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FGH30T65UPDT-F155

FGH30T65UPDT-F155
Mfr. #:
FGH30T65UPDT-F155
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors FS1TIGBT TO247 30A 650V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGH30T65UPDT-F155 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGH30T65UPDT-F155 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
2.1 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
60 A
Pd - Dissipazione di potenza:
250 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FGH30T65UPDT
Confezione:
Tubo
Corrente continua del collettore Ic Max:
30 A
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
400 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Parte # Alias:
FGH30T65UPDT_F155
Unità di peso:
0.225401 oz
Tags
FGH30T, FGH3, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Parte # Mfg. Descrizione Azione Prezzo
FGH30T65UPDT_F155
DISTI # V99:2348_06359447		ON Semiconductor650V FIELD STOP TRENCH IGBT88
  • 10:$3.8140
  • 1:$4.9719
FGH30T65UPDT_F155
DISTI # V36:1790_06359447		ON Semiconductor650V FIELD STOP TRENCH IGBT0
  • 450000:$2.0850
  • 225000:$2.0900
  • 45000:$2.8050
  • 4500:$4.2890
  • 450:$4.5500
FGH30T65UPDT-F155
DISTI # FGH30T65UPDT-F155-ND		ON SemiconductorIGBT 650V 60A 250W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		446In Stock
  • 2700:$2.4080
  • 900:$2.9980
  • 450:$3.3411
  • 25:$4.0636
  • 10:$4.2980
  • 1:$4.7900
FGH30T65UPDT_F155
DISTI # 31283856		ON Semiconductor650V FIELD STOP TRENCH IGBT5400
  • 450:$4.5500
FGH30T65UPDT_F155
DISTI # 32638819		ON Semiconductor650V FIELD STOP TRENCH IGBT450
  • 450:$2.2947
FGH30T65UPDT_F155
DISTI # 31325246		ON Semiconductor650V FIELD STOP TRENCH IGBT88
  • 3:$4.9719
FGH30T65UPDT_F155
DISTI # FGH30T65UPDT-F155		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: FGH30T65UPDT-F155)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
FGH30T65UPDT_F155
DISTI # FGH30T65UPDT_F155		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Bulk (Alt: FGH30T65UPDT_F155)
Min Qty: 146
Container: Bulk		Americas - 0
  • 730:$2.0900
  • 1460:$2.0900
  • 146:$2.1900
  • 292:$2.1900
  • 438:$2.1900
FGH30T65UPDT_F155
DISTI # FGH30T65UPDT-F155		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH30T65UPDT-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$2.0900
  • 4500:$2.0900
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
FGH30T65UPDT-F155
DISTI # 48AC1095		ON SemiconductorFS1TIGBT TO247 30A 650V / TUBE0
  • 1000:$3.0900
  • 500:$3.2800
  • 250:$3.5200
  • 100:$3.8300
  • 1:$4.6600
FGH30T65UPDT-F155
DISTI # 512-30T65UPDT_F155		ON SemiconductorIGBT Transistors FS1TIGBT TO247 30A 650V
RoHS: Compliant		598
  • 1:$4.5500
  • 10:$3.8700
  • 100:$3.3500
  • 250:$3.1800
  • 500:$2.8500
FGH30T65UPDT_F155Fairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant		450
  • 1000:$2.2600
  • 500:$2.3800
  • 100:$2.4800
  • 25:$2.5900
  • 1:$2.7900
Immagine Parte # Descrizione
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
Disponibilità
Azione:
598
Su ordine:
2581
Inserisci la quantità:
Il prezzo attuale di FGH30T65UPDT-F155 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,55 USD
4,55 USD
10
3,87 USD
38,70 USD
100
3,35 USD
335,00 USD
250
3,18 USD
795,00 USD
500
2,85 USD
1 425,00 USD
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