GS881E18CD-300

Mfr. #:: GS881E18CD-300
Produttore:: GSI Technology
Descrizione:: SRAM 2.5 or 3.3V 512K x 18 9M
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: GS881E18CD-300 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: GS881E18CD-300 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Tecnologia GSI

Categoria di prodotto:: SRAM

Dimensione della memoria:: 9 Mbit

Organizzazione:: 512 k x 18

Orario di accesso:: 5 ns

Frequenza massima di clock:: 300 MHz

Tipo di interfaccia:: Parallelo

Tensione di alimentazione - Max:: 3.6 V

Tensione di alimentazione - Min:: 2.3 V

Corrente di alimentazione - Max:: 150 mA, 205 mA

Temperatura di esercizio minima:: 0 C

Temperatura massima di esercizio:: + 70 C

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: BGA-165

Confezione:: Vassoio

Tipo di memoria:: SDR

Serie:: GS881E18CD

Tipo:: Conduttura DCD/Flusso passante

Marca:: Tecnologia GSI

Sensibile all'umidità:: sì

Tipologia di prodotto:: SRAM

Quantità confezione di fabbrica:: 36

sottocategoria:: Memoria e archiviazione dati

Nome depositato:: SyncBurst

Tags: GS881E18CD-3, GS881E18CD, GS881E1, GS881E, GS881, GS88, GS8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GS881E18CD-300 Descrizione

***et: SRAM Chip Sync Dual 2.5V/3.3V 9M-Bit 512K x 18 5ns/2.5ns 165-Pin FBGA Tray

***ure Electronics: CY7C1354CV25 9 Mb (256 K x 36) 166 MHz 2.5 V Pipelined SRAM - FBGA-165

***ress Semiconductor SCT: Synchronous SRAM, NoBL, Pipeline, 9216 Kb Density, 166 MHz Frequency, BGA-165

***ical: SRAM Chip Sync Quad 2.5V 9M-bit 256K x 36 3.5ns 165-Pin FBGA Tray

***-Wing Technology: 3A991.B.2.A Surface Mount CY7C1354 Tray ic memory 166MHz 3.5ns 15mm 180mA

***ponent Stockers USA: 256K X 36 ZBT SRAM 3.5 ns PBGA165

***i-Key: IC SRAM 9MBIT PARALLEL 165FBGA

***pmh: STANDARD SRAM, 512KX16, 55NS PBG

***ure Electronics: CY7C1360C Series 9 Mb (256 K x 36) 3.3 V 3.5 ns Static RAM - FPBGA-165

***ress Semiconductor SCT: Synchronous SRAM, Standard Sync, Pipeline SCD, 9216 Kb Density, 166 MHz Frequency, BGA-165

***et: SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.5ns 165-Pin FBGA Tray

***-Wing Technology: 3A991.B.2.A Surface Mount CY7C1360 Tray ic memory 166MHz 3.5ns 15mm 180mA

***ponent Stockers USA: 256K X 36 CACHE SRAM 3.5 ns PBGA165

***i-Key: IC SRAM 9MBIT PARALLEL 165FBGA

***et: SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 165-Pin BGA

*** Stop Electro: ZBT SRAM, 256KX36, 3.1ns, CMOS, PBGA165

***or: IC SRAM 9MBIT PARALLEL 165TFBGA

***et: SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 32 6.5ns 165-Pin FBGA Tray

***-Wing Technology: 3A991.B.2.A Surface Mount CY7C1365 Tray ic memory 133MHz 6.5ns 15mm 250mA

***ponent Stockers USA: 256K X 32 CACHE SRAM 6.5 ns BGA165

***i-Key: IC SRAM 8MBIT PARALLEL 165FBGA

***or: CACHE SRAM, 256KX32, 6.5NS, CMOS

***egrated Device Technology: 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM

***enic: CABGA-165(13x15) SRAM ROHS

***NGYU ELECTRONICS: IC SRAM 9M PARALLEL 165CABGA

***i-Key: IC SRAM 9MBIT PAR 165CABGA

*** Electronic Components: SRAM 9M 3.3V PBSRAM SLOW F/T

***eco: IC,71V67703S75BQGI

***se: 8Mb LP SRAM 512K x 16 2.7 ~ 3.6V 48ball TFBGA (8 x 10mm) 55ns Industrial Temp

***et: SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA

***-Wing Technology: Surface Mount Tray SRAM - Asynchronous SRAM ic memory 55ns 0.75mm 8Mb 2.7V

***i-Key: IC SRAM 8MBIT PARALLEL 48FPBGA

GS881E18CD-300 Maggiori informazioni

SyncBurst SRAMs: GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: GS881E18CGT-250IV OMO.#: OMO-GS881E18CGT-250IV	SRAM 1.8/2.5V 512K x 18 9M
	Mfr.#: GS881E18CD-150 OMO.#: OMO-GS881E18CD-150	SRAM 2.5 or 3.3V 512K x 18 9M
	Mfr.#: GS881E18CD-250 OMO.#: OMO-GS881E18CD-250	SRAM 2.5 or 3.3V 512K x 18 9M
	Mfr.#: GS881E18CGD-200I OMO.#: OMO-GS881E18CGD-200I	SRAM 2.5 or 3.3V 512K x 18 9M
	Mfr.#: GS881E18CD-300I OMO.#: OMO-GS881E18CD-300I	SRAM 2.5 or 3.3V 512K x 18 9M
	Mfr.#: GS881E18CGT-333I OMO.#: OMO-GS881E18CGT-333I	SRAM 2.5 or 3.3V 512K x 18 9M
	Mfr.#: GS881E18CGD-150IV OMO.#: OMO-GS881E18CGD-150IV	SRAM 1.8/2.5V 512K x 18 9M
	Mfr.#: GS881E18CD-150IV OMO.#: OMO-GS881E18CD-150IV	SRAM 1.8/2.5V 512K x 18 9M
	Mfr.#: GS881E18CGD-250IV OMO.#: OMO-GS881E18CGD-250IV	SRAM 1.8/2.5V 512K x 18 9M
	Mfr.#: GS881E18CD-250IV OMO.#: OMO-GS881E18CD-250IV	SRAM 1.8/2.5V 512K x 18 9M

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di GS881E18CD-300 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~15,77 USD~~; ~~15,77 USD~~

25: ~~14,64 USD~~; ~~366,00 USD~~

Iniziare con

GS881E18CD-3 4
GS881E18CD 15
GS881E1 46
GS881E 143
GS881 456
GS88 1087
GS8 10333

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GS881E18CD-300

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes