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VN2410L-G-P013

VN2410L-G-P013
Mfr. #:
VN2410L-G-P013
Produttore:
Microchip Technology
Descrizione:
MOSFET N-CH Enhancmnt Mode MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
VN2410L-G-P013 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
VN2410L-G-P013 maggiori informazioni VN2410L-G-P013 Product Details
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-92-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
240 V
Id - Corrente di scarico continua:
190 mA
Rds On - Resistenza Drain-Source:
10 Ohms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Pacchetto munizioni
Prodotto:
MOSFET piccolo segnale
Tipo di transistor:
1 N-Channel
Marca:
Tecnologia a microchip
Tempo di caduta:
24 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
2000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
23 ns
Tempo di ritardo di accensione tipico:
8 ns
Unità di peso:
0.016000 oz
Tags
VN2410L-G, VN2410L, VN241, VN24, VN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R
***roFlash
Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***hard Electronics
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ark
P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V
***et Europe
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
***roFlash
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET P-CH 240V 0.2A Automotive 3-Pin E-Line
***ure Electronics
P-Channel 240 V 1 A 750 mW Vertical DMOS FET - TO-92
***ark
Mosfet Bvdss: 101V~250V Ep3sc T&R 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET P-Channel 240V 0.2A E-Line
***nell
MOSFET, P, LOGIC, E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: -240V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power D
***S
French Electronic Distributor since 1988
***ukat
P-Ch -240V -0,2A 0,75W 9R E-Line
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***icroelectronics
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
***et
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack
*** Electronic Components
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
***r Electronics
Small Signal Field-Effect Transistor
***el Electronic
CAP CER 2200PF 250V C0G RADIAL
Parte # Mfg. Descrizione Azione Prezzo
VN2410L-G-P013
DISTI # VN2410L-G-P013-ND		Microchip Technology IncMOSFET N-CH 240V 0.19A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 2000:$0.7416
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncTrans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R - Ammo Pack (Alt: VN2410L-G-P013)
RoHS: Compliant
Min Qty: 2000
Container: Ammo Pack		Americas - 0
  • 2000:$0.5109
  • 4000:$0.4939
  • 8000:$0.4779
  • 12000:$0.4629
  • 20000:$0.4559
VN2410L-G-P013
DISTI # 70483926		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,240V,10 Ohm3 TO-92AMMO
RoHS: Compliant		0
  • 2000:$1.0500
VN2410L-G-P013
DISTI # 689-VN2410L-G-P013		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		894
  • 1:$0.9800
  • 10:$0.9650
  • 25:$0.8140
  • 100:$0.7420
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE240V10 Ohm
RoHS: Compliant		0
  • 1000:$0.6000
  • 100:$0.7200
  • 26:$0.7900
  • 1:$0.9500
Immagine Parte # Descrizione
VN2410L-G-P013

Mfr.#: VN2410L-G-P013

OMO.#: OMO-VN2410L-G-P013

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Disponibilità
Azione:
894
Su ordine:
2877
Inserisci la quantità:
Il prezzo attuale di VN2410L-G-P013 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,97 USD
0,97 USD
10
0,96 USD
9,64 USD
25
0,81 USD
20,33 USD
100
0,74 USD
74,10 USD
250
0,65 USD
163,00 USD
500
0,56 USD
278,00 USD
1000
0,51 USD
506,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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