FQH8N100C

FQH8N100C
Mfr. #:
FQH8N100C
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 1000V N-Channel
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQH8N100C Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
1 kV
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
1.45 Ohms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
225 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
QFET
Confezione:
Tubo
Altezza:
20.82 mm
Lunghezza:
15.87 mm
Serie:
FQH8N100C
Tipo di transistor:
1 N-Channel
Larghezza:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
80 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
95 ns
Quantità confezione di fabbrica:
450
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
122 ns
Tempo di ritardo di accensione tipico:
50 ns
Unità di peso:
0.225401 oz
Tags
FQH8, FQH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***m
    A***m
    MV

    good

    2019-03-10
    S***v
    S***v
    BG

    NOTHING. The seller did not send me anything. Do not buy

    2019-07-11
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-247
***r Electronics
Power Field-Effect Transistor, 8A I(D), 1000V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N-CH, 1KV, 8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descrizione Azione Prezzo
FQH8N100C
DISTI # V99:2348_06359880
ON Semiconductor1000V, 8A, CFET367
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # V36:1790_06359880
ON Semiconductor1000V, 8A, CFET28
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # FQH8N100C-ND
ON SemiconductorMOSFET N-CH 1000V 8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
416In Stock
  • 1350:$1.9663
  • 900:$2.0966
  • 450:$2.5526
  • 10:$3.3990
  • 1:$3.7900
FQH8N100C
DISTI # 31014348
ON Semiconductor1000V, 8A, CFET450
  • 450:$1.9200
FQH8N100C
DISTI # 31268064
ON Semiconductor1000V, 8A, CFET367
  • 5:$2.6370
FQH8N100C
DISTI # 31040247
ON Semiconductor1000V, 8A, CFET28
  • 100:$2.0320
  • 10:$2.3030
  • 5:$2.6370
FQH8N100C
DISTI # 30617742
ON Semiconductor1000V, 8A, CFET18
  • 10:$2.4863
  • 7:$3.6720
FQH8N100C
DISTI # FQH8N100C
ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FQH8N100C)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.3900
  • 900:$1.3900
  • 1800:$1.2900
  • 2700:$1.2900
  • 4500:$1.2900
FQH8N100C
DISTI # 46AC0861
ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes197
  • 1:$3.2700
  • 10:$2.8500
  • 25:$2.5100
  • 50:$2.3600
  • 100:$2.0600
  • 250:$1.7600
  • 500:$1.6900
FQH8N100CON Semiconductor 
RoHS: Not Compliant
600
  • 1000:$1.7600
  • 500:$1.8600
  • 100:$1.9300
  • 25:$2.0200
  • 1:$2.1700
FQH8N100C
DISTI # 512-FQH8N100C
ON SemiconductorMOSFET 1000V N-Channel
RoHS: Compliant
550
  • 1:$3.1400
  • 10:$2.6700
  • 100:$2.3100
  • 250:$2.2000
  • 500:$1.9700
  • 1000:$1.6600
  • 2500:$1.5800
  • 5000:$1.5200
FQH8N100C
DISTI # XSKDRABV0030457
ON Semiconductor 
RoHS: Compliant
648
  • 450:$2.2900
  • 648:$2.1300
FQH8N100C
DISTI # C1S541901511456
ON SemiconductorMOSFETs18
  • 10:$1.9500
  • 1:$2.8800
FQH8N100C
DISTI # C1S226600596019
ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
367
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # 2825207
ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant
200
  • 1:£3.1000
  • 10:£2.4700
  • 100:£2.1500
  • 250:£1.8200
  • 500:£1.4800
FQH8N100C
DISTI # 2825207
ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant
197
  • 1:$4.9000
  • 10:$4.2700
  • 100:$3.7000
  • 250:$3.3300
  • 500:$2.9200
  • 1000:$2.6400
Immagine Parte # Descrizione
MJE340STU

Mfr.#: MJE340STU

OMO.#: OMO-MJE340STU

Bipolar Transistors - BJT NPN Epitaxial Sil
BZG04-150-M3-08

Mfr.#: BZG04-150-M3-08

OMO.#: OMO-BZG04-150-M3-08

Zener Diodes Uni-direc 300W Pppm SMA (DO-214AC)
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1

MOSFET MOSFET_(75V,120V(
IRFBG20PBF

Mfr.#: IRFBG20PBF

OMO.#: OMO-IRFBG20PBF

MOSFET RECOMMENDED ALT 844-IRFBF20PBF
CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

OMO.#: OMO-CRCW0805470RFKEA

Thick Film Resistors - SMD 1/8watt 470ohms 1% 100ppm
CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

OMO.#: OMO-CRCW0805470RFKEA-VISHAY-DALE

Thick Film Resistors - SMD 1/8watt 470ohms 1% 100ppm
IRFBG20PBF

Mfr.#: IRFBG20PBF

OMO.#: OMO-IRFBG20PBF-VISHAY

MOSFET N-CH 1000V 1.4A TO-220AB
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
BZG04-150-M3-08

Mfr.#: BZG04-150-M3-08

OMO.#: OMO-BZG04-150-M3-08-VISHAY

Zener Diodes with Surge Current
SQMR547KJ

Mfr.#: SQMR547KJ

OMO.#: OMO-SQMR547KJ-TE-CONNECTIVITY-AMP

Metal Film Resistors - Through Hole SQM5 47K 5% (METAL FILM)
Disponibilità
Azione:
900
Su ordine:
2883
Inserisci la quantità:
Il prezzo attuale di FQH8N100C è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
3,14 USD
3,14 USD
10
2,67 USD
26,70 USD
100
2,31 USD
231,00 USD
250
2,20 USD
550,00 USD
500
1,97 USD
985,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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