OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

FQA160N08

FQA160N08
Mfr. #:
FQA160N08
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 80V N-Channel QFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQA160N08 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-3PN-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
80 V
Id - Corrente di scarico continua:
160 A
Rds On - Resistenza Drain-Source:
7 mOhms
Vgs - Tensione Gate-Source:
25 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
375 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
QFET
Confezione:
Tubo
Altezza:
20.1 mm
Lunghezza:
16.2 mm
Serie:
FQA160N08
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
92 S
Tempo di caduta:
410 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
970 ns
Quantità confezione di fabbrica:
450
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
260 ns
Tempo di ritardo di accensione tipico:
85 ns
Parte # Alias:
FQA160N08_NL
Unità di peso:
0.183425 oz
Tags
FQA16, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 80 V, 160 A, 7 mΩ, TO-3P
***Yang
Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube
***ure Electronics
FQA Series 80 V 160 A 375 W Through Hole N-Channel QFet® Mosfet - TO-3PN
***r Electronics
Power Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
80V 160A 5.6m´Î@10V80A 375W 4V@250uA 530pF@25V N Channel 6.1nF@25V 225nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:170A; On Resistance, Rds(on):0.0056ohm; Package/Case:D2-PAK; Power Dissipation, Pd:375W; Drain Source On Resistance @ 10V:0.0056ohm ;RoHS Compliant: No
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***(Formerly Allied Electronics)
MOSFET, N Ch., 100V, 127A, 6 MOHM, 120 NC QG, TO-247AC, Pb-Free
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:134A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
***ow.cn
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
***ical
Trans MOSFET N-CH 100V 130A Automotive 3-Pin(3+Tab) TO-262 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET,N CH,100V,75A,TO262; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***ure Electronics
N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descrizione Azione Prezzo
FQA160N08
DISTI # 26637361		ON Semiconductor80V N-CHANNEL QFET10800
  • 2500:$2.9410
  • 1000:$3.0515
  • 500:$3.5020
  • 450:$3.8420
FQA160N08
DISTI # FQA160N08-ND		ON SemiconductorMOSFET N-CH 80V 160A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$4.9676
FQA160N08
DISTI # FQA160N08		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$3.0900
  • 900:$3.0900
  • 1800:$3.0900
  • 2700:$2.9900
  • 4500:$2.8900
FQA160N08
DISTI # FQA160N08		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450		Asia - 0
    FQA160N08
    DISTI # FQA160N08    		ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.6900
    • 10:€3.3900
    • 25:€3.1900
    • 50:€3.0900
    • 100:€2.9900
    • 500:€2.8900
    • 1000:€2.6900
    FQA160N08
    DISTI # 512-FQA160N08    		ON SemiconductorMOSFET 80V N-Channel QFET
    RoHS: Compliant    		345
    • 1:$6.3200
    • 10:$5.7200
    • 25:$5.4500
    • 100:$4.7300
    • 250:$4.5200
    • 500:$4.1200
    • 1000:$3.5900
    FQA160N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		21000
    • 1000:$5.6600
    • 500:$5.9600
    • 100:$6.2100
    • 25:$6.4700
    • 1:$6.9700
    FQA160N08
    DISTI # 6714900P    		ON SemiconductorMOSFET N-CHANNEL 80V 160A TO-3P(N), TU25
    • 25:£4.0100
    • 100:£3.6000
    • 250:£3.2900
    • 500:£3.0000
    Immagine Parte # Descrizione
    AD8606ARMZ-R7

    Mfr.#: AD8606ARMZ-R7

    OMO.#: OMO-AD8606ARMZ-R7

    		 Precision Amplifiers Prec Low Noise CMOS RRIO Dual
    5.0SMDJ36CA

    Mfr.#: 5.0SMDJ36CA

    OMO.#: OMO-5-0SMDJ36CA

    		 TVS Diodes / ESD Suppressors 36V 5KW 5% BI DO-214AB (SMC)
    ADM2582EBRWZ

    Mfr.#: ADM2582EBRWZ

    OMO.#: OMO-ADM2582EBRWZ

    		 Digital Isolators 2.5kV Sgnl & Pwr Iso Full/Hlf Duplx
    NST65010MW6T1G

    Mfr.#: NST65010MW6T1G

    OMO.#: OMO-NST65010MW6T1G

    		 Bipolar Transistors - BJT Dual Matched PNP Tra
    MMSTA42-7-F

    Mfr.#: MMSTA42-7-F

    OMO.#: OMO-MMSTA42-7-F

    		 Bipolar Transistors - BJT 300V 200mW
    MUN5237DW1T1G

    Mfr.#: MUN5237DW1T1G

    OMO.#: OMO-MUN5237DW1T1G

    		 Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
    BAS516,115

    Mfr.#: BAS516,115

    OMO.#: OMO-BAS516-115

    		 Diodes - General Purpose, Power, Switching SW 75V 250MA HS
    SISS26DN-T1-GE3

    Mfr.#: SISS26DN-T1-GE3

    OMO.#: OMO-SISS26DN-T1-GE3

    		 MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
    V20PWM10C-M3/I

    Mfr.#: V20PWM10C-M3/I

    OMO.#: OMO-V20PWM10C-M3-I

    		 Schottky Diodes & Rectifiers Dual Common Cathde TO-252AE 20A If(AV)
    BSC057N08NS3 G

    Mfr.#: BSC057N08NS3 G

    OMO.#: OMO-BSC057N08NS3-G

    		 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
    Disponibilità
    Azione:
    303
    Su ordine:
    2286
    Inserisci la quantità:
    Il prezzo attuale di FQA160N08 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    6,00 USD
    6,00 USD
    10
    5,09 USD
    50,90 USD
    100
    4,42 USD
    442,00 USD
    250
    4,19 USD
    1 047,50 USD
    500
    3,76 USD
    1 880,00 USD
    1000
    3,17 USD
    3 170,00 USD
    2500
    3,01 USD
    7 525,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
    Iniziare con
    Prodotti più recenti
    • Gate Drivers
      Gate Drivers
      The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
    • NCP137 700 mA LDO Regulators
      NCP137 700 mA LDO Regulators
      ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
    • NCP114 Low Dropout Regulators
      NCP114 Low Dropout Regulators
      ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
    • LC717A00AR Touch Sensor
      LC717A00AR Touch Sensor
      These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
    • Compare FQA160N08
      Compare FQA160N08
      FQA160N08 vs FQA160NOB vs FQA16N25C
    • FDMQ86530L Quad-MOSFET
      FDMQ86530L Quad-MOSFET
      ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
    More Newest Products
    Top