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PSMN1R5-30BLE

PSMN1R5-30BLE
Mfr. #:
PSMN1R5-30BLE
Produttore:
NXP Semiconductors
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PSMN1R5-30BLE Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Semiconduttori NXP
categoria di prodotto
FET - Single
Serie
-
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tecnologia
si
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
D2PAK
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
401W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
14934pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
120A (Tc)
Rds-On-Max-Id-Vgs
1.5 mOhm @ 25A, 10V
Vgs-th-Max-Id
2.15V @ 1mA
Gate-Carica-Qg-Vgs
228nC @ 10V
Pd-Power-Dissipazione
401 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
99.2 ns
Ora di alzarsi
156.1 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
120 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.7 V
Rds-On-Drain-Source-Resistenza
1.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
191.8 ns
Tempo di ritardo all'accensione tipico
100.6 ns
Qg-Gate-Carica
228 nC
Modalità canale
Aumento
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 120 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
***ment14 APAC
MOSFET, N-CH, 30V, 120A, D2PAK
***nell
MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:401W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Parte # Mfg. Descrizione Azione Prezzo
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
  • 4800000:$1.2010
  • 2400000:$1.2030
  • 480000:$1.3750
  • 48000:$1.6630
  • 4800:$1.7110
PSMN1R5-30BLEJ
DISTI # V72:2272_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-1-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		254In Stock
    • 100:$2.0996
    • 10:$2.6120
    • 1:$2.9100
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-6-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		254In Stock
    • 100:$2.0996
    • 10:$2.6120
    • 1:$2.9100
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-2-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		On Order
    • 2400:$1.3708
    • 1600:$1.4430
    • 800:$1.7110
    PSMN1R5-30BLEJ118
    DISTI # PSMN1R5-30BLEJ,118    		Avnet, Inc.MOS Power Transistors LV (< 200V) (Alt: PSMN1R5-30BLEJ,118)
    RoHS: Compliant
    Min Qty: 800    		Europe - 100
    • 8000:€1.1900
    • 4800:€1.2900
    • 1600:€1.3900
    • 3200:€1.3900
    • 800:€1.4900
    PSMN1R5-30BLEJ
    DISTI # PSMN1R5-30BLEJ    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R5-30BLEJ)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Tape and Reel      		Asia - 0
      • 240000:$1.2884
      • 120000:$1.3214
      • 48000:$1.3386
      • 24000:$1.3562
      • 14400:$1.3928
      • 9600:$1.4315
      • 4800:$1.4724
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLE118
        DISTI # PSMN1R5-30BLE118        		Avnet, Inc.- Bulk (Alt: PSMN1R5-30BLE118)
        Min Qty: 250
        Container: Bulk        		Americas - 0
        • 500:$1.1900
        • 750:$1.1900
        • 1250:$1.1900
        • 2500:$1.1900
        • 250:$1.2900
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3261
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLE118NXP SemiconductorsNow Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
        RoHS: Not Compliant        		2941
        • 1000:$1.3200
        • 500:$1.3900
        • 100:$1.4400
        • 25:$1.5000
        • 1:$1.6200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        Immagine Parte # Descrizione
        PSMN1R0-30YLC,115

        Mfr.#: PSMN1R0-30YLC,115

        OMO.#: OMO-PSMN1R0-30YLC-115

        		 MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
        PSMN1R5-30YLC,115

        Mfr.#: PSMN1R5-30YLC,115

        OMO.#: OMO-PSMN1R5-30YLC-115

        		 MOSFET N-Ch 30V 1.55mOhms
        PSMN1R5-30YL,115

        Mfr.#: PSMN1R5-30YL,115

        OMO.#: OMO-PSMN1R5-30YL-115

        		 MOSFET N-CHAN 30V 100A
        PSMN1R3-30YL,115

        Mfr.#: PSMN1R3-30YL,115

        OMO.#: OMO-PSMN1R3-30YL-115

        		 MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET
        PSMN1R5-40PS,127

        Mfr.#: PSMN1R5-40PS,127

        OMO.#: OMO-PSMN1R5-40PS-127

        		 MOSFET N-Ch 40V 1.6 mOhms
        PSMN1R3-30YL115

        Mfr.#: PSMN1R3-30YL115

        OMO.#: OMO-PSMN1R3-30YL115-1190

        		 Nuovo e originale
        PSMN1R4-30YLDX

        Mfr.#: PSMN1R4-30YLDX

        OMO.#: OMO-PSMN1R4-30YLDX-NEXPERIA

        		 MOSFET N-CH 30V 100A LFPAK
        PSMN1R8-30BL,118

        Mfr.#: PSMN1R8-30BL,118

        OMO.#: OMO-PSMN1R8-30BL-118-NEXPERIA

        		 RF Bipolar Transistors MOSFET Std N-chanMOSFET
        PSMN1R8-30BL118

        Mfr.#: PSMN1R8-30BL118

        OMO.#: OMO-PSMN1R8-30BL118-1190

        		 Now Nexperia PSMN1R8-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        PSMN1R7-25YLDX

        Mfr.#: PSMN1R7-25YLDX

        OMO.#: OMO-PSMN1R7-25YLDX-NEXPERIA

        		 PSMN1R7-25YLD/LFPAK/REEL 7 Q1
        Disponibilità
        Azione:
        Available
        Su ordine:
        4000
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