NGTD17R120F2WP

NGTD17R120F2WP
Mfr. #:
NGTD17R120F2WP
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 1200V/40A CJ61 FAST REC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTD17R120F2WP Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTD17R120F2WP Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Confezione:
Massa
Marca:
ON Semiconductor
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Tags
NGTD17, NGTD1, NGTD, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon
***enic
1.2kV +175¡Í@(Tj) Single 1.8V@35A SMD Switching Diode ROHS
***ark
1200V/40A Cj61 Fast Rectifier Unsawn Wafer Sales / Wjar
***emi
Rectifier 1200V 35A FS2 bare die
***ical
Rectifier Diode Switching 1.2KV 2-Pin Die WJAR
Parte # Mfg. Descrizione Azione Prezzo
NGTD17R120F2WP
DISTI # V36:1790_16156771
ON SemiconductorDiode Switching 1.2KV WJAR0
  • 527000:$0.5170
  • 263500:$0.5177
  • 52700:$0.6399
  • 5270:$0.9137
  • 527:$0.9630
NGTD17R120F2WP
DISTI # NGTD17R120F2WP-ND
ON SemiconductorDIODE GEN PURP 1.2KV DIE
RoHS: Compliant
Min Qty: 352
Container: Bulk
Temporarily Out of Stock
  • 352:$0.9630
NGTD17R120F2WP
DISTI # NGTD17R120F2WP
ON SemiconductorDiode Fast Switching 1200V 35A Bare DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: NGTD17R120F2WP)
RoHS: Compliant
Min Qty: 527
Container: Waffle Pack
Americas - 0
  • 5270:$0.5259
  • 2635:$0.5399
  • 1581:$0.5459
  • 1054:$0.5539
  • 527:$0.5569
NGTD17R120F2WP
DISTI # 92Y3742
ON Semiconductor1200V/40A CJ61 FAST REC / WJAR0
  • 5000:$0.7410
  • 2500:$0.7640
  • 1000:$0.9470
  • 500:$1.0600
  • 100:$1.1400
  • 10:$1.4200
  • 1:$1.6700
NGTD17R120F2WP
DISTI # 863-NGTD17R120F2WP
ON SemiconductorIGBT Transistors 1200V/40A CJ61 FAST REC
RoHS: Compliant
0
  • 352:$0.8530
  • 500:$0.7470
  • 1000:$0.6190
  • 2500:$0.5760
  • 5000:$0.5550
  • 10000:$0.5330
Immagine Parte # Descrizione
NGTD17R120F2WP

Mfr.#: NGTD17R120F2WP

OMO.#: OMO-NGTD17R120F2WP

IGBT Transistors 1200V/40A CJ61 FAST REC
NGTD17R120F2SWK

Mfr.#: NGTD17R120F2SWK

OMO.#: OMO-NGTD17R120F2SWK

IGBT Transistors 1200V/40A CJ61 FAST RECTI
NGTD17R120F2SWK

Mfr.#: NGTD17R120F2SWK

OMO.#: OMO-NGTD17R120F2SWK-ON-SEMICONDUCTOR

DIODE GEN PURP 1.2KV DIE
NGTD17R120F2WP

Mfr.#: NGTD17R120F2WP

OMO.#: OMO-NGTD17R120F2WP-ON-SEMICONDUCTOR

DIODE GEN PURP 1.2KV DIE
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di NGTD17R120F2WP è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
352
0,85 USD
300,26 USD
500
0,75 USD
373,50 USD
1000
0,62 USD
619,00 USD
2500
0,58 USD
1 440,00 USD
5000
0,56 USD
2 775,00 USD
10000
0,53 USD
5 330,00 USD
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