FGP20N60UFDTU

FGP20N60UFDTU
Mfr. #:
FGP20N60UFDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 600V, 20A Field Stop
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGP20N60UFDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGP20N60UFDTU maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione massima dell'emettitore di gate:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGP20N60UFD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
40 A
Altezza:
9.4 mm
Lunghezza:
10.67 mm
Larghezza:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
800
sottocategoria:
IGBT
Unità di peso:
0.063493 oz
Tags
FGP20N60U, FGP20N60, FGP20N, FGP2, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FGP20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-220 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, 600V, 40A, TO-220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor; Available until stocks are exhausted
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220 Tube
*** Electronic Components
IGBT Transistors IGBT PRODUCTS
***or
IKP20N60 - AUTOMOTIVE IGBT DISCR
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Dis High Perf IGBT
***-Wing Technology
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.6V @ 15V 3A 6A 30W 52ns
***inecomponents.com
Discrete, High Performance IGBT with Diode
***el Electronic
Res Thick Film 0402 6.49K Ohm 1% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
***i-Key
IGBT 600V 6A 22W TO220F
***i-Key Marketplace
IGBT, 6A, 600V, N-CHANNEL
***ser
IGBTs 600V/3A/w/FRD
***i-Key
IGBT 600V 28A 125W TO220AB
***el Electronic
IC REG LINEAR 3V 1.5A TO220FP-3
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Fall Typ:50ns; Time, Rise:4.5ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 40A 37000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
H Series 600 V 40 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
IGBT Trench gate,600V 20A/100 deg,TO220
***nell
IGBT, SINGLE, 600V, 40A, TO-220FP; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Parte # Mfg. Descrizione Azione Prezzo
FGP20N60UFDTU
DISTI # V36:1790_06359735
ON SemiconductorN-CH 600VV 20A FS PLANAR IGBT394
  • 1000:$1.6770
  • 500:$1.9270
  • 100:$2.3290
  • 10:$2.6840
  • 1:$3.4573
FGP20N60UFDTU
DISTI # FGP20N60UFDTU-ND
ON SemiconductorIGBT 600V 40A 165W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
2143In Stock
  • 3200:$1.4000
  • 800:$1.7430
  • 100:$2.0475
  • 25:$2.3624
  • 10:$2.4990
  • 1:$2.7800
FGP20N60UFDTU
DISTI # 33610389
ON SemiconductorN-CH 600VV 20A FS PLANAR IGBT394
  • 5:$1.3907
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.6900
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 226
Container: Bulk
Americas - 0
  • 2260:$1.2900
  • 226:$1.3900
  • 452:$1.3900
  • 678:$1.3900
  • 1130:$1.3900
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube
Asia - 0
  • 40000:$1.6393
  • 20000:$1.6667
  • 8000:$1.7241
  • 4000:$1.7857
  • 2400:$1.8519
  • 1600:$1.9231
  • 800:$2.0000
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 1600:$1.1900
  • 3200:$1.1900
  • 4800:$1.1900
  • 8000:$1.1900
  • 800:$1.2900
FGP20N60UFDTU
DISTI # 46AC0816
ON SemiconductorIGBT, 600V, 40A, TO-220-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:165W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-220,No. of Pins:3Pins,Operating RoHS Compliant: Yes2325
  • 5000:$1.5300
  • 2500:$1.5700
  • 1000:$1.8800
  • 500:$2.0700
  • 100:$2.2100
  • 10:$2.7100
  • 1:$3.1400
FGP20N60UFDTU
DISTI # 512-FGP20N60UFDTU
ON SemiconductorIGBT Transistors 600V, 20A Field Stop
RoHS: Compliant
1203
  • 1:$2.6400
  • 10:$2.2500
  • 100:$1.9500
  • 250:$1.8500
  • 500:$1.6600
  • 1000:$1.4000
  • 2500:$1.3300
  • 5000:$1.2800
FGP20N60UFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant
16
  • 1000:$1.4600
  • 500:$1.5400
  • 100:$1.6000
  • 25:$1.6700
  • 1:$1.8000
FGP20N60UFDTUFreescale Semiconductor*** FREE SHIPPING ORDERS OVER $100 *** 40A, 600V, N-CHANNEL IGBT, TO-220AB520
  • 516:$1.7325
  • 120:$1.9425
  • 1:$3.1500
FGP20N60UFDTU
DISTI # 8648896P
ON SemiconductorIGBT 600V 20A FIELD STOP TO220, TU1230
  • 800:£1.2540
  • 400:£1.3900
  • 200:£1.4700
  • 50:£1.6840
FGP20N60UFDTU
DISTI # 8648896
ON SemiconductorIGBT 600V 20A FIELD STOP TO220, PK155
  • 800:£1.2540
  • 400:£1.3900
  • 200:£1.4700
  • 50:£1.6840
  • 5:£1.9900
FGP20N60UFDTU
DISTI # 2825137
ON SemiconductorIGBT, 600V, 40A, TO-220-3
RoHS: Compliant
2325
  • 1000:$2.0300
  • 500:$2.2500
  • 250:$2.5600
  • 100:$2.8500
  • 10:$3.2900
  • 1:$3.7700
FGP20N60UFDTU
DISTI # 2825137
ON SemiconductorIGBT, 600V, 40A, TO-220-32325
  • 500:£1.2200
  • 250:£1.3600
  • 100:£1.4300
  • 10:£1.6400
  • 1:£2.1900
Immagine Parte # Descrizione
MCP6561T-E/OT

