FJV3113RMTF

FJV3113RMTF
Mfr. #:
FJV3113RMTF
Produttore:
ON Semiconductor / Fairchild
Descrizione:
Bipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FJV3113RMTF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Separare
Polarità del transistor:
NPN
Resistenza di ingresso tipica:
2.2 kOhms
Rapporto resistore tipico:
0.047
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Guadagno base/collettore DC hfe min:
68
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
0.1 A
Corrente di picco del collettore CC:
100 mA
Pd - Dissipazione di potenza:
200 mW
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FJV3113R
Confezione:
Bobina
Guadagno di corrente CC hFE Max:
68
Emettitore-tensione di base VEBO:
10 V
Altezza:
0.93 mm
Lunghezza:
2.92 mm
Tipo:
Transistor epitassiale al silicio NPN
Larghezza:
1.3 mm
Marca:
ON Semiconductor / Fairchild
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000282 oz
Tags
FJV3113, FJV311, FJV31, FJV3, FJV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***emi
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***ment14 APAC
TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***nell
TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47ko
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***ark
Pre-Biased "digital" Transistor,50V V(Br)Ceo,100Ma I(C),sot-23 Rohs Compliant: Yes
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***th Star Micro
NPN Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22KW, R2=22KW) Complement to FJV4103R
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***ure Electronics
DDTC114YCA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
*** Source Electronics
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ark
Rf Transistor, Npn, 50V, 0.1A, Sot-23 Rohs Compliant: Yes
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
DDTC Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3
***ical
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R
***ure Electronics
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***(Formerly Allied Electronics)
NPN Pre-Biased Signal Transistor SOT-23
Parte # Mfg. Descrizione Azione Prezzo
FJV3113RMTF
DISTI # V72:2272_06301063
ON SemiconductorNPN EPITAXIAL SILICON TRANSIST5207
  • 3000:$0.0292
  • 1000:$0.0383
  • 500:$0.0578
  • 250:$0.0583
  • 100:$0.0590
  • 25:$0.1695
  • 10:$0.1712
  • 1:$0.1900
FJV3113RMTF
DISTI # FJV3113RMTFCT-ND
ON SemiconductorTRANS PREBIAS NPN 200MW SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FJV3113RMTF
    DISTI # FJV3113RMTFDKR-ND
    ON SemiconductorTRANS PREBIAS NPN 200MW SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FJV3113RMTF
      DISTI # FJV3113RMTFTR-ND
      ON SemiconductorTRANS PREBIAS NPN 200MW SOT23-3
      RoHS: Compliant
      Min Qty: 12000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 12000:$0.0296
      FJV3113RMTF
      DISTI # 27000797
      ON SemiconductorNPN EPITAXIAL SILICON TRANSIST180000
      • 99000:$0.0179
      • 45000:$0.0196
      • 24000:$0.0221
      • 9000:$0.0246
      • 3000:$0.0280
      FJV3113RMTF
      DISTI # 29056917
      ON SemiconductorNPN EPITAXIAL SILICON TRANSIST5207
      • 3000:$0.0292
      • 1000:$0.0383
      • 500:$0.0578
      • 355:$0.0583
      FJV3113RMTF
      DISTI # FJV3113RMTF
      ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: FJV3113RMTF)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.0184
      • 6000:$0.0183
      • 12000:$0.0181
      • 18000:$0.0179
      • 30000:$0.0174
      FJV3113RMTF
      DISTI # 82C2953
      ON SemiconductorPre-Biased "Digital" Transistor,50V V(BR)CEO,100mA I(C),SOT-23 RoHS Compliant: Yes0
      • 1:$0.0350
      • 9000:$0.0310
      • 24000:$0.0280
      • 45000:$0.0260
      • 99000:$0.0220
      FJV3113RMTF
      DISTI # 512-FJV3113RMTF
      ON SemiconductorBipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K
      RoHS: Compliant
      36579
      • 1:$0.2000
      • 10:$0.1820
      • 100:$0.0640
      • 1000:$0.0430
      • 3000:$0.0330
      • 9000:$0.0290
      • 24000:$0.0260
      • 45000:$0.0230
      • 99000:$0.0190
      FJV3113RMTF_Q
      DISTI # 512-FJV3113RMTF_Q
      ON SemiconductorBipolar Transistors - Pre-Biased 50V/100mA/2.2K 47K
      RoHS: Not compliant
      0
        FJV3113RMTFFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
        RoHS: Compliant
        60000
        • 1:$0.0300
        • 25:$0.0300
        • 100:$0.0300
        • 500:$0.0300
        • 1000:$0.0300
        FJV3113RMTF
        DISTI # 8070947P
        ON SemiconductorTRANSISTORFAIRCHILDFJV3113RMTF, RL14600
        • 2000:£0.0290
        • 5000:£0.0270
        FJV3113RMTF
        DISTI # C1S541901550622
        ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
        RoHS: Compliant
        5207
        • 250:$0.0534
        • 100:$0.0593
        Immagine Parte # Descrizione
        AQ24CANFD-02HTG

        Mfr.#: AQ24CANFD-02HTG

        OMO.#: OMO-AQ24CANFD-02HTG

        TVS Diodes / ESD Suppressors 210W TVS Diode Array SOT23-3
        DTD143ECHZGT116

        Mfr.#: DTD143ECHZGT116

        OMO.#: OMO-DTD143ECHZGT116

        Bipolar Transistors - Pre-Biased NPN SOT-23 4.7kO Input Resist
        UA78M33CDCYR

        Mfr.#: UA78M33CDCYR

        OMO.#: OMO-UA78M33CDCYR

        Linear Voltage Regulators 3.3V 500mA Fixd Pos
        CRCW0603330RFKEAC

        Mfr.#: CRCW0603330RFKEAC

        OMO.#: OMO-CRCW0603330RFKEAC

        Thick Film Resistors - SMD 1/10Watt 330ohms 1% Commercial Use
        VEMD5510C

        Mfr.#: VEMD5510C

        OMO.#: OMO-VEMD5510C

        Photodiodes 550nm 0.6uA 440-700nm 80pF
        DTD143ECHZGT116

        Mfr.#: DTD143ECHZGT116

        OMO.#: OMO-DTD143ECHZGT116-ROHM-SEMI

        500MA/50V DIGITAL TRANSISTOR (WI
        AQ24CANFD-02HTG

        Mfr.#: AQ24CANFD-02HTG

        OMO.#: OMO-AQ24CANFD-02HTG-LITTELFUSE

        ESD Suppressors / TVS Diodes 210W TVS Diode Array SOT23-3
        CRCW0603330RFKEAC

        Mfr.#: CRCW0603330RFKEAC

        OMO.#: OMO-CRCW0603330RFKEAC-VISHAY-DALE

        D11/CRCW0603-C 100 330R 1% ET1
        43025-0410

        Mfr.#: 43025-0410

        OMO.#: OMO-43025-0410-1190

        Headers & Wire Housings MicroFit Rec Hsg DR 4Ckt GW
        ERJ2RKD4703X

        Mfr.#: ERJ2RKD4703X

        OMO.#: OMO-ERJ2RKD4703X-433

        Res Thick Film 0402 470K Ohm 0.5% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
        Disponibilità
        Azione:
        33
        Su ordine:
        2016
        Inserisci la quantità:
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