MR0A08BCYS35R

MR0A08BCYS35R
Mfr. #:
MR0A08BCYS35R
Produttore:
Everspin Technologies
Descrizione:
NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MR0A08BCYS35R Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MR0A08BCYS35R maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologie Everspin
Categoria di prodotto:
NVRAM
RoHS:
Y
Pacchetto/custodia:
TSOP-44
Tipo di interfaccia:
Parallelo
Dimensione della memoria:
1 Mbit
Organizzazione:
128 k x 8
Larghezza bus dati:
8 bit
Orario di accesso:
35 ns
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
3 V
Corrente di alimentazione operativa:
55 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Serie:
MR0A08B
Confezione:
Bobina
Marca:
Tecnologie Everspin
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
Tipologia di prodotto:
NVRAM
Quantità confezione di fabbrica:
1500
sottocategoria:
Memoria e archiviazione dati
Tags
MR0A08BC, MR0A0, MR0A, MR0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R
***i-Key
IC RAM 1MBIT PARALLEL 44TSOP2
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 
Parte # Mfg. Descrizione Azione Prezzo
MR0A08BCYS35R
DISTI # MR0A08BCYS35R-ND
Everspin TechnologiesIC RAM 1M PARALLEL 44TSOP2
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1500:$10.0016
MR0A08BCYS35R
DISTI # MR0A08BCYS35R
Everspin TechnologiesNVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR0A08BCYS35R)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel
Europe - 0
  • 1500:€10.9900
  • 3000:€10.4900
  • 6000:€10.0900
  • 9000:€9.3900
  • 15000:€8.7900
MR0A08BCYS35
DISTI # 936-MR0A08BCYS35
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
369
  • 1:$13.2700
  • 10:$12.2900
  • 25:$12.0100
  • 50:$11.9500
  • 100:$10.5200
  • 250:$10.0000
  • 500:$9.9000
MR0A08BCYS35R
DISTI # 936-MR0A08BCYS35R
Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant
0
  • 1:$13.6100
  • 10:$12.6100
  • 25:$12.3300
  • 50:$12.2600
  • 100:$10.7900
  • 250:$10.2600
  • 500:$10.1500
  • 1000:$10.0000
  • 1500:$9.5400
Immagine Parte # Descrizione
MR0A08BCMA35

Mfr.#: MR0A08BCMA35

OMO.#: OMO-MR0A08BCMA35

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BYS35R

Mfr.#: MR0A08BYS35R

OMO.#: OMO-MR0A08BYS35R

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCSO35R

Mfr.#: MR0A08BCSO35R

OMO.#: OMO-MR0A08BCSO35R

NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BSO35R

Mfr.#: MR0A08BSO35R

OMO.#: OMO-MR0A08BSO35R

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCSO35R

Mfr.#: MR0A08BCSO35R

OMO.#: OMO-MR0A08BCSO35R-EVERSPIN-TECHNOLOGIES

NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BCMA35

Mfr.#: MR0A08BCMA35

OMO.#: OMO-MR0A08BCMA35-EVERSPIN-TECHNOLOGIES

IC RAM 1M PARALLEL 48FBGA
MR0A08BMA35R

Mfr.#: MR0A08BMA35R

OMO.#: OMO-MR0A08BMA35R-EVERSPIN-TECHNOLOGIES

IC RAM 1M PARALLEL 48FBGA
MR0A08BCYS35

Mfr.#: MR0A08BCYS35

OMO.#: OMO-MR0A08BCYS35-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BMA35

Mfr.#: MR0A08BMA35

OMO.#: OMO-MR0A08BMA35-EVERSPIN-TECHNOLOGIES

IC RAM 1M PARALLEL 48FBGA
MR0A08BSO35

Mfr.#: MR0A08BSO35

OMO.#: OMO-MR0A08BSO35-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di MR0A08BCYS35R è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
13,61 USD
13,61 USD
10
12,61 USD
126,10 USD
25
12,33 USD
308,25 USD
50
12,26 USD
613,00 USD
100
10,79 USD
1 079,00 USD
250
10,26 USD
2 565,00 USD
500
10,15 USD
5 075,00 USD
1000
10,00 USD
10 000,00 USD
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