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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSM35GD120DN2E3224BOSA1 DISTI # V36:1790_17562500 | Infineon Technologies AG | BSM35GD120DN2E3224BOSA1 | 0 |
|
| BSM35GD120DN2E3224BOSA1 DISTI # BSM35GD120DN2E3224BOSA1-ND | Infineon Technologies AG | IGBT 2 LOW POWER ECONO2-2 Min Qty: 10 Container: Tray | Limited Supply - Call |
|
| BSM35GD120DN2E3224BOSA1 DISTI # BSM35GD120DN2E3224BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 35A nom 280W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM35GD120DN2E3224BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| BSM35GD120DN2E3224 DISTI # 641-BSM35GD120DN2E32 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 50A RoHS: Not compliant | 26 |
|
| BSM35GD120DN2E3224BOSA1 DISTI # XSKDRABV0032779 | Infineon Technologies AG | RoHS: Compliant | 8 in Stock0 on Order |
|
| BSM35GD120DN2E3224 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | Europe - 20 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: BSM35GD120DN2E3224 OMO.#: OMO-BSM35GD120DN2E3224 |
IGBT Modules N-CH 1.2KV 50A |
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Mfr.#: BSM35GD120DLCE3224 OMO.#: OMO-BSM35GD120DLCE3224 |
IGBT Modules N-CH 1.2KV 70A |
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Mfr.#: BSM35GD120DN2BOSA1 OMO.#: OMO-BSM35GD120DN2BOSA1-1190 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: BSM35GD120DN2E OMO.#: OMO-BSM35GD120DN2E-1190 |
Nuovo e originale |
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Mfr.#: BSM35GD120DN2E3224(6) |
Nuovo e originale |
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Mfr.#: BSM35GD120DN2E3226 OMO.#: OMO-BSM35GD120DN2E3226-1190 |
Nuovo e originale |
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Mfr.#: BSM35GD120DN2_E3226 OMO.#: OMO-BSM35GD120DN2-E3226-1190 |
Nuovo e originale |
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Mfr.#: BSM35GD120ND2 OMO.#: OMO-BSM35GD120ND2-1190 |
Nuovo e originale |
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Mfr.#: BSM35GD120DLCE3224 OMO.#: OMO-BSM35GD120DLCE3224-125 |
IGBT Modules N-CH 1.2KV 70A |
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Mfr.#: BSM35GD120DN2E3224 OMO.#: OMO-BSM35GD120DN2E3224-125 |
IGBT Modules N-CH 1.2KV 50A |