SI8802DB-T2-E1

Mfr. #:: SI8802DB-T2-E1
Produttore:: Vishay
Descrizione:: MOSFET N-CH 8V MICROFOOT
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI8802DB-T2-E1 Scheda dati
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Maggiori informazioni:: SI8802DB-T2-E1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 4-XFBGA

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: 4-Microfoot

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 500mW

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 8V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: -

Rds-On-Max-Id-Vgs: 54 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 700mV @ 250μA

Gate-Carica-Qg-Vgs: 6.5nC @ 4.5V

Pd-Power-Dissipazione: 900 mW

Vgs-Gate-Source-Voltage: 5 V

Id-Continuo-Scarico-Corrente: 3.5 A

Vds-Drain-Source-Breakdown-Voltage: 8 V

Rds-On-Drain-Source-Resistenza: 44 mOhms

Polarità del transistor: Canale N

Qg-Gate-Carica: 4.3 nC

Transconduttanza diretta-Min: 13 S

Tags: SI8802DB-T, SI8802, SI880, Si88, SI8

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8802DB-T2-E1 Descrizione

***ure Electronics: Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT

***et: Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI8802DB-T2-E1 Maggiori informazioni

Si88xx 8V TrenchFET® Power MOSFETs: Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI8802DB-T2-E1 DISTI # V72:2272_09216581	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant	2974	1000:$0.1511 500:$0.2014 250:$0.2257 100:$0.2508 25:$0.3335 10:$0.3705 1:$0.4750
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10259In Stock	1000:$0.1695 500:$0.2193 100:$0.2991 10:$0.3990 1:$0.4700
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10259In Stock	1000:$0.1695 500:$0.2193 100:$0.2991 10:$0.3990 1:$0.4700
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.1597
SI8802DB-T2-E1 DISTI # 30155844	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.1683
SI8802DB-T2-E1 DISTI # 30883628	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant	2974	1000:$0.1511 500:$0.2014 250:$0.2257 100:$0.2508 56:$0.3335
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1279 6000:$0.1239 12000:$0.1189 18000:$0.1149 30000:$0.1119
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI8802DB-T2-E1 DISTI # 99W9639	Vishay Intertechnologies	MOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes	0	1:$0.1310 3000:$0.1300 6000:$0.1240 12000:$0.1100
SI8802DB-T2-E1 DISTI # 04X9769	Vishay Intertechnologies	MOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes	0	1:$0.2550 10:$0.2470 100:$0.1950 250:$0.1850 500:$0.1730 1000:$0.1390
SI8802DB-T2-E1 DISTI # 781-SI8802DB-T2-E1	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	14450	1:$0.5800 10:$0.3900 100:$0.2640 500:$0.2120 1000:$0.1590 3000:$0.1460 6000:$0.1370 9000:$0.1280
SI8802DBT2E1	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI8802DB-T2-E1 DISTI # C1S803601968173	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2974	250:$0.2257 100:$0.2508 25:$0.3335 10:$0.3705
SI8802DB-T2-E1	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	Americas -

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI8802DB-T2-E1 OMO.#: OMO-SI8802DB-T2-E1	MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
	Mfr.#: SI8802DB-T2-E1-CUT TAPE OMO.#: OMO-SI8802DB-T2-E1-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI8802DB-T2-E1 OMO.#: OMO-SI8802DB-T2-E1-VISHAY	MOSFET N-CH 8V MICROFOOT
	Mfr.#: SI8802DB-T2-EY OMO.#: OMO-SI8802DB-T2-EY-1190	Nuovo e originale
	Mfr.#: SI8802DBT2E1 OMO.#: OMO-SI8802DBT2E1-1190	Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di SI8802DB-T2-E1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,17 USD~~; ~~0,17 USD~~

10: ~~0,16 USD~~; ~~1,60 USD~~

100: ~~0,15 USD~~; ~~15,11 USD~~

500: ~~0,14 USD~~; ~~71,35 USD~~

1000: ~~0,13 USD~~; ~~134,30 USD~~

Iniziare con

SI8802DB-T 3
SI8802 4
SI880 16
Si88 227
SI8 2441

SI8802DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes