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FDS89141

FDS89141
Mfr. #:
FDS89141
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 100V Dual N-Channel PowerTrench MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDS89141 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDS89141 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
3.5 A
Rds On - Resistenza Drain-Source:
62 mOhms
Qg - Carica cancello:
5.1 nC
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
31 W
Configurazione:
Dual
Nome depositato:
PowerTrench
Confezione:
Bobina
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Serie:
FDS89141
Tipo di transistor:
2 N-Channel
Larghezza:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
14.7 S
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Unità di peso:
0.006596 oz
Tags
FDS891, FDS89, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Dual N-Channel PowerTrench® MOSFET 100V, 3.5A, 62mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, NN CH, 100V, 3.5A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Parte # Mfg. Descrizione Azione Prezzo
FDS89141
DISTI # FDS89141CT-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12929In Stock
  • 1000:$0.7818
  • 500:$0.9902
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDS89141
DISTI # FDS89141DKR-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12929In Stock
  • 1000:$0.7818
  • 500:$0.9902
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDS89141
DISTI # FDS89141TR-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 2500:$0.7084
FDS89141
DISTI # FDS89141		ON SemiconductorTrans MOSFET N-CH 100V 3.5A 8-Pin SO T/R (Alt: FDS89141)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    FDS89141
    DISTI # FDS89141    		ON SemiconductorTrans MOSFET N-CH 100V 3.5A 8-Pin SO T/R - Tape and Reel (Alt: FDS89141)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6009
    • 5000:$0.5969
    • 10000:$0.5889
    • 15000:$0.5819
    • 25000:$0.5669
    FDS89141
    DISTI # 88T3365    		ON SemiconductorMOSFET, NN CHANNEL, 100V, 3.5A, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V RoHS Compliant: Yes0
    • 1:$1.5100
    • 10:$1.2900
    • 25:$1.1900
    • 50:$1.0900
    • 100:$0.9900
    • 250:$0.9330
    • 500:$0.8750
    • 1000:$0.6900
    FDS89141
    DISTI # 27T6448    		ON SemiconductorFET 100V 62.0 MOHM SO8 / REEL0
    • 1:$0.6290
    • 2500:$0.6210
    • 5000:$0.6140
    • 10000:$0.6060
    FDS89141.
    DISTI # 27AC5725    		Fairchild Semiconductor CorporationFET 100V 62.0 MOHM SO8 ROHS COMPLIANT: YES0
    • 1:$0.6290
    • 2500:$0.6210
    • 5000:$0.6140
    • 10000:$0.6060
    FDS89141
    DISTI # 512-FDS89141    		ON SemiconductorMOSFET 100V Dual N-Channel PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$1.5100
    • 10:$1.2900
    • 100:$0.9900
    • 500:$0.8750
    • 1000:$0.6900
    FDS89141
    DISTI # 2083349    		ON SemiconductorMOSFET, NN CH, 100V, 3.5A, 8SOIC
    RoHS: Compliant    		240
    • 5:£1.0800
    • 25:£0.9800
    • 100:£0.7510
    • 250:£0.7070
    • 500:£0.6630
    FDS89141
    DISTI # 2083349    		ON SemiconductorMOSFET, NN CH, 100V, 3.5A, 8SOIC
    RoHS: Compliant    		0
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.5700
    • 500:$1.3900
    • 1000:$1.1000
    • 2500:$0.9690
    • 10000:$0.9330
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    		 D-Sub Standard Connectors DB25 MET SHELL .318
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    Disponibilità
    Azione:
    27
    Su ordine:
    2010
    Inserisci la quantità:
    Il prezzo attuale di FDS89141 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,51 USD
    1,51 USD
    10
    1,29 USD
    12,90 USD
    100
    0,99 USD
    99,00 USD
    500
    0,88 USD
    437,50 USD
    1000
    0,69 USD
    690,00 USD
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