IXYN82N120C3H1

IXYN82N120C3H1
Mfr. #:
IXYN82N120C3H1
Produttore:
Littelfuse
Descrizione:
IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYN82N120C3H1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN82N120C3H1 DatasheetIXYN82N120C3H1 Datasheet (P4-P6)IXYN82N120C3H1 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
IXYN82N120C3H1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
SOT-227B-4
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.75 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
105 A
Pd - Dissipazione di potenza:
500 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
IXYN82N120
Confezione:
Tubo
Corrente continua del collettore Ic Max:
105 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
1.058219 oz
Tags
IXYN8, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Chip N-CH 1200V 105A 500000mW Automotive 4-Pin SOT-227B
***i-Key
IGBT MODULE 1200V 105A SOT227B
***ark
Igbt, N-Ch, 1.2Kv, 105A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:105A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, N-CH, 1.2KV, 105A, SOT-227B; Transistor Polarity:N Channel; DC Collector Current:105A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:XPT GenX3 Series; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, CA-N, 1,2KV, 105A, SOT-227B; Polarità Transistor:Canale N; Corrente di Collettore CC:105A; Tensione Saturaz Collettore-Emettitore Vce(on):3.2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:SOT-227B; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:XPT GenX3 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXYN82N120C3H1
DISTI # 23829664
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 105A 4-Pin SOT-227B
RoHS: Compliant
220
  • 10:$29.5733
IXYN82N120C3H1
DISTI # IXYN82N120C3H1-ND
IXYS CorporationIGBT MODULE 1200V 105A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube
136In Stock
  • 250:$27.5500
  • 100:$30.0200
  • 30:$32.3000
  • 10:$35.1500
  • 1:$38.0000
IXYN82N120C3H1
DISTI # 747-IXYN82N120C3H1
IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/105A,Copack
RoHS: Compliant
37
  • 1:$38.0000
  • 5:$36.1000
  • 10:$35.1500
  • 25:$32.3000
  • 50:$31.5200
  • 100:$30.0200
  • 200:$27.5500
IXYN82N120C3H1IXYS CorporationGenX3 XPT IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
RoHS: Compliant
370Tube
  • 1:$28.1600
  • 2:$26.7700
  • 5:$25.0200
  • 10:$23.7800
  • 25:$21.1200
IXYN82N120C3H1
DISTI # 8047622
IXYS CorporationIGBT 1200V 105A XPT GENX3 DIODE SOT227B, EA3
  • 1:£27.4900
  • 2:£27.3600
  • 5:£27.2200
  • 10:£24.4600
  • 30:£23.3600
IXYN82N120C3H1
DISTI # 2674802
IXYS CorporationIGBT, N-CH, 1.2KV, 105A, SOT-227B
RoHS: Compliant
0
  • 1:£28.7500
  • 5:£27.3100
  • 10:£24.4400
  • 50:£23.8400
  • 100:£20.8400
IXYN82N120C3H1
DISTI # XSFT00000023520
IXYS CorporationGENX3 XPT IGBT 1200 V 105 A CHASSIS MOUNTHIGH-SPEED IGBT - SOT-227B
RoHS: Compliant
280
  • 10:$35.6400
Immagine Parte # Descrizione
30KPA60A

Mfr.#: 30KPA60A

OMO.#: OMO-30KPA60A

TVS Diodes / ESD Suppressors TVS Hi Power Diode 30KPA Axial
KSC1815YTA

Mfr.#: KSC1815YTA

OMO.#: OMO-KSC1815YTA

Bipolar Transistors - BJT NPN Epitaxial Sil
FDN335N

Mfr.#: FDN335N

OMO.#: OMO-FDN335N

MOSFET SSOT-3 N-CH 20V
HCPL2630

Mfr.#: HCPL2630

OMO.#: OMO-HCPL2630

High Speed Optocouplers DIP-8 HS LOGIC GATE
LTV-816

Mfr.#: LTV-816

OMO.#: OMO-LTV-816

Transistor Output Optocouplers Optocoupler Phototrans
NC7SZ157P6X

Mfr.#: NC7SZ157P6X

OMO.#: OMO-NC7SZ157P6X

Encoders, Decoders, Multiplexers & Demultiplexers UHS 2-Ip Non-Inv Mul
NJM2881F33-TE1

Mfr.#: NJM2881F33-TE1

OMO.#: OMO-NJM2881F33-TE1

LDO Voltage Regulators LDO
LTC3407EDD-3#PBF

Mfr.#: LTC3407EDD-3#PBF

OMO.#: OMO-LTC3407EDD-3-PBF

Switching Voltage Regulators Dual, Sync. 800mA 2.25MHz Step-dwn Converter in DFN
EVAL-SDP-CS1Z

Mfr.#: EVAL-SDP-CS1Z

OMO.#: OMO-EVAL-SDP-CS1Z

Other Development Tools EVAL-SDP-CS1Z
A15028-01

Mfr.#: A15028-01

OMO.#: OMO-A15028-01

Thermal Interface Products Tgrease 880 1/2kg 3.1 W/mK H/P
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di IXYN82N120C3H1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
38,00 USD
38,00 USD
5
36,10 USD
180,50 USD
10
35,15 USD
351,50 USD
25
32,30 USD
807,50 USD
50
31,52 USD
1 576,00 USD
100
30,02 USD
3 002,00 USD
200
27,55 USD
5 510,00 USD
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