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IXGH30N120BD1

IXGH30N120BD1
Mfr. #:
IXGH30N120BD1
Produttore:
IXYS
Descrizione:
MOSFET 50 Amps 1200V 3.5 V Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXGH30N120BD1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
IGBT - Singolo
Serie
IXGH30N120
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247AD (IXGH)
Potenza-Max
-
Reverse-Tempo di ripristino-trr
-
Corrente-Collettore-Ic-Max
50A
Tensione-Collettore-Emettitore-Ripartizione-Max
1200V
Tipo IGBT
-
Corrente-Collettore-Impulsato-Icm
-
Vce-su-Max-Vge-Ic
-
Energia di commutazione
-
Gate-Charge
-
Td-on-off-25°C
-
Condizione di test
-
Id-Continuo-Scarico-Corrente
50 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Tags
IXGH30N12, IXGH30N1, IXGH30, IXGH3, IXGH, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V 50A TO247
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***icroelectronics
Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P
Parte # Mfg. Descrizione Azione Prezzo
IXGH30N120BD1
DISTI # IXGH30N120BD1-ND		IXYS CorporationIGBT 1200V 50A TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$10.7193
IXGH30N120BD1
DISTI # 747-IXGH30N120BD1		IXYS CorporationMOSFET 50 Amps 1200V 3.5 V Rds
RoHS: Compliant		0
    Immagine Parte # Descrizione
    IXGH30N120H

    Mfr.#: IXGH30N120H

    OMO.#: OMO-IXGH30N120H-1190

    		 Nuovo e originale
    IXGH30N140A3

    Mfr.#: IXGH30N140A3

    OMO.#: OMO-IXGH30N140A3-1190

    		 Nuovo e originale
    IXGH30N60AU1

    Mfr.#: IXGH30N60AU1

    OMO.#: OMO-IXGH30N60AU1-1190

    		 Nuovo e originale
    IXGH30N60BD1

    Mfr.#: IXGH30N60BD1

    OMO.#: OMO-IXGH30N60BD1-IXYS-CORPORATION

    		 IGBT 600V 60A 200W TO247
    IXGH30N60BU1

    Mfr.#: IXGH30N60BU1

    OMO.#: OMO-IXGH30N60BU1-IXYS-CORPORATION

    		 IGBT 600V 60A 200W TO247AD
    IXGH30N60C2

    Mfr.#: IXGH30N60C2

    OMO.#: OMO-IXGH30N60C2-IXYS-CORPORATION

    		 IGBT 600V 70A 190W TO247
    IXGH30N60CD1

    Mfr.#: IXGH30N60CD1

    OMO.#: OMO-IXGH30N60CD1-1190

    		 Nuovo e originale
    IXGH30N60U1

    Mfr.#: IXGH30N60U1

    OMO.#: OMO-IXGH30N60U1-1190

    		 MOSFET 30 Amps 600V
    IXGH30N60C3

    Mfr.#: IXGH30N60C3

    OMO.#: OMO-IXGH30N60C3-IXYS-CORPORATION

    		 IGBT Modules 30 Amps 600V
    IXGH30N60C3D1

    Mfr.#: IXGH30N60C3D1

    OMO.#: OMO-IXGH30N60C3D1-IXYS-CORPORATION

    		 IGBT Modules High Frequency Range 40khz C-IGBT w/Diode
    Disponibilità
    Azione:
    Available
    Su ordine:
    1500
    Inserisci la quantità:
    Il prezzo attuale di IXGH30N120BD1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    16,08 USD
    16,08 USD
    10
    15,28 USD
    152,75 USD
    100
    14,47 USD
    1 447,11 USD
    500
    13,67 USD
    6 833,55 USD
    1000
    12,86 USD
    12 863,20 USD
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