SI7904BDN-T1-GE3

SI7904BDN-T1-GE3
Mfr. #:
SI7904BDN-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET 2N-CH 20V 6A PPAK 1212-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7904BDN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Array
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SI7904BDN-GE3
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR 1212-8 Dual
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR 1212-8 Dual
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
17.8W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
860pF @ 10V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
6A
Rds-On-Max-Id-Vgs
30 mOhm @ 7.1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Carica-Qg-Vgs
24nC @ 8V
Pd-Power-Dissipazione
2.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6 ns 5 ns
Ora di alzarsi
60 ns 15 ns
Vgs-Gate-Source-Voltage
8 V
Id-Continuo-Scarico-Corrente
6 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1 V
Rds-On-Drain-Source-Resistenza
30 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
25 ns
Tempo di ritardo all'accensione tipico
7 ns 5 ns
Qg-Gate-Carica
16 nC
Modalità canale
Aumento
Tags
SI7904BDN-T1, SI7904BDN-T, SI7904BD, SI7904B, SI7904, SI790, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
SI7904BDN-T1-GE3
DISTI # V72:2272_09216406
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1956
  • 1000:$0.5007
  • 500:$0.6100
  • 250:$0.6307
  • 100:$0.7008
  • 25:$0.8682
  • 10:$0.8844
  • 1:$1.0185
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8726In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8726In Stock
  • 1000:$0.5420
  • 500:$0.6865
  • 100:$0.8852
  • 10:$1.1200
  • 1:$1.2600
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 3000:$0.4911
SI7904BDN-T1-GE3
DISTI # 29000010
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1956
  • 1000:$0.5007
  • 500:$0.6100
  • 250:$0.6307
  • 100:$0.7008
  • 25:$0.8682
  • 14:$0.8844
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7904BDN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 3000
  • 3000:$0.5679
  • 6000:$0.5509
  • 12000:$0.5289
  • 18000:$0.5139
  • 30000:$0.5009
SI7904BDN-T1-GE3
DISTI # SI7904BDN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R (Alt: SI7904BDN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI7904BDN-T1-GE3
    DISTI # 33P5445
    Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 6A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):45mohm,Rds(on) Test Voltage Vgs:1.8V,Threshold Voltage Vgs:1V,Product Range:- , RoHS Compliant: Yes0
    • 1:$0.5600
    • 3000:$0.5560
    • 6000:$0.5290
    • 12000:$0.4690
    SI7904BDN-T1-GE3
    DISTI # 26R1941
    Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 6A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):45mohm,Rds(on) Test Voltage Vgs:1.8V,Threshold Voltage Vgs:1V,Product Range:- , RoHS Compliant: Yes0
    • 1:$1.3100
    • 25:$1.0800
    • 50:$0.9520
    • 100:$0.8230
    • 250:$0.7660
    • 500:$0.7080
    • 1000:$0.5590
    SI7904BDN-T1-GE3
    DISTI # 70617005
    Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
    RoHS: Compliant
    0
    • 300:$0.5970
    • 600:$0.5850
    • 1500:$0.5670
    SI7904BDN-T1-GE3
    DISTI # 781-SI7904BDN-T1-GE3
    Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs PowerPAK 1212-8
    RoHS: Compliant
    1236
    • 1:$1.3100
    • 10:$1.0800
    • 100:$0.8230
    • 500:$0.7080
    • 1000:$0.5590
    • 3000:$0.5220
    SI7904BDN-T1-GE3
    DISTI # 8181419P
    Vishay IntertechnologiesTRANS MOSFET N-CH 20V 6AN, RL80
    • 50:£0.5600
    • 200:£0.4940
    • 500:£0.4540
    SI7904BDN-T1-GE3
    DISTI # C1S803601026024
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant
    1956
    • 250:$0.6307
    • 100:$0.7008
    • 25:$0.8682
    • 10:$0.8844
    SI7904BDN-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs PowerPAK 1212-8
    RoHS: Compliant
    Americas -
      SI7904BDN-T1-GE3
      DISTI # 1871388
      Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 20V, 6A
      RoHS: Compliant
      0
      • 3000:£0.4920
      Immagine Parte # Descrizione
      SI7904BDN-T1-GE3

      Mfr.#: SI7904BDN-T1-GE3

      OMO.#: OMO-SI7904BDN-T1-GE3

      MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
      SI7904BDN-T1-E3-CUT TAPE

      Mfr.#: SI7904BDN-T1-E3-CUT TAPE

      OMO.#: OMO-SI7904BDN-T1-E3-CUT-TAPE-1190

      Nuovo e originale
      SI7904BDN-T1-E3

      Mfr.#: SI7904BDN-T1-E3

      OMO.#: OMO-SI7904BDN-T1-E3-VISHAY

      MOSFET 2N-CH 20V 6A 1212-8
      SI7904BDN-T1-GE3

      Mfr.#: SI7904BDN-T1-GE3

      OMO.#: OMO-SI7904BDN-T1-GE3-VISHAY

      MOSFET 2N-CH 20V 6A PPAK 1212-8
      SI7904BDN-TI

      Mfr.#: SI7904BDN-TI

      OMO.#: OMO-SI7904BDN-TI-1190

      Nuovo e originale
      SI7904BDNT1E3

      Mfr.#: SI7904BDNT1E3

      OMO.#: OMO-SI7904BDNT1E3-1190

      Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      Disponibilità
      Azione:
      Available
      Su ordine:
      1500
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      Prezzo di riferimento (USD)
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      Prezzo unitario
      est. Prezzo
      1
      0,70 USD
      0,70 USD
      10
      0,67 USD
      6,70 USD
      100
      0,63 USD
      63,45 USD
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      0,60 USD
      299,65 USD
      1000
      0,56 USD
      564,00 USD
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