SI4825DDY-T1-GE3

Mfr. #:: SI4825DDY-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET -30V Vds 25V Vgs SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI4825DDY-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4825DDY-T1-GE3 Datasheet SI4825DDY-T1-GE3 Datasheet (P4-P6)SI4825DDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:: SI4825DDY-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 14.9 A

Rds On - Resistenza Drain-Source:: 12.5 mOhms

Vgs th - Tensione di soglia gate-source:: 1.4 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 57 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 5 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI4

Tipo di transistor:: 1 P-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 28 S

Tempo di caduta:: 9 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 12 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 40 ns

Tempo di ritardo di accensione tipico:: 13 ns

Parte # Alias:: SI4825DDY-GE3

Unità di peso:: 0.006596 oz

Tags: SI4825D, SI4825, SI482, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4825DDY-T1-GE3 Valutazioni e recensioni

S***y

Received the order within three weeks... tested too... it works quite well and is highly accurate in giving the coordinates... just one note... when I used the first time, it took about an hour to get a satellite lock anyway an impressive product and the description was very accurate, you get what you see... loved the seller, must buy.♥️

2019-06-05

R***v

As in the description, it came 15 days before spassk-far

2019-06-21

SI4825DDY-T1-GE3 Descrizione

***et Europe: Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.9A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: No

***ment14 APAC: MOSFET,P CH,DIODE,30V,14.9A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10.9A; Power Dissipation Pd:2.7W; Voltage Vgs Max:-25V

SI4825DDY-T1-GE3 Maggiori informazioni

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI4825DDY-T1-GE3 DISTI # V72:2272_09216587	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R RoHS: Compliant	2238	1000:$0.4110 500:$0.5030 250:$0.5695 100:$0.5930 25:$0.7467 10:$0.8477 1:$1.0227
SI4825DDY-T1-GE3 DISTI # V36:1790_09216587	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.3681 1250000:$0.3683 250000:$0.3785 25000:$0.3944 2500:$0.3969
SI4825DDY-T1-GE3 DISTI # SI4825DDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 14.9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12251In Stock	1000:$0.4380 500:$0.5548 100:$0.6716 10:$0.8610 1:$0.9600
SI4825DDY-T1-GE3 DISTI # SI4825DDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 14.9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12251In Stock	1000:$0.4380 500:$0.5548 100:$0.6716 10:$0.8610 1:$0.9600
SI4825DDY-T1-GE3 DISTI # SI4825DDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 14.9A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	25000:$0.3591 12500:$0.3629 5000:$0.3771 2500:$0.3969
SI4825DDY-T1-GE3 DISTI # 31264063	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R RoHS: Compliant	5000	2500:$0.3139
SI4825DDY-T1-GE3 DISTI # 30172383	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R RoHS: Compliant	2238	19:$1.0227
SI4825DDY-T1-GE3 DISTI # SI4825DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 12500	125000:$0.4913 62500:$0.4997 25000:$0.5083 12500:$0.5264 7500:$0.5459 5000:$0.5669 2500:$0.5896
SI4825DDY-T1-GE3 DISTI # SI4825DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3289 15000:€0.3539 10000:€0.3829 5000:€0.4449 2500:€0.6529
SI4825DDY-T1-GE3 DISTI # SI4825DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4825DDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3462 15000:$0.3557 10000:$0.3659 5000:$0.3814 2500:$0.3930
SI4825DDY-T1-GE3 DISTI # 15R5086	Vishay Intertechnologies	MOSFET Transistor, P Channel, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V	0	10000:$0.3390 6000:$0.3470 4000:$0.3600 2000:$0.4000 1000:$0.4400 1:$0.4590
SI4825DDY-T1-GE3 DISTI # 23T8516	Vishay Intertechnologies	MOSFET,P CHANNEL,DIODE,30V,14.9A,8-SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes	4305	500:$0.5570 250:$0.5970 100:$0.6360 50:$0.6930 25:$0.7510 10:$0.8080 1:$0.9720
SI4825DDY-T1-GE3. DISTI # 28AC2146	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:2.7W,No. of Pins:8PinsRoHS Compliant: No	0	10000:$0.3390 6000:$0.3470 4000:$0.3600 2000:$0.4000 1000:$0.4400 1:$0.4590
SI4825DDY-T1-GE3 DISTI # 70459545	Vishay Siliconix	30V 14.9A 5.0W 12.5mohm @ 10V RoHS: Compliant	0	2500:$0.5720 5000:$0.5450
SI4825DDY-T1-GE3 DISTI # 781-SI4825DDY-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant	6464	1:$0.9400 10:$0.7770 100:$0.5960 500:$0.5130 1000:$0.4040 2500:$0.3770 5000:$0.3590 10000:$0.3450
SI4825DDY-T1-GE3	Vishay Semiconductors	14900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA	1520	365:$0.4400 92:$0.5500 1:$1.1000
SI4825DDY-T1-GE3 DISTI # 1807295	Vishay Intertechnologies	P-CH MOSFET SO-8 30V 13MOHM @ 10V- LEAD(, RL	2470	10000:£0.3200 5000:£0.3300 2500:£0.3410
SI4825DDY-T1-GE3 DISTI # TMOSP10626	Vishay Intertechnologies	P-CH 30V 14,9A 12,5mOhm SO-8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2500:$0.4940 5000:$0.4658 7500:$0.4375 10000:$0.3811
SI4825DDY-T1-GE3 DISTI # 1858962	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,14.9A,8-SOIC	4680	500:£0.3600 250:£0.3890 100:£0.4180 25:£0.5450 5:£0.6770
SI4825DDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant	Americas - 2500
SI4825DDY-T1-GE3 DISTI # 1858962RL	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,14.9A,8-SOIC RoHS: Compliant	0	2500:$0.7600 500:$0.7750 100:$0.9000 10:$1.1700 1:$1.4200
SI4825DDY-T1-GE3 DISTI # 1858962	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,14.9A,8-SOIC RoHS: Compliant	4300	2500:$0.7600 500:$0.7750 100:$0.9000 10:$1.1700 1:$1.4200

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Disponibilità

Azione:: Available
Su ordine:: 1989
Inserisci la quantità:

Il prezzo attuale di SI4825DDY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,94 USD~~; ~~0,94 USD~~

10: ~~0,78 USD~~; ~~7,77 USD~~

100: ~~0,60 USD~~; ~~59,60 USD~~

500: ~~0,51 USD~~; ~~256,50 USD~~

1000: ~~0,40 USD~~; ~~404,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SI4825DDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

S***y

R***v

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes