STGD6M65DF2

Mfr. #:: STGD6M65DF2
Produttore:: STMicroelectronics
Descrizione:: IGBT Transistors PTD HIGH VOLTAGE
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STGD6M65DF2 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: STGD6M65DF2 maggiori informazioni STGD6M65DF2 Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: Transistor IGBT

RoHS:: Y

Tecnologia:: si

Pacchetto/custodia:: DPAK-3

Stile di montaggio:: SMD/SMT

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 650 V

Tensione di saturazione collettore-emettitore:: 1.55 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 12 A

Pd - Dissipazione di potenza:: 88 W

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Serie:: STGD6M65DF2

Confezione:: Bobina

Corrente continua del collettore Ic Max:: 12 A

Marca:: STMicroelectronics

Corrente di dispersione gate-emettitore:: +/- 250 uA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 2500

sottocategoria:: IGBT

Tags: STGD6, STGD, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGD6M65DF2 Descrizione

***r Electronics: Insulated Gate Bipolar Transistor, 12A I(C), 650V V(BR)CES, N-Channel, TO-252

***icroelectronics: Trench gate field-stop IGBT, M series 650 V, 6 A low loss

***ical: Trans IGBT Chip N-CH 650V 12A 88000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: IGBT Trench Field Stop 650 V 12 A 88 W Surface Mount DPAK

*** Electronic Components: IGBT Transistors PTD HIGH VOLTAGE

STGD6M65DF2 Maggiori informazioni

STM 650V M Series Trench Gate Field-Stop IGBTs: STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STGD6M65DF2 DISTI # 497-16966-2-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.5406 2500:$0.5644
STGD6M65DF2 DISTI # 497-16966-1-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.6181 500:$0.7652 100:$0.9122 10:$1.1520 1:$1.2800
STGD6M65DF2 DISTI # 497-16966-6-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, M S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.6181 500:$0.7652 100:$0.9122 10:$1.1520 1:$1.2800
STGD6M65DF2 DISTI # STGD6M65DF2	STMicroelectronics	Trans IGBT Chip N 650V 12A 3-Pin DPAK T/R - Bulk (Alt: STGD6M65DF2) RoHS: Compliant Min Qty: 2500 Container: Bulk	Americas - 0	2500:$0.5089 5000:$0.4849 10000:$0.4629 15000:$0.4429 25000:$0.4339
STGD6M65DF2 DISTI # 511-STGD6M65DF2	STMicroelectronics	IGBT Transistors PTD HIGH VOLTAGE RoHS: Compliant	0	1:$1.1200 10:$0.9520 100:$0.7320 500:$0.6470 1000:$0.5100 2500:$0.4530
STGD6M65DF2 DISTI # IGBT2169	STMicroelectronics	IGBT650V6A1.9VDPAK RoHS: Compliant	Stock DE - 0Stock US - 0	2500:$0.6141 5000:$0.5763 7500:$0.5574

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: STGD6M65DF2 OMO.#: OMO-STGD6M65DF2	IGBT Transistors PTD HIGH VOLTAGE
	Mfr.#: STGD6NC60H-1 OMO.#: OMO-STGD6NC60H-1	IGBT Transistors N-channel 600 V, 7 A very fast IGBT
	Mfr.#: STGD6NC60HDT4 OMO.#: OMO-STGD6NC60HDT4	IGBT Transistors PowerMESH&#34 IGBT
	Mfr.#: STGD6NC60HDT4 OMO.#: OMO-STGD6NC60HDT4-STMICROELECTRONICS	IGBT 600V 15A 56W DPAK
	Mfr.#: STGD6NC60H-1 OMO.#: OMO-STGD6NC60H-1-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGD6NC60HDT4-CUT TAPE OMO.#: OMO-STGD6NC60HDT4-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: STGD6N60 OMO.#: OMO-STGD6N60-1190	Nuovo e originale
	Mfr.#: STGD6NC60HT4 OMO.#: OMO-STGD6NC60HT4-STMICROELECTRONICS	IGBT 600V 15A 56W DPAK
	Mfr.#: STGD6NC60H_07 OMO.#: OMO-STGD6NC60H-07-1190	Nuovo e originale
	Mfr.#: STGD6NC6HDT4 OMO.#: OMO-STGD6NC6HDT4-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 1985
Inserisci la quantità:

Il prezzo attuale di STGD6M65DF2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,11 USD~~; ~~1,11 USD~~

10: ~~0,95 USD~~; ~~9,52 USD~~

100: ~~0,73 USD~~; ~~73,20 USD~~

500: ~~0,65 USD~~; ~~323,50 USD~~

1000: ~~0,51 USD~~; ~~510,00 USD~~

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STGD6M65DF2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes