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FCPF7N60YDTU

FCPF7N60YDTU
Mfr. #:
FCPF7N60YDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Channel SuperFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCPF7N60YDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
7 A
Rds On - Resistenza Drain-Source:
600 mOhms
Vgs th - Tensione di soglia gate-source:
5 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
30 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
31 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FCPF7N60
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
6 S
Tempo di caduta:
32 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
55 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
75 ns
Tempo di ritardo di accensione tipico:
35 ns
Unità di peso:
0.090478 oz
Tags
FCPF7, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Package / Case:TO-220F; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,6.8A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.46ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F
***ark
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
*** Stop Electro
Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***el Electronic
VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ure Electronics
SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-220 Full-Pak
***nell
MOSFET, N-CH, 600V, 7A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***icroelectronics
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
***et
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Parte # Mfg. Descrizione Azione Prezzo
FCPF7N60YDTU
DISTI # FCPF7N60YDTU-ND		ON SemiconductorMOSFET N-CH 600V 7A TO-220F
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.0428
FCPF7N60YDTU
DISTI # FCPF7N60YDTU		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF7N60YDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$0.7839
  • 1600:$0.7789
  • 3200:$0.7689
  • 4800:$0.7589
  • 8000:$0.7399
FCPF7N60YDTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3483
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCPF7N60YDTU
DISTI # 512-FCPF7N60YDTU		ON SemiconductorMOSFET 600V N-Channel SuperFET
RoHS: Compliant		147
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
FCPF7N60YDTU
DISTI # 8647938P		ON SemiconductorMOSFET N-CH 600V 7A SUPERFET TO220F, TU650
  • 25:£0.5340
Immagine Parte # Descrizione
MKS2B041001C00KSSD

Mfr.#: MKS2B041001C00KSSD

OMO.#: OMO-MKS2B041001C00KSSD-800

 Film Capacitors 1uF 50 Volts 10%
Disponibilità
Azione:
147
Su ordine:
2130
Inserisci la quantità:
Il prezzo attuale di FCPF7N60YDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,59 USD
1,59 USD
10
1,35 USD
13,50 USD
100
1,08 USD
108,00 USD
500
0,95 USD
475,50 USD
1000
0,79 USD
788,00 USD
2500
0,73 USD
1 832,50 USD
5000
0,71 USD
3 530,00 USD
10000
0,68 USD
6 790,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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