Mfr.#: MCP6561T-E/OT

OMO.#: OMO-MCP6561T-E-OT

Analog Comparators Singl 1.8V Push/Pull Comparator, E temp
IRS2184SPBF

Mfr.#: IRS2184SPBF

OMO.#: OMO-IRS2184SPBF

Gate Drivers 3-Phase Bridge DRVR 600V 10V to 20V
IR1155STRPBF

Mfr.#: IR1155STRPBF

OMO.#: OMO-IR1155STRPBF

Power Factor Correction - PFC Prog FREQ 1 CYCLE Cntrl PFC IC
FDN337N

Mfr.#: FDN337N

OMO.#: OMO-FDN337N

MOSFET SSOT-3 N-CH 30V
VIPER17HD

Mfr.#: VIPER17HD

OMO.#: OMO-VIPER17HD

AC/DC Converters Off-Line High Volt Converter
FFSP2065A

Mfr.#: FFSP2065A

OMO.#: OMO-FFSP2065A

Schottky Diodes & Rectifiers SIC TO220 SBD 20A 650V
RLP73N3AR075JTE

Mfr.#: RLP73N3AR075JTE

OMO.#: OMO-RLP73N3AR075JTE

Current Sense Resistors - SMD RLP73N 3A R075 5% 2K RL
0679H0750-01

Mfr.#: 0679H0750-01

OMO.#: OMO-0679H0750-01

Surface Mount Fuses 750mA 350 VAC 72 VCD
IRS2184SPBF

Mfr.#: IRS2184SPBF

OMO.#: OMO-IRS2184SPBF-INFINEON-TECHNOLOGIES

Gate Drivers 3-Phase Bridge DRVR 600V 10V to 20V
IR1155STRPBF

Mfr.#: IR1155STRPBF

OMO.#: OMO-IR1155STRPBF-INFINEON-TECHNOLOGIES

Power Factor Correction - PFC Prog FREQ 1 CYCLE Cntrl PFC IC
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di FGP20N60UFDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,64 USD
2,64 USD
10
2,25 USD
22,50 USD
100
1,95 USD
195,00 USD
250
1,85 USD
462,50 USD
500
1,66 USD
830,00 USD
1000
1,40 USD
1 400,00 USD
2500
1,33 USD
3 325,00 USD
5000
1,28 USD
6 400,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • Compare FGP20N60UFDTU
    FGP20N60UFD vs FGP20N60UFDFGP20N60UFDT vs FGP20N60UFDTU
  • FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
Top