • 250:$1.0028
  • 100:$1.0686
  • 25:$1.2224
  • 10:$1.2546
  • 1:$1.4015
BSB013NE2LXIXUMA1
DISTI # BSB013NE2LXIXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 163A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10000In Stock
  • 1000:$0.9857
  • 500:$1.1897
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
BSB013NE2LXIXUMA1
DISTI # BSB013NE2LXIXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 163A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10000In Stock
  • 1000:$0.9857
  • 500:$1.1897
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
BSB013NE2LXIXUMA1
DISTI # BSB013NE2LXIXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 163A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.8580
BSB013NE2LXIXUMA1
DISTI # 26746030		Infineon Technologies AGTrans MOSFET N-CH 25V 36A 7-Pin WDSON T/R
RoHS: Compliant		9765
  • 6000:$0.7814
  • 3000:$0.7838
  • 1000:$0.8154
  • 500:$0.9176
  • 250:$1.0028
  • 100:$1.0686
  • 25:$1.2224
  • 10:$1.2546
BSB013NE2LXIXUMA1
DISTI # 30676222		Infineon Technologies AGTrans MOSFET N-CH 25V 36A 7-Pin WDSON T/R
RoHS: Compliant		5000
  • 5000:$0.9929
BSB013NE2LXI
DISTI # BSB013NE2LXI		Infineon Technologies AGTrans MOSFET N-CH 25V 36A 7-Pin WDSON-2 T/R (Alt: BSB013NE2LXI)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSB013NE2LXIXUMA1
    DISTI # BSB013NE2LXIXUMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V 36A 7-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB013NE2LXIXUMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.6909
    • 10000:$0.6659
    • 20000:$0.6419
    • 30000:$0.6199
    • 50000:$0.6089
    BSB013NE2LXIXUMA1
    DISTI # SP000756346    		Infineon Technologies AGTrans MOSFET N-CH 25V 36A 7-Pin WDSON-2 T/R (Alt: SP000756346)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€0.8609
    • 10000:€0.7039
    • 20000:€0.6459
    • 30000:€0.5959
    • 50000:€0.5529
    BSB013NE2LXIXUMA1
    DISTI # 34AC1372    		Infineon Technologies AGMOSFET, N-CH, 25V, 163A, WDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:163A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation, RoHS Compliant: Yes4595
    • 1:$2.1100
    • 10:$1.9000
    • 25:$1.7800
    • 50:$1.6500
    • 100:$1.5300
    • 250:$1.3600
    • 500:$1.1900
    • 1000:$0.9850
    BSB013NE2LXI
    DISTI # 726-BSB013NE2LXI    		Infineon Technologies AGMOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS
    RoHS: Compliant    		6125
    • 1:$1.7700
    • 10:$1.5000
    • 100:$1.2000
    • 500:$1.0600
    • 1000:$0.8700
    • 2500:$0.8110
    • 5000:$0.7810
    BSB013NE2LXIXUMA1
    DISTI # C1S322000668946    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		9765
    • 250:$1.0083
    • 100:$1.0764
    • 25:$1.2267
    • 10:$1.2572
    BSB013NE2LXIXUMA1
    DISTI # C1S322000680133    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		5000
    • 5000:$0.6570
    BSB013NE2LXIXUMA1
    DISTI # 2781049    		Infineon Technologies AGMOSFET, N-CH, 25V, 163A, WDSON
    RoHS: Compliant    		4595
    • 5:$2.8000
    • 25:$2.4400
    • 100:$1.9900
    • 250:$1.6800
    • 500:$1.4600
    • 1000:$1.3800
    • 5000:$1.3000
    BSB013NE2LXIInfineon Technologies AG25V,163A,N Channel Power MOSFET50
    • 1:$1.2600
    • 100:$1.0500
    • 500:$0.9300
    • 1000:$0.9000
    BSB013NE2LXIXUMA1
    DISTI # 2781049    		Infineon Technologies AGMOSFET, N-CH, 25V, 163A, WDSON
    RoHS: Compliant    		4595
    • 5:£1.5500
    • 25:£1.4400
    • 100:£1.1600
    • 250:£1.0300
    • 500:£0.9010
    Immagine Parte # Descrizione
    BSB013NE2LXI

    Mfr.#: BSB013NE2LXI

    OMO.#: OMO-BSB013NE2LXI

    		 MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS
    BSB013NE2LXIXUMA1

    Mfr.#: BSB013NE2LXIXUMA1

    OMO.#: OMO-BSB013NE2LXIXUMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 25V 163A WDSON-2
    BSB013NE2LXI

    Mfr.#: BSB013NE2LXI

    OMO.#: OMO-BSB013NE2LXI-124

    		 Darlington Transistors MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
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    Prezzo di riferimento (USD)
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    est. Prezzo
    1
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    1,17 USD
    10
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    11,13 USD
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    1,00 USD
    497,90 USD
    1000
    0,94 USD
    937,20 USD
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