IPB80N03S4L02ATMA1

IPB80N03S4L02ATMA1
Mfr. #:
IPB80N03S4L02ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 30V 80A TO263-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB80N03S4L02ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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HTML Datasheet:
IPB80N03S4L02ATMA1 DatasheetIPB80N03S4L02ATMA1 Datasheet (P4-P6)IPB80N03S4L02ATMA1 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IPB80N03S4L0, IPB80N03S, IPB80N03, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 25, N-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80N03S4L02ATMA1
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R
***ronik
MOSFET 30V 2.4mOHM AECQ TO263
***i-Key
MOSFET N-CH 30V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
Parte # Mfg. Descrizione Azione Prezzo
IPB80N03S4L02ATMA1
DISTI # V36:1790_06384456
Infineon Technologies AGTrans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.6485
  • 500000:$0.6489
  • 100000:$0.6977
  • 10000:$0.7935
  • 1000:$0.8100
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$0.8476
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB80N03S4L02ATMA1)
RoHS: Compliant
Min Qty: 500
Container: Bulk
Americas - 0
  • 5000:$0.6349
  • 2500:$0.6459
  • 1500:$0.6689
  • 1000:$0.6939
  • 500:$0.7199
IPB80N03S4L02ATMA1
DISTI # IPB80N03S4L02ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N03S4L02ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.7069
  • 6000:$0.7199
  • 4000:$0.7449
  • 2000:$0.7729
  • 1000:$0.8019
IPB80N03S4L02ATMA1
DISTI # SP000273282
Infineon Technologies AGTrans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000273282)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€0.7069
  • 6000:€0.7539
  • 4000:€0.8289
  • 2000:€0.9269
  • 1000:€1.1889
IPB80N03S4L-02
DISTI # 726-IPB80N03S4L-02
Infineon Technologies AGMOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
RoHS: Compliant
994
  • 1:$1.5100
  • 10:$1.2800
  • 100:$1.0300
  • 500:$0.8940
  • 1000:$0.7410
IPB80N03S4L02ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
16735
  • 1000:$0.6600
  • 500:$0.6900
  • 100:$0.7200
  • 25:$0.7500
  • 1:$0.8100
IPB80N03S4L02ATMA1
DISTI # 8268954P
Infineon Technologies AGMOSFET N-CH 80A 30V OPTIMOS-T2 TO263, RL1150
  • 1250:£0.6300
  • 500:£0.6640
  • 125:£0.7650
Immagine Parte # Descrizione
IPB80N03S4L-02

Mfr.#: IPB80N03S4L-02

OMO.#: OMO-IPB80N03S4L-02

MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N03S4L-03

Mfr.#: IPB80N03S4L-03

OMO.#: OMO-IPB80N03S4L-03

MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N03S4L03ATMA1

Mfr.#: IPB80N03S4L03ATMA1

OMO.#: OMO-IPB80N03S4L03ATMA1

MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
IPB80N03S4L02ATMA1

Mfr.#: IPB80N03S4L02ATMA1

OMO.#: OMO-IPB80N03S4L02ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 80A TO263-3
IPB80N03S4L-03

Mfr.#: IPB80N03S4L-03

OMO.#: OMO-IPB80N03S4L-03-1190

Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: IPB80N03S4L-03)
IPB80N03S4L-03(1)

Mfr.#: IPB80N03S4L-03(1)

OMO.#: OMO-IPB80N03S4L-03-1--1190

Nuovo e originale
IPB80N03S4L03

Mfr.#: IPB80N03S4L03

OMO.#: OMO-IPB80N03S4L03-1190

Power Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB80N03S4L03ATMA1

Mfr.#: IPB80N03S4L03ATMA1

OMO.#: OMO-IPB80N03S4L03ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 80A TO263-3
IPB80N03S4L-02

Mfr.#: IPB80N03S4L-02

OMO.#: OMO-IPB80N03S4L-02-124

Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS-T2
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di IPB80N03S4L02ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,82 USD
0,82 USD
10
0,78 USD
7,84 USD
100
0,74 USD
74,25 USD
500
0,70 USD
350,65 USD
1000
0,66 USD
660,00 USD
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