IPB117N20NFDATMA1

IPB117N20NFDATMA1
Mfr. #:
IPB117N20NFDATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 200V 84A D2PAK-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB117N20NFDATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
84 A
Rds On - Resistenza Drain-Source:
10.3 mOhms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
87 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
300 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
4.4 mm
Lunghezza:
10 mm
Serie:
Diodo veloce OptiMOS
Tipo di transistor:
1 N-Channel
Larghezza:
9.25 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
70 S
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
10 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
24 ns
Tempo di ritardo di accensione tipico:
13 ns
Parte # Alias:
IPB117N20NFD SP001107232
Unità di peso:
0.068654 oz
Tags
IPB117, IPB11, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1
***ure Electronics
Single N-Channel 200 V 11.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK-3
***p One Stop Japan
Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R
***ical
Trans MOSFET N-CH 200V 84A 3-Pin(2+Tab) TO-263
***i-Key
MOSFET N-CH 200V 84A D2PAK
***ronik
N-CH 200V 84A 11,7mOhm TO263
***ark
Mosfet, N-Ch, 200V, 84A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.0103Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 84A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS FD Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 200V, 84A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:84A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.0103ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS FD Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
Parte # Mfg. Descrizione Azione Prezzo
IPB117N20NFDATMA1
DISTI # V72:2272_06377686
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R720
  • 500:$3.6750
  • 250:$4.2160
  • 100:$4.4429
  • 25:$4.6080
  • 10:$5.1200
  • 1:$6.6099
IPB117N20NFDATMA1
DISTI # V36:1790_06377686
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$2.6750
  • 500000:$2.6780
  • 100000:$2.9070
  • 10000:$3.3090
  • 1000:$3.3760
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
910In Stock
  • 500:$4.1225
  • 100:$4.8427
  • 10:$5.9110
  • 1:$6.5800
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
910In Stock
  • 500:$4.1225
  • 100:$4.8427
  • 10:$5.9110
  • 1:$6.5800
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 84A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.2068
  • 1000:$3.3756
IPB117N20NFDATMA1
DISTI # 32874591
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin(2+Tab) D2PAK T/R720
  • 500:$3.6750
  • 250:$4.2160
  • 100:$4.4429
  • 25:$4.6080
  • 10:$5.1200
  • 3:$6.6099
IPB117N20NFDATMA1
DISTI # SP001107232
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R (Alt: SP001107232)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 1000
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.4900
  • 2000:€2.5900
  • 1000:€2.6900
IPB117N20NFDATMA1
DISTI # IPB117N20NFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 200V 84A 3-Pin D2PAK T/R - Tape and Reel (Alt: IPB117N20NFDATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$2.2900
  • 10000:$2.2900
  • 4000:$2.3900
  • 2000:$2.4900
  • 1000:$2.5900
IPB117N20NFDATMA1
DISTI # 97Y1821
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 500:$3.8500
  • 250:$4.2800
  • 100:$4.5100
  • 50:$4.7500
  • 25:$4.9800
  • 10:$5.2100
  • 1:$6.1300
IPB117N20NFDATMA1Infineon Technologies AGSingle N-Channel 200 V 11.7 mOhm 65 nC OptiMOS Power Mosfet - D2PAK-3
RoHS: Not Compliant
6Cut Tape/Mini-Reel
  • 1:$4.5200
  • 50:$3.2900
  • 100:$3.1100
  • 250:$2.8900
  • 500:$2.7300
IPB117N20NFD
DISTI # 726-IPB117N20NFDATMA
Infineon Technologies AGMOSFET N-Ch 200V 84A D2PAK-2
RoHS: Compliant
325
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
IPB117N20NFDATMA1
DISTI # 726-IPB117N20NFD
Infineon Technologies AGMOSFET N-Ch 200V 84A D2PAK-2
RoHS: Compliant
62
  • 1:$6.0700
  • 10:$5.1600
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8100
  • 1000:$3.2100
  • 2000:$3.0500
IPB117N20NFDATMA1
DISTI # 1107458P
Infineon Technologies AGMOSFET N-CHAN OPTIMOS-FD 200V 84A TO263, RL500
  • 200:£3.2600
  • 100:£3.4300
  • 40:£3.6700
  • 10:£4.1050
IPB117N20NFDATMA1
DISTI # 2617439
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3
RoHS: Compliant
223
  • 500:$6.6000
  • 100:$8.1400
  • 10:$9.9300
  • 1:$11.1100
IPB117N20NFDATMA1
DISTI # 2617439
Infineon Technologies AGMOSFET, N-CH, 200V, 84A, TO-263-3559
  • 500:£2.9400
  • 250:£3.2600
  • 100:£3.4400
  • 10:£3.9800
  • 1:£5.1600
Immagine Parte # Descrizione
ISO7763FDW

Mfr.#: ISO7763FDW

OMO.#: OMO-ISO7763FDW

Digital Isolators ISO7763FDW/R DIG ISO - MYNA - 6CH
IPB110N20N3LFATMA1

Mfr.#: IPB110N20N3LFATMA1

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MOSFET
STD13N60DM2

Mfr.#: STD13N60DM2

OMO.#: OMO-STD13N60DM2

MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
R6020KNX

Mfr.#: R6020KNX

OMO.#: OMO-R6020KNX

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IDD06SG60CXTMA2

Mfr.#: IDD06SG60CXTMA2

OMO.#: OMO-IDD06SG60CXTMA2

Schottky Diodes & Rectifiers SIC DIODES
C3M0075120J

Mfr.#: C3M0075120J

OMO.#: OMO-C3M0075120J

MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
08055U510GAT2A

Mfr.#: 08055U510GAT2A

OMO.#: OMO-08055U510GAT2A

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 51 pF 0.02 2% Tol
ERJ-PB3B4991V

Mfr.#: ERJ-PB3B4991V

OMO.#: OMO-ERJ-PB3B4991V

Thick Film Resistors - SMD 0603 Anti-Surge Res. 0.1%, 4.99Koh
08055U510GAT2A

Mfr.#: 08055U510GAT2A

OMO.#: OMO-08055U510GAT2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 5.1pF 2%
STD13N60DM2

Mfr.#: STD13N60DM2

OMO.#: OMO-STD13N60DM2-STMICROELECTRONICS

N-CHANNEL 600 V, 0.310 OHM TYP.,
Disponibilità
Azione:
173
Su ordine:
2156
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est. Prezzo
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6,07 USD
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5,16 USD
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3,81 USD
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