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PSMN3R9-60PSQ

PSMN3R9-60PSQ
Mfr. #:
PSMN3R9-60PSQ
Produttore:
Nexperia
Descrizione:
MOSFET N-channel 60 V 3.9 mo FET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PSMN3R9-60PSQ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PSMN3R9-60PSQ maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Nexperia
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
130 A
Rds On - Resistenza Drain-Source:
2.94 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
103 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
263 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Tipo di transistor:
1 N-Channel
Marca:
Nexperia
Tempo di caduta:
45 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
41.4 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
62.7 ns
Tempo di ritardo di accensione tipico:
25.3 ns
Unità di peso:
0.211644 oz
Tags
PSMN3R9-6, PSMN3R9, PSMN3, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 130 A, 60 V, 0.00294 Ohm, 10 V, 3 V Rohs Compliant: Yes
***peria
PSMN3R9-60PS - N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
***et
Trans MOSFET N-CH 60V 130A 3-Pin TO-220AB Rail
*** Source Electronics
MOSFET N-CH 60V SOT78
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 130A, SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00294ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 60V, 130A, SOT78; Polarità Transistor:Canale N; Corrente Continua di Drain Id:130A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.00294ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:263W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Parte # Mfg. Descrizione Azione Prezzo
PSMN3R9-60PSQ
DISTI # 1727-1133-ND		NexperiaMOSFET N-CH 60V SOT78
RoHS: Compliant
Min Qty: 1
Container: Tube		4986In Stock
  • 1000:$1.1221
  • 500:$1.3542
  • 100:$1.7412
  • 50:$1.9346
  • 1:$2.4000
PSMN3R9-60PSQ
DISTI # PSMN3R9-60PSQ		NexperiaPHSPSMN3R9-60PSQ - Rail/Tube (Alt: PSMN3R9-60PSQ)
RoHS: Compliant
Min Qty: 5000
Container: Tube		Americas - 0
  • 5000:$0.9249
  • 7000:$0.9129
  • 12000:$0.8899
  • 25000:$0.8679
  • 50000:$0.8469
PSMN3R9-60PSQ
DISTI # PSMN3R9-60PSQ		NexperiaPHSPSMN3R9-60PSQ (Alt: PSMN3R9-60PSQ)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 50:€1.0419
  • 100:€0.8679
  • 200:€0.8009
  • 300:€0.7439
  • 500:€0.6939
PSMN3R9-60PSQ
DISTI # 90W9538		NexperiaMOSFET Transistor, N Channel, 130 A, 60 V, 0.00294 ohm, 10 V, 3 V RoHS Compliant: Yes4783
  • 1:$1.7300
  • 10:$1.4700
  • 100:$1.1800
  • 500:$1.0900
  • 1000:$0.9770
  • 2500:$0.7930
  • 5000:$0.7680
PSMN3R9-60PSQ
DISTI # 771-PSMN3R9-60PSQ		NexperiaMOSFET N-channel 60 V 3.9 mo FET
RoHS: Compliant		0
  • 5000:$0.9150
PSMN3R9-60PSQ
DISTI # 2319896		NexperiaMOSFET, N-CH, 60V, 130A, SOT78
RoHS: Compliant		4783
  • 5:£2.0100
  • 25:£1.4400
  • 100:£1.3000
  • 250:£1.1600
  • 500:£1.0200
PSMN3R9-60PSQ
DISTI # 2319896		NexperiaMOSFET, N-CH, 60V, 130A, SOT78
RoHS: Compliant		4783
  • 1:$3.3200
  • 10:$2.8600
  • 25:$2.0800
  • 100:$1.7300
  • 250:$1.4300
  • 500:$1.3400
  • 1000:$1.2800
  • 2500:$1.2600
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Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di PSMN3R9-60PSQ è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,07 USD
2,07 USD
10
1,76 USD
17,60 USD
100
1,41 USD
141,00 USD
500
1,24 USD
620,00 USD
1000
1,03 USD
1 030,00 USD
2000
0,95 USD
1 900,00 USD
5000
0,92 USD
4 575,00 USD
10000
0,88 USD
8 800,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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