HGTG7N60A4D

Mfr. #:: HGTG7N60A4D
Produttore:: ON Semiconductor / Fairchild
Descrizione:: IGBT Transistors 600V N-Ch IGBT SMPS Series HF
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: HGTG7N60A4D Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: HGTG7N60A4D Datasheet HGTG7N60A4D Datasheet (P4-P6)HGTG7N60A4D Datasheet (P7-P9)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: Transistor IGBT

RoHS:: E

Tecnologia:: si

Pacchetto/custodia:: TO-247-3

Stile di montaggio:: Foro passante

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 600 V

Tensione di saturazione collettore-emettitore:: 1.9 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 34 A

Pd - Dissipazione di potenza:: 125 W

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Serie:: HGTG7N60A4D

Confezione:: Tubo

Corrente continua del collettore Ic Max:: 34 A

Altezza:: 20.82 mm

Lunghezza:: 15.87 mm

Larghezza:: 4.82 mm

Marca:: ON Semiconductor / Fairchild

Corrente continua del collettore:: 34 A

Corrente di dispersione gate-emettitore:: +/- 250 nA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 450

sottocategoria:: IGBT

Unità di peso:: 0.225401 oz

Tags: HGTG7N60A, HGTG7, HGTG, HGT

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG7N60A4D Descrizione

***ical: Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail

***ser: IGBTs 600V N-Ch IGBT SMPS Series HF

***pNet: Trans IGBT N-CH 600V 34A TO-247

***i-Key: IGBT N-CH SMPS 600V 34A TO247

***Semiconductor: 600V, SMPS IGBT

***ark: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case ;RoHS Compliant: Yes

***rchild Semiconductor: The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:56A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:45ns; Time, Fall Typ:45ns; Time, Rise:11ns; Transistors, No. of:1

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
HGTG7N60A4D DISTI # V36:1790_06359157	ON Semiconductor	PT P TO247 7A 600V SMPS	205	100:$1.8647 25:$1.9941 10:$2.2005 1:$2.7163
HGTG7N60A4D DISTI # HGTG7N60A4D-ND	ON Semiconductor	IGBT 600V 34A 125W TO247 RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call	450:$2.0895
HGTG7N60A4D DISTI # 30204001	ON Semiconductor	PT P TO247 7A 600V SMPS	205	6:$2.7163
HGTG7N60A4D DISTI # HGTG7N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG7N60A4D) RoHS: Not Compliant Min Qty: 179 Container: Bulk	Americas - 0	537:$1.6900 895:$1.6900 1790:$1.6900 179:$1.7900 358:$1.7900
HGTG7N60A4D DISTI # HGTG7N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG7N60A4D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	2700:$1.4900 4500:$1.4900 450:$1.5900 900:$1.5900 1800:$1.5900
HGTG7N60A4D DISTI # 58K1595	ON Semiconductor	SINGLE IGBT, 600V, 34A,DC Collector Current:34A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:125W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0	5000:$1.3000 2500:$1.3400 1000:$1.6600 500:$1.8400 100:$1.9900 10:$2.4800 1:$2.9200
HGTG7N60A4D DISTI # 512-HGTG7N60A4D	ON Semiconductor	IGBT Transistors 600V N-Ch IGBT SMPS Series HF RoHS: Compliant	0
HGTG7N60A4D_Q DISTI # 512-HGTG7N60A4D_Q	ON Semiconductor	Motor / Motion / Ignition Controllers & Drivers 600V N-Ch IGBT SMPS Series HF RoHS: Not compliant	0
HGTG7N60A4D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	52	1000:$1.8400 500:$1.9400 100:$2.0200 25:$2.1100 1:$2.2700
HGTG7N60A4D	Harris Semiconductor	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	269	1000:$1.8400 500:$1.9400 100:$2.0200 25:$2.1100 1:$2.2700

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: HGTG7N60A4 OMO.#: OMO-HGTG7N60A4	IGBT Transistors 600V N-Channel IGBT SMPS Series
	Mfr.#: HGTG7N60A4D OMO.#: OMO-HGTG7N60A4D	IGBT Transistors 600V N-Ch IGBT SMPS Series HF
	Mfr.#: HGTG7N60A4 OMO.#: OMO-HGTG7N60A4-ON-SEMICONDUCTOR	IGBT 600V 34A 125W TO247
	Mfr.#: HGTG7N60A4D OMO.#: OMO-HGTG7N60A4D-ON-SEMICONDUCTOR	IGBT 600V 34A 125W TO247
	Mfr.#: HGTG7N60A4D,G7N60A4D OMO.#: OMO-HGTG7N60A4D-G7N60A4D-1190	Nuovo e originale
	Mfr.#: HGTG7N60B3 OMO.#: OMO-HGTG7N60B3-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2000
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HGTG7N60A4D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes