IPZA60R060P7XKSA1

IPZA60R060P7XKSA1
Mfr. #:
IPZA60R060P7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPZA60R060P7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPZA60R060P7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
PG-TO-247-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
48 A
Rds On - Resistenza Drain-Source:
49 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
67 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
164 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Tipo di transistor:
MOSFET di potenza
Marca:
Tecnologie Infineon
Tempo di caduta:
4 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
240
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
79 ns
Tempo di ritardo di accensione tipico:
23 ns
Parte # Alias:
IPZA60R060P7 SP001707738
Tags
IPZA60R0, IPZA, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 60 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
***et
Trans MOSFET N-CH 650V 48A 4-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 600V 48A Tube
***ronik
N-CH 600V 48A 49mOhm TO247-4
***i-Key
MOSFET TO247-4
***ark
Mosfet, N-Ch, 600V, 48A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 48A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:164W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 48A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:48A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.049ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:164W; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descrizione Azione Prezzo
IPZA60R060P7XKSA1
DISTI # V99:2348_18786392
Infineon Technologies AG600V CoolMOS¿P7 Power Transistor0
    IPZA60R060P7XKSA1
    DISTI # IPZA60R060P7XKSA1-ND
    Infineon Technologies AGMOSFET TO247-4
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    163In Stock
    • 1200:$4.2746
    • 720:$4.9078
    • 240:$5.8578
    • 10:$7.1240
    • 1:$7.9200
    IPZA60R060P7XKSA1
    DISTI # SP001707738
    Infineon Technologies AGTrans MOSFET N-CH 650V 48A 4-Pin TO-247 Tube (Alt: SP001707738)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 240
    • 1:€4.2900
    • 10:€3.8900
    • 25:€3.7900
    • 50:€3.5900
    • 100:€3.4900
    • 500:€3.3900
    • 1000:€3.0900
    IPZA60R060P7XKSA1
    DISTI # IPZA60R060P7XKSA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 48A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R060P7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 240:$4.0900
    • 480:$3.8900
    • 960:$3.7900
    • 1440:$3.6900
    • 2400:$3.5900
    IPZA60R060P7XKSA1
    DISTI # 57AC6818
    Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes157
    • 500:$4.4600
    • 250:$4.8900
    • 100:$5.1200
    • 50:$5.5100
    • 25:$5.9000
    • 10:$6.1800
    • 1:$6.8400
    IPZA60R060P7XKSA1
    DISTI # 726-IPZA60R060P7XKSA
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    153
    • 1:$6.8400
    • 10:$6.1800
    • 25:$5.9000
    • 100:$5.1200
    • 250:$4.8900
    • 500:$4.4600
    IPZA60R060P7XKSA1
    DISTI # 2862299
    Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-247
    RoHS: Compliant
    157
    • 720:$7.2900
    • 240:$8.7000
    • 10:$10.5800
    • 1:$11.7600
    IPZA60R060P7XKSA1
    DISTI # XSKDRABS0006553
    Infineon Technologies AG 
    RoHS: Compliant
    180 in Stock0 on Order
    • 180:$5.3520
    • 150:$5.7360
    IPZA60R060P7XKSA1
    DISTI # 2862299
    Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-247
    RoHS: Compliant
    167
    • 100:£4.5700
    • 50:£5.0700
    • 10:£5.5600
    • 5:£6.1700
    • 1:£6.7300
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    Gate Drivers 4A/6A, 5KVrms Dual Isolated-channel Univ
    IPW60R031CFD7XKSA1

    Mfr.#: IPW60R031CFD7XKSA1

    OMO.#: OMO-IPW60R031CFD7XKSA1

    MOSFET HIGH POWER_NEW
    BAT54CHMFHT116

    Mfr.#: BAT54CHMFHT116

    OMO.#: OMO-BAT54CHMFHT116

    Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
    BAT54AHMFHT116

    Mfr.#: BAT54AHMFHT116

    OMO.#: OMO-BAT54AHMFHT116

    Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
    FCH023N65S3L4

    Mfr.#: FCH023N65S3L4

    OMO.#: OMO-FCH023N65S3L4

    MOSFET 650V N-Channel SuperFET III MOSFET
    EVAL45W19VFLYBP7TOBO1

    Mfr.#: EVAL45W19VFLYBP7TOBO1

    OMO.#: OMO-EVAL45W19VFLYBP7TOBO1

    Power Management IC Development Tools 45W adapter evaluation board
    380LX182M200A452

    Mfr.#: 380LX182M200A452

    OMO.#: OMO-380LX182M200A452-CORNELL-DUBILIER-ELECTRONICS

    Aluminum Electrolytic Capacitors - Snap In 1800uF 200V 20%
    SHT30-DIS-P2.5KS

    Mfr.#: SHT30-DIS-P2.5KS

    OMO.#: OMO-SHT30-DIS-P2-5KS-SENSIRION

    SENSOR HUMID/TEMP 5V I2C 3% SMD
    FCH023N65S3L4

    Mfr.#: FCH023N65S3L4

    OMO.#: OMO-FCH023N65S3L4-ON-SEMICONDUCTOR

    MOSFET N-CH 650V 75A TO247
    BAT54AHMFHT116

    Mfr.#: BAT54AHMFHT116

    OMO.#: OMO-BAT54AHMFHT116-ROHM-SEMI

    AUTOMOTIVE SCHOTTKY BARRIER DIOD
    Disponibilità
    Azione:
    106
    Su ordine:
    2089
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    Il prezzo attuale di IPZA60R060P7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
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    est. Prezzo
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    6,84 USD
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    5,90 USD
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    512,00 USD
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    4,89 USD
    1 222,50 USD
    500
    4,46 USD
    2 230,00 USD
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