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NE651R479A-T1-A

NE651R479A-T1-A
Mfr. #:
NE651R479A-T1-A
Produttore:
CEL
Descrizione:
RF JFET Transistors L&S Band GaAs HJFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NE651R479A-T1-A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
CEL
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tipo di transistor:
HFET
Tecnologia:
GaAs
Guadagno:
12 dB
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
8 V
Vgs - Tensione di rottura gate-source:
- 4 V
Id - Corrente di scarico continua:
1 A
Potenza di uscita:
30 dBm
Temperatura massima di esercizio:
+ 125 C
Pd - Dissipazione di potenza:
2.5 W
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
79A
Confezione:
Bobina
Frequenza operativa:
1.9 GHz
Prodotto:
RF JFET
Tipo:
GaAs HFET
Marca:
CEL
P1dB - Punto di compressione:
27 dBm
Tipologia di prodotto:
Transistor RF JFET
Quantità confezione di fabbrica:
1000
sottocategoria:
transistor
Tags
NE651R479A-T, NE651R, NE651, NE65, NE6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Discrete Power Devices L&S; Band GaAs HJFET
***et
Trans JFET N-CH 8V 1000mA 4-Pin Case 79A T/R
***i-Key
HJ-FET GAAS 1.9GHZ 1W 79A
Parte # Mfg. Descrizione Azione Prezzo
NE651R479A-T1-A
DISTI # NE651R479A-T1-A-ND		California Eastern Laboratories (CEL)FET RF 8V 1.9GHZ 79A
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    NE651R479A-T1-A
    DISTI # 551-NE651R479A-T1A    		California Eastern Laboratories (CEL)RF JFET Transistors L&S Band GaAs HJFET
    RoHS: Compliant    		0
      NE651R479A-T1-ARenesas Electronics CorporationTransistor
      RoHS: Compliant      		4875
      • 1000:$5.6600
      • 500:$5.9600
      • 100:$6.2100
      • 25:$6.4700
      • 1:$6.9700
      Immagine Parte # Descrizione
      NE651R479A-EVPW24

      Mfr.#: NE651R479A-EVPW24

      OMO.#: OMO-NE651R479A-EVPW24

      		 RF Development Tools For NE651R479A-A Power at 2.4 GHz
      NE651R479A-EVPW35

      Mfr.#: NE651R479A-EVPW35

      OMO.#: OMO-NE651R479A-EVPW35

      		 RF Development Tools For NE651R479A-A Power at 3.5 GHz
      NE651R479A-T1-A

      Mfr.#: NE651R479A-T1-A

      OMO.#: OMO-NE651R479A-T1-A

      		 RF JFET Transistors L&S Band GaAs HJFET
      NE651R479A-EVPW19

      Mfr.#: NE651R479A-EVPW19

      OMO.#: OMO-NE651R479A-EVPW19

      		 RF Development Tools For NE651R479A-A Power at 1.9 GHz
      NE651R479A

      Mfr.#: NE651R479A

      OMO.#: OMO-NE651R479A-1152

      		 RF JFET Transistors L&S Band GaAs HJFET
      NE651R479A-T1

      Mfr.#: NE651R479A-T1

      OMO.#: OMO-NE651R479A-T1-1190

      		 Nuovo e originale
      NE651R479A-T1(NE651R479

      Mfr.#: NE651R479A-T1(NE651R479

      OMO.#: OMO-NE651R479A-T1-NE651R479-1190

      		 Nuovo e originale
      NE651R479A-T1-A

      Mfr.#: NE651R479A-T1-A

      OMO.#: OMO-NE651R479A-T1-A-CEL

      		 FET RF 8V 1.9GHZ 79A
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di NE651R479A-T1-A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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