GS81302TT19GE-333I

GS81302TT19GE-333I
Mfr. #:
GS81302TT19GE-333I
Produttore:
GSI Technology
Descrizione:
SRAM 1.8 or 1.5V 8M x 18 144M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS81302TT19GE-333I Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS81302TT19GE-333I maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
144 Mbit
Organizzazione:
8 M x 18
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
1.9 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
765 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
DDR-II
Serie:
GS81302TT19GE
Tipo:
SigmaDDR-II+ B2
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
10
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SigmaDDR-II+
Tags
GS81302TT19GE-3, GS81302TT19G, GS81302TT19, GS81302TT1, GS81302TT, GS81302T, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Single 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Immagine Parte # Descrizione
GS81302TT38E-500I

Mfr.#: GS81302TT38E-500I

OMO.#: OMO-GS81302TT38E-500I

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT38GE-350I

Mfr.#: GS81302TT38GE-350I

OMO.#: OMO-GS81302TT38GE-350I

SRAM 1.8 or 1.5V 4M x 36 144M
GS81302TT10GE-450I

Mfr.#: GS81302TT10GE-450I

OMO.#: OMO-GS81302TT10GE-450I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302TT07GE-450I

Mfr.#: GS81302TT07GE-450I

OMO.#: OMO-GS81302TT07GE-450I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302TT20GE-400

Mfr.#: GS81302TT20GE-400

OMO.#: OMO-GS81302TT20GE-400

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302TT10GE-333I

Mfr.#: GS81302TT10GE-333I

OMO.#: OMO-GS81302TT10GE-333I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302TT11E-400I

Mfr.#: GS81302TT11E-400I

OMO.#: OMO-GS81302TT11E-400I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302TT19E-400I

Mfr.#: GS81302TT19E-400I

OMO.#: OMO-GS81302TT19E-400I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302TT19E-450I

Mfr.#: GS81302TT19E-450I

OMO.#: OMO-GS81302TT19E-450I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302TT11E-500

Mfr.#: GS81302TT11E-500

OMO.#: OMO-GS81302TT11E-500

SRAM 1.8 or 1.5V 16M x 9 144M
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS81302TT19GE-333I è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
10
150,38 USD
1 503,80 USD
30
139,64 USD
4 189,20 USD
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