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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB052N04NGATMA1 DISTI # IPB052N04NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 70A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB052N04NGATMA1 DISTI # IPB052N04NGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 70A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB052N04NGATMA1 DISTI # IPB052N04NGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 70A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB052N04N G DISTI # 726-IPB052N04NG | Infineon Technologies AG | MOSFET N-Ch 40V 70A D2PAK-2 RoHS: Compliant | 870 |
|
| IPB052N04NG | Infineon Technologies AG | Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1989 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB052N04N OMO.#: OMO-IPB052N04N-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB052N04NG OMO.#: OMO-IPB052N04NG-1190 |
Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB052N04NGATMA1 |
MOSFET N-CH 40V 70A TO263-3 |
|
|
Mfr.#: IPB052N04N G OMO.#: OMO-IPB052N04N-G-126 |
IGBT Transistors MOSFET N-Ch 40V 70A D2PAK-2 |