IDW30G120C5BFKSA1

Mfr. #:: IDW30G120C5BFKSA1
Produttore:: Infineon Technologies
Descrizione:: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IDW30G120C5BFKSA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Diodi, Raddrizzatori - Singoli

Prodotto: Diodi Schottky al carburo di silicio

Confezione: Tubo

Alias parziali: IDW30G120C5B SP001123716

Unità di peso: 1.340411 oz

Stile di montaggio: Foro passante

Pacchetto-Custodia: TO-247-3

Tecnologia: SiC

Configurazione: Catodo comune a doppio anodo

Pd-Power-Dissipazione: 332 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Vf-Forward-Voltage: 1.4 V

Vr-tensione inversa: 1.2 kV

Ir-corrente-inversa: 17 uA

Se-Forward-Current: 30 A

Vrrm-ripetitivo-tensione inversa: 1.2 kV

Ifsm-Forward-Surge-Current: 240 A

Tags: IDW30G1, IDW30G, IDW30, IDW3, IDW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IDW30G120C5BFKSA1 Descrizione

***ure Electronics: IDW30G120C5B Series 1200V 87 A 5th Generation ThinQ!SiC Schottky Diode-TO-247-3

***ark: Sic Schottky Diode, 1.2Kv, 87A, To-247; Product Range:thinq 5G 1200V Series; Diode Configuration:dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:87A; Total Capacitive Charge Qc:154Nc; Rohs Compliant: Yes

***ineon: With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IDW30G120C5BFKSA1 DISTI # V99:2348_06377184	Infineon Technologies AG	Diode Schottky 1.2KV 87A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	270	500:$13.8900 250:$14.4700 100:$15.2100 25:$16.8800 10:$17.7100 5:$18.9800 1:$19.3500
IDW30G120C5BFKSA1 DISTI # IDW30G120C5BFKSA1-ND	Infineon Technologies AG	DIODE GEN PURP 1200V 44A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	615In Stock	240:$17.2950 10:$20.2530 1:$21.9600
IDW30G120C5BFKSA1 DISTI # 27089105	Infineon Technologies AG	Diode Schottky 1.2KV 87A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	270	250:$14.4700 100:$15.2100 25:$16.8800 10:$17.7100 5:$18.9800 1:$19.3500
IDW30G120C5BFKSA1 DISTI # IDW30G120C5BFKSA1	Infineon Technologies AG	Diode Schottky 1.2KV 87A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW30G120C5BFKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$15.5900 480:$14.9900 960:$14.4900 1440:$13.9900 2400:$13.6900
IDW30G120C5BFKSA1 DISTI # SP001123716	Infineon Technologies AG	Diode Schottky 1.2KV 87A 3-Pin TO-247 Tube (Alt: SP001123716) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€16.6900 10:€15.2900 25:€14.6900 50:€14.0900 100:€13.5900 500:€13.0900 1000:€12.1900
IDW30G120C5BFKSA1 DISTI # IDW30G120C5B	Infineon Technologies AG	Diode Schottky 1.2KV 87A 3-Pin TO-247 Tube (Alt: IDW30G120C5B) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0	240:$15.4807 480:$14.8445 720:$14.6439 1200:$14.0734 2400:$13.8930 6000:$13.5456 12000:$13.2152
IDW30G120C5BFKSA1 DISTI # 34AC1591	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247,Product Range:thinQ 5G 1200V Series,Diode Configuration:Dual Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:87A,Total Capacitive Charge Qc:154nC,, RoHS Compliant: Yes	189	1:$20.9200 5:$20.7000 10:$19.2900 25:$18.4300 50:$17.4600 100:$16.4800 250:$15.7200
IDW30G120C5BFKSA1 DISTI # IDW30G120C5BFKSA1	Infineon Technologies AG	Diode: Schottky rectifying,SiC,THT,1.2kV,2x15A,332W,Ir:17uA	12	1:$35.6100 3:$30.6900 10:$24.6100
IDW30G120C5BFKSA1 DISTI # IDW30G120C5B	Infineon Technologies AG	SiC-Schottky 1200V 30A(2x15) TO247 RoHS: Compliant	30	1:€17.9000 25:€14.9000 100:€13.4000 200:€12.9000
IDW30G120C5BFKSA1 DISTI # 2780809	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247 RoHS: Compliant	252	1:£16.1400 5:£15.9700 10:£14.2300 50:£13.4800 100:£12.7200
IDW30G120C5BFKSA1 DISTI # 2780809	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 87A, TO-247 RoHS: Compliant	189	1:$27.6600 5:$27.1400 10:$25.6900 50:$24.8000 100:$23.9700 250:$23.5800
IDW30G120C5BFKSA1 DISTI # C1S322000567319	Infineon Technologies AG	Rectifier Diodes RoHS: Compliant	270	240:$15.7800 10:$18.0300 1:$19.3200

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: IDW30G120C5B

OMO.#: OMO-IDW30G120C5B-1190

SiC-D 1200V 30A 1,4V TO247-3

Mfr.#: IDW30G120C5B D3012B5

OMO.#: OMO-IDW30G120C5B-D3012B5-1190

Nuovo e originale

Mfr.#: IDW30G120C5BFKSA1

OMO.#: OMO-IDW30G120C5BFKSA1-INFINEON-TECHNOLOGIES

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di IDW30G120C5BFKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~14,68 USD~~; ~~14,68 USD~~

10: ~~13,95 USD~~; ~~139,51 USD~~

100: ~~13,22 USD~~; ~~1 321,65 USD~~

500: ~~12,48 USD~~; ~~6 241,15 USD~~

1000: ~~11,75 USD~~; ~~11 748,00 USD~~

Iniziare con

IDW30G1 3
IDW30G 6
IDW30 24
IDW3 27
IDW 126

Prodotti più recenti

M-SERIES D-Sub Connectors

The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
Compare IDW30G120C5BFKSA1

IDW30G120C5B vs IDW30G120C5BD3012B5 vs IDW30G120C5BFKSA1
TLV493D-A1B6 3D Magnetic Sensor

Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
IR25750 Current Sensing IC

IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
600 V Trench Ultra-Fast IGBTs

International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
DPS310 Digital Barometric Pressure Sensors

Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.

More Newest Products

IDW30G120C5BFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes