BSM300GA170DLS

Mfr. #:: BSM300GA170DLS
Produttore:: Rochester Electronics, LLC
Descrizione:: Trans IGBT Module N-CH 1.7kV 300A nom - Bulk (Alt: BSM300GA170DLS)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSM300GA170DLS Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: BSM300GA170DL, BSM300GA17, BSM300GA1, BSM300GA, BSM300G, BSM300, BSM30, BSM3, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM300GA170DLS Descrizione

***et: Transistor IGBT Module N-CH 1700V 600A 20V Screw Mount

***S: new, original packaged

***omponent: Infineon power module

***el Nordic: Contact for details

***ical: Trans IGBT Module N-CH 1200V 600A 2100000mW 11-Pin ECONOD-3 Tray

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 9.4pF 100volts C0G +/-0.25pF

***ure Electronics: FF450R12ME3 Series 1200 V 600 A 2100 W Chassis Mount EconoDUAL IGBT Module

***et: Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray

***ical: Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ure Electronics: APTGT300x Series 600 V 430 A Trench + Field Stop IGBT Power Module - SP4

*** Stop Electro: Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 430A 10-Pin Case SP4

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP4 SP4 Tube RoHS Compliant: Yes

***i-Key: POWER MOD IGBT TRENCH PH LEG SP4

***ure Electronics: APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel

***ical: Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: POWER MOD IGBT TRENCH PH LEG SP6

***ure Electronics: APTGT600x Series 600 V 700 A Trench + Field Stop IGBT® Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MODULE IGBT 600V 600A SP6

***el Electronic: IGBT MODULE 600V 700A 2300W SP6

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSM300GA170DLS DISTI # BSM300GA170DLS	Infineon Technologies AG	Trans IGBT Module N-CH 1.7kV 300A nom - Bulk (Alt: BSM300GA170DLS) RoHS: Not Compliant Min Qty: 3 Container: Bulk	Americas - 0	30:$154.0900 15:$156.8900 9:$162.3900 6:$168.4900 3:$174.7900
BSM300GA170DLS DISTI # 641-BSM300GA170DLS	Infineon Technologies AG	IGBT Modules N-CH 1.7KV 600A	0
BSM300GA170DLS	Infineon Technologies AG	Trans IGBT Module N-CH 1.7KV 600A 5-Pin RoHS: Not Compliant	33	1000:$159.6300 500:$168.0300 100:$174.9400 25:$182.4400 1:$196.4700

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSM300GA120DN2 OMO.#: OMO-BSM300GA120DN2	IGBT Modules 1200V 300A SINGLE
	Mfr.#: BSM300GA120DLS OMO.#: OMO-BSM300GA120DLS-1190	Nuovo e originale
	Mfr.#: BSM300GA120DN11 OMO.#: OMO-BSM300GA120DN11-1190	Nuovo e originale
	Mfr.#: BSM300GA120DN2FS-E3256 OMO.#: OMO-BSM300GA120DN2FS-E3256-1190	Nuovo e originale
	Mfr.#: BSM300GA170DN2E3166 OMO.#: OMO-BSM300GA170DN2E3166-1190	Nuovo e originale
	Mfr.#: BSM300GA170DN2SE3256 OMO.#: OMO-BSM300GA170DN2SE3256-1190	Nuovo e originale
	Mfr.#: BSM300GA170DN2SFE3226 OMO.#: OMO-BSM300GA170DN2SFE3226-1190	Nuovo e originale
	Mfr.#: BSM300GAL120DLC OMO.#: OMO-BSM300GAL120DLC-1190	IGBT Modules 1200V 300A CHOPPER
	Mfr.#: BSM300GB120DLCHOSA1 OMO.#: OMO-BSM300GB120DLCHOSA1-INFINEON-TECHNOLOGIES	IGBT 2 MED POWER 62MM-1
	Mfr.#: BSM300GB120DLC OMO.#: OMO-BSM300GB120DLC-125	IGBT Modules 1200V 300A DUAL

Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di BSM300GA170DLS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~231,14 USD~~; ~~231,14 USD~~

10: ~~219,58 USD~~; ~~2 195,78 USD~~

100: ~~208,02 USD~~; ~~20 802,15 USD~~

500: ~~196,46 USD~~; ~~98 232,40 USD~~

1000: ~~184,91 USD~~; ~~184 908,00 USD~~

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BSM300GA170DLS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes