IXTN550N055T2

IXTN550N055T2
Mfr. #:
IXTN550N055T2
Produttore:
Littelfuse
Descrizione:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTN550N055T2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTN550N055T2 DatasheetIXTN550N055T2 Datasheet (P4-P6)
ECAD Model:
Maggiori informazioni:
IXTN550N055T2 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-227B
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
940 W
Nome depositato:
HiPerFET
Confezione:
Tubo
Prodotto:
Driver del cancello MOSFET
Serie:
IXTN550N055
Marca:
IXYS
Tempo di caduta:
230 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
40 ns
Quantità confezione di fabbrica:
10
sottocategoria:
MOSFET
Unità di peso:
1.058219 oz
Tags
IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 55V 550A Automotive 4-Pin SOT-227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descrizione Azione Prezzo
IXTN550N055T2
DISTI # IXTN550N055T2-ND
IXYS CorporationMOSFET N-CH 55V 550A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
14In Stock
  • 100:$27.5821
  • 10:$32.2950
  • 1:$34.9100
IXTN550N055T2
DISTI # 747-IXTN550N055T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
33
  • 1:$36.5000
  • 5:$35.6800
  • 10:$33.7700
  • 25:$31.7400
  • 50:$29.3600
  • 100:$28.8300
  • 200:$24.6000
Immagine Parte # Descrizione
BZW50-33B

Mfr.#: BZW50-33B

OMO.#: OMO-BZW50-33B

TVS Diodes / ESD Suppressors 5000W 33V Bidirect
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Terminals WA-SMSR THR Shank M3 11mm
TAP800KR33E

Mfr.#: TAP800KR33E

OMO.#: OMO-TAP800KR33E

Planar Resistors - Chassis Mount 800Watt 0.33ohm 10% High Power
CXB1507-0000-000F0UG430G

Mfr.#: CXB1507-0000-000F0UG430G

OMO.#: OMO-CXB1507-0000-000F0UG430G

High Power LEDs - White White COB LED 840lm
CXA1512-0000-000N0UH430F

Mfr.#: CXA1512-0000-000N0UH430F

OMO.#: OMO-CXA1512-0000-000N0UH430F

High Power LEDs - White Warm White, 3000K 1099lm, 350mA, 90CRI
TAP800KR33E

Mfr.#: TAP800KR33E

OMO.#: OMO-TAP800KR33E-OHMITE

Planar Resistors - Chassis Mount 800Watt 0.33ohm 10%
CXA1512-0000-000N0UH430F

Mfr.#: CXA1512-0000-000N0UH430F

OMO.#: OMO-CXA1512-0000-000N0UH430F-CREE

High Power LEDs - White Warm White, 3000K 1099lm, 350mA, 90CRI
CXB1507-0000-000F0UG430G

Mfr.#: CXB1507-0000-000F0UG430G

OMO.#: OMO-CXB1507-0000-000F0UG430G-CREE

LED COB CXB1507 WARM WHT SQUARE
CXB1507-0000-000N0ZF2L7C

Mfr.#: CXB1507-0000-000N0ZF2L7C

OMO.#: OMO-CXB1507-0000-000N0ZF2L7C-CREE

LED COB CXB1507
BZW50-33B

Mfr.#: BZW50-33B

OMO.#: OMO-BZW50-33B-STMICROELECTRONICS

TVS DIODE 33V 76V R-6
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di IXTN550N055T2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
36,50 USD
36,50 USD
5
35,68 USD
178,40 USD
10
33,77 USD
337,70 USD
25
31,74 USD
793,50 USD
50
29,36 USD
1 468,00 USD
100
28,83 USD
2 883,00 USD
200
24,60 USD
4 920,00 USD
500
21,43 USD
10 715,00 USD
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