IXGA15N120B

Mfr. #:: IXGA15N120B
Produttore:: Littelfuse
Descrizione:: IGBT Transistors 30 Amps 1200V 3.2 Rds
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IXGA15N120B Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IXGA15N120B Datasheet
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: IXYS

Categoria di prodotto:: Transistor IGBT

RoHS:: Y

Tecnologia:: si

Pacchetto/custodia:: TO-263-3

Stile di montaggio:: SMD/SMT

Configurazione:: Separare

Tensione collettore-emettitore VCEO Max:: 1200 V

Tensione di saturazione collettore-emettitore:: 3.2 V

Tensione massima dell'emettitore di gate:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Serie:: IXGA15N120

Confezione:: Tubo

Corrente continua del collettore Ic Max:: 30 A

Altezza:: 4.83 mm

Lunghezza:: 10.29 mm

Larghezza:: 9.65 mm

Marca:: IXYS

Corrente continua del collettore:: 30 A

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 50

sottocategoria:: IGBT

Unità di peso:: 0.056438 oz

Tags: IXGA15N, IXGA15, IXGA1, IXGA, IXG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXGA15N120B Descrizione

*** Electronics: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-263AA

***i-Key: IGBT 1200V 30A 150W TO263AA

***el Nordic: Contact for details

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail

***ure Electronics: NPT Series N Channel 1200 V 35 A 298 W IGBT Transistor - TO263AB

***ark: TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB

***r Electronics: Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

***rchild Semiconductor: HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO263-3, RoHS

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

***ical: Trans IGBT Chip N-CH 1200V 11A 60000mW 3-Pin(2+Tab) D2PAK T/R

*** Electronic Components: IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT

***el Electronic: FIXED IND 2.9NH 450MA 250 MOHM

***ure Electronics: APT40GR120 Series 1200 V 88 A 210nC 500 W NPT Type IGBT - D3PAK

***p One Stop: Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(2+Tab) D3PAK

*** Stop Electro: Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel

***ical: Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF

***ineon SCT: Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS

***ment14 APAC: IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 15 A low loss

***ow.cn: Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-263AB

***i-Key: TRENCH GATE FIELD-STOP IGBT M SE

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IXGA15N120B DISTI # IXGA15N120B-ND	IXYS Corporation	IGBT 1200V 30A 150W TO263AA RoHS: Compliant Min Qty: 50 Container: Tube	Temporarily Out of Stock	50:$5.3156
IXGA15N120B DISTI # 747-IXGA15N120B	IXYS Corporation	IGBT Transistors 30 Amps 1200V 3.2 Rds RoHS: Compliant	0

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IXGA12N60CD1 OMO.#: OMO-IXGA12N60CD1	IGBT Transistors 24 Amps 600V 2.7 Rds
	Mfr.#: IXGA10N60 OMO.#: OMO-IXGA10N60-1190	Nuovo e originale
	Mfr.#: IXGA120N30PB OMO.#: OMO-IXGA120N30PB-1190	Nuovo e originale
	Mfr.#: IXGA15N120B2 OMO.#: OMO-IXGA15N120B2-1190	Nuovo e originale
	Mfr.#: IXGA16N60B2 OMO.#: OMO-IXGA16N60B2-IXYS-CORPORATION	IGBT 600V 40A 150W TO263
	Mfr.#: IXGA16N60B2D1 OMO.#: OMO-IXGA16N60B2D1-IXYS-CORPORATION	IGBT 600V 40A 150W TO263
	Mfr.#: IXGA16N60C2D1 OMO.#: OMO-IXGA16N60C2D1-IXYS-CORPORATION	IGBT 600V 40A 150W TO263
	Mfr.#: IXGA15N100C OMO.#: OMO-IXGA15N100C-IXYS-CORPORATION	IGBT Transistors 30 Amps 1000V 3.5 Rds
	Mfr.#: IXGA12N60CD1 OMO.#: OMO-IXGA12N60CD1-IXYS-CORPORATION	IGBT Transistors 24 Amps 600V 2.7 Rds
	Mfr.#: IXGA12N120A3 OMO.#: OMO-IXGA12N120A3-IXYS-CORPORATION	IGBT Transistors 1200V, 12A IGBT; G Series

Disponibilità

Azione:: Available
Su ordine:: 1500
Inserisci la quantità:

Il prezzo attuale di IXGA15N120B è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

50: ~~5,07 USD~~; ~~253,50 USD~~

100: ~~4,99 USD~~; ~~499,00 USD~~

250: ~~4,50 USD~~; ~~1 125,00 USD~~

500: ~~3,54 USD~~; ~~1 770,00 USD~~

1000: ~~3,31 USD~~; ~~3 310,00 USD~~

2500: ~~3,19 USD~~; ~~7 975,00 USD~~

Iniziare con

IXGA15N 3
IXGA15 4
IXGA1 26
IXGA 61
IXG 768

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IXGA15N120B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes