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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IRG7PH35UD1-EP DISTI # IRG7PH35UD1-EP-ND | Infineon Technologies AG | IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 350 Container: Tube | Limited Supply - Call | |
| IRG7PH35UD1-EP DISTI # 76R0795 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:-,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes | 82 |
|
| IRG7PH35UD1-EP | International Rectifier | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant | 951800 |
|
| IRG7PH35UD1-EP DISTI # 942-IRG7PH35UD1-EP | Infineon Technologies AG | IGBT Transistors IGBT DISCRETES RoHS: Compliant | 15 |
|
| IRG7PH35UD1-EP DISTI # 9074921P | Infineon Technologies AG | IGBT N-CHANNEL 1200V 50A TO-247AD, TU | 15 |
|
| IRG7PH35UD1-EP DISTI # 1822979 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant | 82 |
|
| IRG7PH35UD1-EP DISTI # 1822979 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant | 82 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IRG7PH30K10DPBF OMO.#: OMO-IRG7PH30K10DPBF |
IGBT Transistors 1200V 30A |
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Mfr.#: IRG7PH37K10DPBF |
IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT |
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Mfr.#: IRG7PH35UPBF |
IGBT Transistors 1200V 55A |
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Mfr.#: IRG7PH30K10PBF |
IGBT 1200V 33A 210W TO247AC |
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Mfr.#: IRG7PH35UDPBF |
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A |
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Mfr.#: IRG7PH35UD1PBF |
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A |
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Mfr.#: IRG7PH30K10D OMO.#: OMO-IRG7PH30K10D-1190 |
Nuovo e originale |
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Nuovo e originale | |
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Mfr.#: IRG7PH35UD1-EP,IRG7PH35U |
Nuovo e originale |
|
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Mfr.#: IRG7PH37K10DEPBF OMO.#: OMO-IRG7PH37K10DEPBF-1190 |
Nuovo e originale |
