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IPD180N10N

IPD180N10N
Mfr. #:
IPD180N10N
Produttore:
Infineon Technologies
Descrizione:
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD180N10N Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnologia
si
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TO252-3
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
71W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
1800pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
43A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
Gate-Carica-Qg-Vgs
25nC @ 10V
Pd-Power-Dissipazione
71 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5 ns
Ora di alzarsi
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
43 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
18 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
19 ns
Tempo di ritardo all'accensione tipico
12 ns
Modalità canale
Aumento
Tags
IPD18, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
IPD180N10N3GATMA1
DISTI # V72:2272_09156944		Infineon Technologies AGMV POWER MOS1850
  • 1000:$0.4258
  • 500:$0.5137
  • 250:$0.5657
  • 100:$0.5675
  • 25:$0.6906
  • 10:$0.6937
  • 1:$0.7809
IPD180N10N3GATMA1
DISTI # IPD180N10N3GATMA1TR-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4813
IPD180N10N3GBTMA1
DISTI # IPD180N10N3GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD180N10N3GBTMA1
    DISTI # IPD180N10N3GBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD180N10N3GBTMA1
      DISTI # IPD180N10N3GBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1CT-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1DKR-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # 26196098        		Infineon Technologies AGMV POWER MOS1850
        • 21:$0.7816
        IPD180N10N3 G
        DISTI # IPD180N10N3 G        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin TO-252 T/R (Alt: IPD180N10N3 G)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Asia - 12500
        • 2500:$0.4992
        • 5000:$0.4787
        • 7500:$0.4722
        • 12500:$0.4538
        • 25000:$0.4480
        • 62500:$0.4368
        • 125000:$0.4261
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1        		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GBTMA1
        DISTI # IPD180N10N3GBTMA1        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GATMA1
        DISTI # 47Y8049        		Infineon Technologies AGMOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V , RoHS Compliant: Yes0
          IPD180N10N3GATMA1
          DISTI # 726-IPD180N10N3GATMA          		Infineon Technologies AGMOSFET MV POWER MOS
          RoHS: Compliant          		251
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          IPD180N10N3GBTMA1
          DISTI # 726-IPD180N10N3GBTMA          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3 G
          DISTI # 726-IPD180N10N3G          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3GInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		116
          • 1000:$0.4600
          • 500:$0.4800
          • 100:$0.5000
          • 25:$0.5200
          • 1:$0.5600
          IPD180N10N3GBTMA1Infineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		166
          • 1000:$0.4400
          • 500:$0.4600
          • 100:$0.4800
          • 25:$0.5000
          • 1:$0.5400
          IPD180N10N3GInfineon Technologies AGINSTOCK622
            IPD180N10N3GATMA1
            DISTI # 2443433            		Infineon Technologies AGMOSFET, N CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.6300
            • 10:$1.3900
            • 100:$1.0700
            • 500:$0.9400
            • 1000:$0.7430
            • 2500:$0.6670
            IPD180N10N3GBTMA1
            DISTI # 2617464            		Infineon Technologies AGMOSFET, N-CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.4900
            • 10:$1.2300
            • 100:$0.9930
            • 250:$0.8880
            • 500:$0.7870
            • 1000:$0.7320
            Immagine Parte # Descrizione
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1

            		 MOSFET MV POWER MOS
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V 43A TO252-3
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES

            		 MV POWER MOS
            IPD180N10N3GATMA1-CUT TAPE

            Mfr.#: IPD180N10N3GATMA1-CUT TAPE

            OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190

            		 Nuovo e originale
            IPD180N10N

            Mfr.#: IPD180N10N

            OMO.#: OMO-IPD180N10N-1190

            		 Nuovo e originale
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G-1190

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GATMA1 , 2SD2

            Mfr.#: IPD180N10N3GATMA1 , 2SD2

            OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190

            		 Nuovo e originale
            IPD180N10N3G

            Mfr.#: IPD180N10N3G

            OMO.#: OMO-IPD180N10N3G-124

            		 Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            Disponibilità
            Azione:
            Available
            Su ordine:
            4500
            Inserisci la quantità:
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