FFSH40120ADN-F155

FFSH40120ADN-F155
Mfr. #:
FFSH40120ADN-F155
Produttore:
ON Semiconductor / Fairchild
Descrizione:
Schottky Diodes & Rectifiers 1200V SiC SBD 40A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FFSH40120ADN-F155 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FFSH40120ADN-F155 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-247-3
Se - Corrente diretta:
40 A
Vrrm - Tensione inversa ripetitiva:
1.2 kV
Vf - Tensione diretta:
1.45 V
Ifsm - Corrente diretta in avanti:
135 A
Configurazione:
Dual
Tecnologia:
SiC
Ir - Corrente inversa:
200 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FFSH40120ADN
Confezione:
Tubo
Marca:
ON Semiconductor / Fairchild
Pd - Dissipazione di potenza:
220 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
450
sottocategoria:
Diodi e raddrizzatori
trr - Tempo di recupero inverso:
-
Vr - Tensione inversa:
1.2 kV
Parte # Alias:
FFSH40120ADN_F155
Unità di peso:
0.225401 oz
Tags
FFSH40120ADN-F, FFSH40120AD, FFSH401, FFSH4, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
SiC Diode, 1200V, 40A, TO-247-3, Common Cathode
***ical
Diode Schottky 1.2KV 20A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
DIODE ARRAY SCHOTTKY 1200V TO247
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semicon-ductor material - Silicon Carbide, enables higher operating fre-quency, and helps increasing power density and reduction ofsystem size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Parte # Mfg. Descrizione Azione Prezzo
FFSH40120ADN-F155
DISTI # V79:2366_23246360
ON Semiconductor1200V SIC SBD 40A195
  • 25:$20.5799
  • 1:$22.4800
FFSH40120ADN-F155
DISTI # V99:2348_14701466
ON Semiconductor1200V SIC SBD 40A195
  • 25:$22.1000
  • 1:$24.1400
FFSH40120ADN-F155
DISTI # FFSH40120ADN-F155-ND
ON SemiconductorDIODE ARRAY SCHOTTKY 1200V TO247
RoHS: Compliant
Min Qty: 450
Container: Bulk
Temporarily Out of Stock
  • 450:$15.1574
FFSH40120ADN-F155
DISTI # 26994653
ON Semiconductor1200V SIC SBD 40A900
  • 450:$24.1400
FFSH40120ADN-F155
DISTI # 25943833
ON Semiconductor1200V SIC SBD 40A195
  • 1:$24.1400
FFSH40120ADN-F155
DISTI # 32380038
ON Semiconductor1200V SIC SBD 40A195
  • 1:$22.4800
FFSH40120ADN_F155
DISTI # FFSH40120ADN-F155
ON Semiconductor1200V SiC SBD 40A - Bulk (Alt: FFSH40120ADN-F155)
Min Qty: 22
Container: Bulk
Americas - 0
  • 220:$14.2900
  • 110:$14.5900
  • 66:$14.7900
  • 44:$14.9900
  • 22:$15.0900
FFSH40120ADN_F155
DISTI # FFSH40120ADN-F155
ON Semiconductor1200V SiC SBD 40A - Rail/Tube (Alt: FFSH40120ADN-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$12.8900
  • 2700:$13.1900
  • 1800:$13.3900
  • 900:$13.4900
  • 450:$13.5900
FFSH40120ADN_F155
DISTI # FFSH40120ADN_F155
ON Semiconductor1200V SiC SBD 40A - Rail/Tube (Alt: FFSH40120ADN_F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
    FFSH40120ADN_F155
    DISTI # FFSH40120ADN-F155
    ON Semiconductor1200V SiC SBD 40A (Alt: FFSH40120ADN-F155)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€12.2900
    • 500:€13.1900
    • 100:€13.6900
    • 50:€14.1900
    • 25:€14.7900
    • 10:€15.3900
    • 1:€16.7900
    FFSH40120ADN-F155
    DISTI # 48AC1064
    ON SemiconductorSIC TO247 SBD 40A 1200V / TUBE0
    • 250:$18.9300
    • 100:$19.5500
    • 50:$20.1800
    • 25:$21.6500
    • 1:$23.5200
    FFSH40120ADN-F155
    DISTI # 512-FFSH40120ADNF155
    ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 40A
    RoHS: Compliant
    185
    • 1:$19.6200
    • 5:$19.4100
    • 10:$18.1000
    • 25:$17.2800
    • 100:$15.4500
    • 250:$14.7400
    FFSH40120ADN-F155Fairchild Semiconductor Corporation 
    RoHS: Not Compliant
    367
    • 1000:$15.2800
    • 500:$16.0800
    • 100:$16.7400
    • 25:$17.4600
    • 1:$18.8000
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    OMO.#: OMO-5KP250CA-LITTELFUSE

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    STD4NK100Z

    Mfr.#: STD4NK100Z

    OMO.#: OMO-STD4NK100Z-STMICROELECTRONICS

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    STFW3N150

    Mfr.#: STFW3N150

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    593202B03500G

    Mfr.#: 593202B03500G

    OMO.#: OMO-593202B03500G-AAVID-THERMALLOY

    Heat Sink Passive TO-220 Twisted Thru-Hole 10.4C/W Black Anodized
    940C30S33K-F

    Mfr.#: 940C30S33K-F

    OMO.#: OMO-940C30S33K-F-CORNELL-DUBILIER-ELECTRONICS

    Film Capacitors 3000V .033uF 10%
    B32676G1106K000

    Mfr.#: B32676G1106K000

    OMO.#: OMO-B32676G1106K000-EPCOS

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    UCC21520AQDWRQ1

    Mfr.#: UCC21520AQDWRQ1

    OMO.#: OMO-UCC21520AQDWRQ1-TEXAS-INSTRUMENTS

    Isolated Dual-Channel Gate Driver for Automotive
    Disponibilità
    Azione:
    175
    Su ordine:
    2158
    Inserisci la quantità:
    Il prezzo attuale di FFSH40120ADN-F155 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    19,62 USD
    19,62 USD
    5
    19,41 USD
    97,05 USD
    10
    18,10 USD
    181,00 USD
    25
    17,28 USD
    432,00 USD
    100
    15,45 USD
    1 545,00 USD
    250
    14,74 USD
    3 685,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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