OMO ElectronicOMO Electronic
Expand menu
0 Carrello

AS4C512M8D3LB-12BINTR

AS4C512M8D3LB-12BINTR
Mfr. #:
AS4C512M8D3LB-12BINTR
Produttore:
Alliance Memory
Descrizione:
DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C512M8D3LB-12BINTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C512M8D3LB-12BINTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM - DDR3L
Larghezza bus dati:
8 bit
Organizzazione:
512 M x 8
Pacchetto/custodia:
FBGA-78
Dimensione della memoria:
4 Gbit
Frequenza massima di clock:
800 MHz
Tensione di alimentazione - Max:
1.45 V
Tensione di alimentazione - Min:
1.283 V
Corrente di alimentazione - Max:
160 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 95 C
Serie:
AS4C512M8D3LB-12
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
sì
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
2500
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C512M8D3LB-12, AS4C512M8D3LB, AS4C512M8D3L, AS4C512M8, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    BY

    The denominations seem to coincide, the quantity and quality did not check. I ordered from the seller two sets in different orders, which he combined into one, which was good to track and receive. I recommend to everyone!!!

    2019-04-04
    S***o
    S***o
    ES

    Perfecto

    2019-09-25
    A***r
    A***r
    LT

    ok

    2019-09-19
    B***t
    B***t
    TR

    Guzel I dare eder

    2019-04-29
***et
DRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R
***i-Key
IC DRAM 4G PARALLEL 78FBGA
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
Parte # Mfg. Descrizione Azione Prezzo
AS4C512M8D3LB-12BINTR
DISTI # AS4C512M8D3LB-12BINTR-ND		Alliance Memory IncIC DRAM 4G PARALLEL 78FBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$8.1440
AS4C512M8D3LB-12BINTR
DISTI # AS4C512M8D3LB-12BINTR		Alliance Memory IncDRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R - Tape and Reel (Alt: AS4C512M8D3LB-12BINTR)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$7.2900
  • 15000:$7.4900
  • 10000:$7.6900
  • 5000:$7.8900
  • 2500:$8.0900
AS4C512M8D3LB-12BIN
DISTI # 913-A4C5128D3LB12BIN		Alliance Memory IncDRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
RoHS: Compliant		430
  • 1:$12.2500
  • 10:$11.3500
  • 25:$11.0900
  • 50:$11.0300
  • 100:$9.7100
  • 250:$9.2300
  • 500:$9.0800
AS4C512M8D3LB-12BINTR
DISTI # 913-4C5128D3LB12BINT		Alliance Memory IncDRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
RoHS: Compliant		0
  • 2500:$8.5400
Immagine Parte # Descrizione
AS4C512M8D3LB-10BCN

Mfr.#: AS4C512M8D3LB-10BCN

OMO.#: OMO-AS4C512M8D3LB-10BCN

 DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Commercial (Extended) (0 95 C) 78-ball FBGA
AS4C512M8D3LB-10BIN

Mfr.#: AS4C512M8D3LB-10BIN

OMO.#: OMO-AS4C512M8D3LB-10BIN

 DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Industrial (-40 95 C) 78-ball FBGA
AS4C512M8D3L-12BAN

Mfr.#: AS4C512M8D3L-12BAN

OMO.#: OMO-AS4C512M8D3L-12BAN

 DRAM DDR3, 4GB. 1.35V 800MHz,512M x 8
AS4C512M8D3-12BINTR

Mfr.#: AS4C512M8D3-12BINTR

OMO.#: OMO-AS4C512M8D3-12BINTR-ALLIANCE-MEMORY

 DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
AS4C512M8D3L-12BCNTR

Mfr.#: AS4C512M8D3L-12BCNTR

OMO.#: OMO-AS4C512M8D3L-12BCNTR-ALLIANCE-MEMORY

 DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
AS4C512M8D3-12BAN

Mfr.#: AS4C512M8D3-12BAN

OMO.#: OMO-AS4C512M8D3-12BAN-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
AS4C512M8D3-12BCN

Mfr.#: AS4C512M8D3-12BCN

OMO.#: OMO-AS4C512M8D3-12BCN-ALLIANCE-MEMORY

 DRAM 4G, 1.5V, 1600Mhz 512M x 8 DDR3
AS4C512M8D3L-12BIN

Mfr.#: AS4C512M8D3L-12BIN

OMO.#: OMO-AS4C512M8D3L-12BIN-ALLIANCE-MEMORY

 DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
AS4C512M8D3LA-12BAN

Mfr.#: AS4C512M8D3LA-12BAN

OMO.#: OMO-AS4C512M8D3LA-12BAN-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
AS4C512M8D3LA-12BINTR

Mfr.#: AS4C512M8D3LA-12BINTR

OMO.#: OMO-AS4C512M8D3LA-12BINTR-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di AS4C512M8D3LB-12BINTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Iniziare con
Prodotti più recenti
More Newest Products
Top