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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIR402DP-T1-GE3 DISTI # V36:1790_09215727 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO EP T/R RoHS: Compliant | 0 |
|
| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 35A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 66In Stock |
|
| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 35A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 66In Stock |
|
| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 35A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR402DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIR402DP-T1-GE3 DISTI # SIR402DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO T/R (Alt: SIR402DP-T1-GE3) Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SIR402DP-T1-GE3 DISTI # 16P3649 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 35A POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:20V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR402DP-T1-GE3 DISTI # 09P2630 | Vishay Intertechnologies | N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: YES RoHS: Compliant | 0 |
|
| SIR402DP-T1-GE3 DISTI # 781-SIR402DP-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 3536 |
|
| SIR402DP-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | Americas - | |
| SIR402DP-T1-GE3 | Vishay Intertechnologies | 2375 | ||
| SIR402DP-T1-GE3 | Vishay Siliconix | 2966 | ||
| SIR402DP-T1-GE3 | MOUSER ELECTRONICS | 640 |
| |
| SIR402DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
| Immagine | Parte # | Descrizione |
|---|---|---|
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Mfr.#: SIR540DP-T1-E3 OMO.#: OMO-SIR540DP-T1-E3-1190 |
Nuovo e originale |
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Mfr.#: SIR540DP-T1-GE3 OMO.#: OMO-SIR540DP-T1-GE3-1190 |
Nuovo e originale |