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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSP315PL6327HTSA1 DISTI # BSP315PL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP315PL6327HTSA1 DISTI # BSP315PL6327HTSA1CT-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP315PL6327HTSA1 DISTI # BSP315PL6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP315PL6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 71353 |
|
| BSP315P L6327 DISTI # 726-BSP315PL6327 | Infineon Technologies AG | MOSFET P-Ch -60V 1.17A SOT-223-3 RoHS: Compliant | 0 | |
| BSP315PL6327 | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 1.17A I(D), 60V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 765 |
|
| BSP315PL6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 980 | |
| BSP315PL6327 | Infineon Technologies AG | INSTOCK | 858 | |
| BSP315P L6327 | Infineon Technologies AG | INSTOCK | 896 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSE315P OMO.#: OMO-BSE315P-1190 |
Nuovo e originale |
|
|
Mfr.#: BSE315P L6327 OMO.#: OMO-BSE315P-L6327-1190 |
Nuovo e originale |