APT30GP60JDQ1

Mfr. #:: APT30GP60JDQ1
Produttore:: Microchip / Microsemi
Descrizione:: IGBT Modules FG, IGBT-COMBI, 600V, 30A, SOT-227
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: APT30GP60JDQ1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: APT30GP60JDQ1 Datasheet APT30GP60JDQ1 Datasheet (P4-P6)APT30GP60JDQ1 Datasheet (P7-P9)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Microchip

Categoria di prodotto:: Moduli IGBT

RoHS:: Y

Prodotto:: Moduli di silicio IGBT

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 600 V

Tensione di saturazione collettore-emettitore:: 2.2 V

Corrente continua del collettore a 25 C:: 67 A

Corrente di dispersione gate-emettitore:: 100 nA

Pd - Dissipazione di potenza:: 245 W

Pacchetto/custodia:: ISOTOP-4

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Confezione:: Tubo

Marca:: Microchip / Microsemi

Stile di montaggio:: SMD/SMT

Tensione massima dell'emettitore di gate:: 20 V

Tipologia di prodotto:: Moduli IGBT

Quantità confezione di fabbrica:: 1

sottocategoria:: IGBT

Tags: APT30GP, APT30G, APT30, APT3, APT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT30GP60JDQ1 Descrizione

***et: IGBT Module N-Channel 600V 67A 20V SOT-227 Screw Mount

***i-Key: IGBT MODULE 600V 67A 245W ISOTOP

***ark: IGBT PT MOS 7 COMBI 600 V 40 A ISOTOP 4 SOT-227 TUBE ROHS COMPLIANT: YES

***et: Trans IGBT Chip N-CH 600V 86A 4-Pin SOT-227

*** Stop Electro: Insulated Gate Bipolar Transistor, 86A I(C), 600V V(BR)CES, N-Channel

***el Electronic: IGBT MODULE 600V 86A 284W ISOTOP

***ow.cn: Trans IGBT Module N-CH 600V 86A 284000mW

***ure Electronics: APT150GN60J Series 600 V 220 A Trench and Field Stop IGBT - SOT-227

***rochip: IGBT Fieldstop Low Frequency Single 600 V 150 A SOT-227

***et: Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227

*** Stop Electro: Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel

***el Electronic: IGBT MOD 600V 220A 536W ISOTOP

***th Star Micro: Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ

***ure Electronics: APT150GN60JDQ Series 600 V 220 A Trench and Field Stop IGBT - SOT-227

***rochip: IGBT Fieldstop Low Frequency Combi 600 V 150 A SOT-227

***et: Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227

***icontronic: Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel

***el Electronic: IGBT MOD 600V 220A 536W ISOTOP

***th Star Micro: Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ

***DA Technology Co., Ltd.: Product Description Demo for Development.

*** Electronics: IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

***i-Key: IGBT MOD 600V 280A 940W SOT227B

***ource: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***el Electronic: Trans IGBT Chip N-CH 600V 96A 4-Pin SOT-227 Rail

***et: PWR IGBT 39A,600V,SMPS N-CH W/DIODE TO-227

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Trans IGBT Chip N-CH 900V 115A 500000mW 4-Pin SOT-227B

***el Electronic: IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode

***i-Key: IGBT MOD 900V 115A 500W SOT227B

***ure Electronics: 900V, 70a, 2.7Vce, SOT-227B, miniBLOC

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 115 / Collector-Emitter Voltage (Vceo) V = 900 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 500 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
APT30GP60JDQ1 DISTI # APT30GP60JDQ1-ND	Microsemi Corporation	IGBT 600V 67A 245W SOT227 RoHS: Compliant Min Qty: 19 Container: Tube	Limited Supply - Call	19:$25.7763
APT30GP60JDQ1 DISTI # APT30GP60JDQ1	Microchip Technology Inc	IGBT Module N-Channel 600V 67A 20V SOT-227 Screw Mount - Rail/Tube (Alt: APT30GP60JDQ1) RoHS: Compliant Min Qty: 19 Container: Tube	Americas - 0	190:$17.2900 95:$17.5900 57:$18.0900 38:$18.6900 19:$19.3900
APT30GP60JDQ1 DISTI # 494-APT30GP60JDQ1	Microchip Technology Inc	IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi RoHS: Compliant	0

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: APT30GT60BRG OMO.#: OMO-APT30GT60BRG	IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
	Mfr.#: APT30GT60BRDQ2G OMO.#: OMO-APT30GT60BRDQ2G	IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
	Mfr.#: APT30GP60B2DLG OMO.#: OMO-APT30GP60B2DLG	IGBT Transistors Insulated Gate Bipolar Transistor - Resonant Mode - Combi
	Mfr.#: APT30GF60JU3 OMO.#: OMO-APT30GF60JU3	IGBT Modules Power Module - IGBT
	Mfr.#: APT30GF60JU3 OMO.#: OMO-APT30GF60JU3-MICROSEMI	IGBT Modules
	Mfr.#: APT30GP60BC OMO.#: OMO-APT30GP60BC-1190	Nuovo e originale
	Mfr.#: APT30GP60BDQ2 OMO.#: OMO-APT30GP60BDQ2-1190	Nuovo e originale
	Mfr.#: APT30GP60BSC OMO.#: OMO-APT30GP60BSC-1190	Nuovo e originale
	Mfr.#: APT30GP60JDF1 OMO.#: OMO-APT30GP60JDF1-1190	Nuovo e originale
	Mfr.#: APT30GT60BRD2G OMO.#: OMO-APT30GT60BRD2G-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3500
Inserisci la quantità:

Il prezzo attuale di APT30GP60JDQ1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

19: ~~25,27 USD~~; ~~480,13 USD~~

25: ~~23,22 USD~~; ~~580,50 USD~~

50: ~~22,52 USD~~; ~~1 126,00 USD~~

100: ~~21,45 USD~~; ~~2 145,00 USD~~

250: ~~19,71 USD~~; ~~4 927,50 USD~~

500: ~~18,16 USD~~; ~~9 080,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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APT30GP60JDQ1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes