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IXFH80N65X2

IXFH80N65X2
Mfr. #:
IXFH80N65X2
Produttore:
Littelfuse
Descrizione:
MOSFET MOSFET 650V/80A Ultra Junction X2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH80N65X2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH80N65X2 DatasheetIXFH80N65X2 Datasheet (P4-P5)
ECAD Model:
Maggiori informazioni:
IXFH80N65X2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
80 A
Rds On - Resistenza Drain-Source:
40 mOhms
Vgs th - Tensione di soglia gate-source:
2.7 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
143 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
890 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
650V Ultra Junction X2
Marca:
IXYS
Transconduttanza diretta - Min:
36 S
Tempo di caduta:
11 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
42 ns
Quantità confezione di fabbrica:
30
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
60 ns
Tempo di ritardo di accensione tipico:
40 ns
Unità di peso:
0.056438 oz
Tags
IXFH80N6, IXFH80, IXFH8, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXYS IXFH80N65X2
***ark
Mosfet, N Channel, 650V, 80A, To-247 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-247
***i-Key
MOSFET N-CH 650V 80A TO-247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 80A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:890W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 650V, 80A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.038ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:890W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HiPerFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descrizione Azione Prezzo
IXFH80N65X2
DISTI # C1S331700121901		IXYS CorporationMOSFETs60
  • 50:$10.1000
  • 10:$11.0000
  • 5:$13.4000
  • 1:$15.0000
IXFH80N65X2
DISTI # IXFH80N65X2-ND		IXYS CorporationMOSFET N-CH 650V 80A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		3006In Stock
  • 510:$7.5702
  • 120:$9.0354
  • 30:$10.0123
  • 1:$12.2100
IXFH80N65X2-4
DISTI # IXFH80N65X2-4-ND		IXYS CorporationMOSFET N-CH
RoHS: Not compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$11.1847
IXFH80N65X2
DISTI # 31264563		IXYS CorporationTrans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-24760
  • 2:$5.9396
IXFH80N65X2
DISTI # 02AC9803		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes19
  • 1:$12.7600
  • 10:$11.4900
  • 25:$9.5600
  • 50:$8.8800
  • 100:$8.6800
  • 250:$7.9300
  • 500:$7.2300
IXFH80N65X2
DISTI # 747-IXFH80N65X2		IXYS CorporationMOSFET MOSFET 650V/80A Ultra Junction X2
RoHS: Compliant		382
  • 1:$12.7600
  • 10:$11.4900
  • 25:$9.5600
  • 50:$8.8800
  • 100:$8.6800
  • 250:$7.9300
  • 500:$7.2300
  • 1000:$6.8900
IXFH80N65X2
DISTI # 1464236		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU90
  • 30:£7.0470
  • 120:£6.7120
  • 300:£6.4060
  • 600:£5.7920
  • 900:£5.3290
IXFH80N65X2
DISTI # 9171439P		IXYS CorporationN-CH X2 SERIES MOSFET 650V 80A TO-247, TU13
  • 5:£8.6900
  • 10:£8.4600
  • 30:£8.2400
  • 90:£8.0400
IXFH80N65X2
DISTI # 2674750		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		19
  • 1:£10.5800
  • 5:£10.0500
  • 10:£7.5300
  • 50:£6.9900
  • 100:£6.8300
IXFH80N65X2
DISTI # 2674750		IXYS CorporationMOSFET, N-CH, 650V, 80A, TO-247
RoHS: Compliant		19
  • 1:$15.0400
  • 10:$14.0600
  • 100:$12.4400
  • 500:$11.7600
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Disponibilità
Azione:
362
Su ordine:
2345
Inserisci la quantità:
Il prezzo attuale di IXFH80N65X2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
11,10 USD
11,10 USD
10
10,10 USD
101,00 USD
25
9,10 USD
227,50 USD
50
8,88 USD
444,00 USD
100
8,21 USD
821,00 USD
250
7,93 USD
1 982,50 USD
500
6,88 USD
3 440,00 USD
1000
6,39 USD
6 390,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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