FP25R12U1T4

Mfr. #:: FP25R12U1T4
Produttore:: Infineon Technologies
Descrizione:: IGBT Modules IGBT Module 25A 1200V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FP25R12U1T4 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: FP25R12U1T4 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: Moduli IGBT

RoHS:: Y

Prodotto:: Moduli di silicio IGBT

Configurazione:: PIM 3-Phase Input Rectifier

Tensione collettore-emettitore VCEO Max:: 1200 V

Tensione di saturazione collettore-emettitore:: 1.85 V

Corrente continua del collettore a 25 C:: 39 A

Corrente di dispersione gate-emettitore:: 400 nA

Pd - Dissipazione di potenza:: 190 W

Pacchetto/custodia:: SmartPIM1

Temperatura di esercizio minima:: - 40 C

Temperatura massima di esercizio:: + 150 C

Confezione:: Vassoio

Serie:: IGBT4

Marca:: Tecnologie Infineon

Stile di montaggio:: Montaggio su telaio

Tensione massima dell'emettitore di gate:: 20 V

Tipologia di prodotto:: Moduli IGBT

Quantità confezione di fabbrica:: 30

sottocategoria:: IGBT

Nome depositato:: TRENCHSTOP

Parte # Alias:: FP25R12U1T4BPSA1 SP000663674

Unità di peso:: 1.199315 oz

Tags: FP25R, FP25, FP2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FP25R12U1T4 Descrizione

***et Europe: Trans IGBT Module N-CH 1.2KV 39A 23-pin SMART1-1

***ment14 APAC: IGBT, LOW POW NTC, 1200V, 25A, PIM; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:190W

***ineon: 1200V SmartPIM 1 IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; T(vj oi) = 150C; Low V(cesat); AI(2)O(3) Substrate for Low Thermal Resistance; Rugged Duplex frame construction; Self-acting PressFIT Assembly | Benefits: Safe and simple mounting process; Reduced assembly time; Reliable connection of module Pins and PCB; Flexible mounting possibilities | Target Applications: drives; aircon

FP25R12U1T4 Maggiori informazioni

Infineon SmartPIM & SmartPACK IGBTs: Infineon's SmartPIM & SmartPACK IGBTs are designed to fulfill the challenges for the inverter assembly and the reliability of the whole system. These devices come with a sophisticated mounting concept and combines the existing PressFIT contact with a very basic mounting and assembly technology of an inverter. The brand-new housing allows connecting the module with the heat sink and the PCB in a single step mounting process. In the Smart1 this easy mounting concept is realized by using one screw only. During this mounting process, the PressFIT pin is pressed into the PCB, the PCB is stabilized and the module is mounted in the same step on the surface of the heat sink. The whole mounting concept needs no additional tools; only an electrical screw driver is used. All well known electrical circuits are feasible. The possible current range in the housing reaches up to 75A.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FP25R12U1T4BPSA1 DISTI # FP25R12U1T4BPSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 40A RoHS: Not compliant Min Qty: 30 Container: Bulk	Temporarily Out of Stock	30:$70.8847
FP25R12U1T4 DISTI # FP25R12U1T4	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 39A 23-pin SMART1-1 (Alt: FP25R12U1T4) RoHS: Compliant Min Qty: 30	Asia - 0
FP25R12U1T4 DISTI # SP000663674	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 39A 23-pin SMART1-1 (Alt: SP000663674) RoHS: Compliant Min Qty: 1	Europe - 0	1:€84.9900 10:€68.6900 25:€62.4900 50:€60.2900 100:€58.3900 500:€56.6900 1000:€55.3900
FP25R12U1T4BPSA1 DISTI # FP25R12U1T4BPSA1	Infineon Technologies AG	LOW POWER SMART - Trays (Alt: FP25R12U1T4BPSA1) RoHS: Compliant Min Qty: 30 Container: Tray	Americas - 0	30:$67.5900 60:$65.1900 120:$62.7900 180:$60.6900 300:$59.5900
FP25R12U1T4 DISTI # 641-FP25R12U1T4	Infineon Technologies AG	IGBT Modules IGBT Module 25A 1200V RoHS: Compliant	7	1:$75.1300 5:$73.7500 10:$71.8400 25:$70.4400 50:$70.4300 100:$65.2700

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Disponibilità

Azione:: Available
Su ordine:: 3000
Inserisci la quantità:

Il prezzo attuale di FP25R12U1T4 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~75,13 USD~~; ~~75,13 USD~~

5: ~~73,75 USD~~; ~~368,75 USD~~

10: ~~71,84 USD~~; ~~718,40 USD~~

25: ~~70,44 USD~~; ~~1 761,00 USD~~

50: ~~70,43 USD~~; ~~3 521,50 USD~~

100: ~~65,27 USD~~; ~~6 527,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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FP25R12U1T4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes