STP11N60DM2

STP11N60DM2
Mfr. #:
STP11N60DM2
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STP11N60DM2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STP11N60DM2 maggiori informazioni STP11N60DM2 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
10 A
Rds On - Resistenza Drain-Source:
370 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
25 V
Qg - Carica cancello:
16.5 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
110 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
MDmesh
Serie:
STP11N60DM2
Tipo di transistor:
1 N-Channel
Marca:
STMicroelectronics
Tempo di caduta:
9.5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
6.3 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
31 ns
Tempo di ritardo di accensione tipico:
11.7 ns
Unità di peso:
0.067021 oz
Tags
STP11N6, STP11N, STP11, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package
***ical
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics SCT
Power MOSFETs, 600V, 10A, TO-220, Tube
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descrizione Azione Prezzo
STP11N60DM2
DISTI # V36:1790_16518913
STMicroelectronicsTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube385
  • 5000:$0.6643
  • 3000:$0.6905
  • 1000:$0.7491
  • 100:$1.0552
  • 25:$1.2852
  • 10:$1.3110
  • 1:$1.7007
STP11N60DM2
DISTI # V99:2348_17707871
STMicroelectronicsTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube385
  • 3000:$0.7048
  • 1000:$0.7491
  • 100:$1.0552
  • 25:$1.2852
  • 10:$1.3110
  • 1:$1.7007
STP11N60DM2
DISTI # 497-16932-ND
STMicroelectronicsN-CHANNEL 600 V, 0.26 OHM TYP.,
RoHS: Compliant
Min Qty: 1
Container: Tube
1487In Stock
  • 5000:$0.7235
  • 3000:$0.7513
  • 1000:$0.8069
  • 100:$1.1853
  • 25:$1.3912
  • 10:$1.4750
  • 1:$1.6400
STP11N60DM2
DISTI # 25954995
STMicroelectronicsTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube385
  • 10:$1.7007
STP11N60DM2
DISTI # 31678626
STMicroelectronicsTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube385
  • 10:$1.7007
STP11N60DM2
DISTI # STP11N60DM2
STMicroelectronicsSTMSTP11N60DM2 - Bulk (Alt: STP11N60DM2)
Min Qty: 1000
Container: Bulk
Americas - 0
  • 10000:$0.6759
  • 5000:$0.6909
  • 3000:$0.7229
  • 2000:$0.7569
  • 1000:$0.7939
STP11N60DM2
DISTI # STP11N60DM2
STMicroelectronicsSTMSTP11N60DM2 (Alt: STP11N60DM2)
RoHS: Compliant
Min Qty: 2000
Asia - 0
  • 100000:$0.5263
  • 50000:$0.5405
  • 20000:$0.5556
  • 10000:$0.5797
  • 6000:$0.6061
  • 4000:$0.6349
  • 2000:$0.6667
STP11N60DM2
DISTI # STP11N60DM2
STMicroelectronicsSTMSTP11N60DM2 (Alt: STP11N60DM2)
RoHS: Compliant
Min Qty: 50
Europe - 0
  • 500:€0.6689
  • 300:€0.7199
  • 200:€0.7799
  • 100:€0.8509
  • 50:€1.0399
STP11N60DM2
DISTI # 14AC7553
STMicroelectronicsMOSFET, N-CH, 600V, 10A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.37ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes86
  • 5000:$0.6970
  • 2500:$0.7230
  • 1000:$0.7770
  • 500:$0.9370
  • 100:$1.0700
  • 10:$1.3300
  • 1:$1.5800
STP11N60DM2
DISTI # 511-STP11N60DM2
STMicroelectronicsMOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
RoHS: Compliant
215
  • 1:$1.5600
  • 10:$1.3200
  • 100:$1.0600
  • 500:$0.9280
  • 1000:$0.7690
  • 2000:$0.7160
  • 5000:$0.6900
  • 10000:$0.6630
STP11N60DM2STMicroelectronicsPower Field-Effect Transistor
RoHS: Compliant
750
    STP11N60DM2
    DISTI # 2729679
    STMicroelectronicsMOSFET, N-CH, 600V, 10A, TO-220-331
    • 500:£0.7150
    • 250:£0.7660
    • 100:£0.8170
    • 10:£1.0600
    • 1:£1.3600
    STP11N60DM2
    DISTI # 2729679
    STMicroelectronicsMOSFET, N-CH, 600V, 10A, TO-220-3
    RoHS: Compliant
    37
    • 5000:$1.1200
    • 3000:$1.1400
    • 1000:$1.2200
    • 100:$1.7900
    • 25:$2.1000
    • 10:$2.2300
    • 1:$2.4700
    Immagine Parte # Descrizione
    TLV271CDR

    Mfr.#: TLV271CDR

    OMO.#: OMO-TLV271CDR

    Operational Amplifiers - Op Amps 550-uA/Ch 3-MHz Rail-to-Rail Out
    IR2110PBF

    Mfr.#: IR2110PBF

    OMO.#: OMO-IR2110PBF

    Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
    DS1250Y-70IND+

    Mfr.#: DS1250Y-70IND+

    OMO.#: OMO-DS1250Y-70IND-

    NVRAM 4096K NV SRAM
    1N4148

    Mfr.#: 1N4148

    OMO.#: OMO-1N4148

    Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
    STF11N60DM2

    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2

    MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
    BYC8-600P,127

    Mfr.#: BYC8-600P,127

    OMO.#: OMO-BYC8-600P-127

    Rectifiers Hyperfast power Diode
    TNY278PN

    Mfr.#: TNY278PN

    OMO.#: OMO-TNY278PN

    AC/DC Converters 21.5W 85-265 VAC 28W/230 VAC
    IR2110PBF

    Mfr.#: IR2110PBF

    OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES

    Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
    TLV271CDR

    Mfr.#: TLV271CDR

    OMO.#: OMO-TLV271CDR-TEXAS-INSTRUMENTS

    Operational Amplifiers - Op Amps 550-uA/Ch 3-MHz Rail-to-Rail Out
    STF11N60DM2

    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2-STMICROELECTRONICS

    N-CHANNEL 600 V, 0.26 OHM TYP.,
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di STP11N60DM2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,56 USD
    1,56 USD
    10
    1,32 USD
    13,20 USD
    100
    1,06 USD
    106,00 USD
    500
    0,93 USD
    464,00 USD
    1000
    0,77 USD
    769,00 USD
    2000
    0,72 USD
    1 432,00 USD
    5000
    0,69 USD
    3 450,00 USD
    10000
    0,66 USD
    6 630,00 USD
    Iniziare con
    Prodotti più recenti
    Top